IXYS IXTH200N085T Trenchmv power mosfet Datasheet

Preliminary Technical Information
IXTH200N085T
IXTQ200N085T
TrenchMVTM
Power MOSFET
VDSS
ID25
RDS(on)
= 85
V
= 200
A
≤ 5.0 m Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
VGSM
85
85
V
V
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
200
75
540
A
A
A
IAR
E AS
TC = 25° C
TC = 25° C
25
1.0
A
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤175° C, RG = 5 Ω
3
V/ns
PD
TC = 25° C
480
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Md
Mounting torque
Weight
TO-3P
TO-247
1.13 / 10 Nm/lb.in.
5.5
6
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
85
VGS(th)
VDS = VGS, ID = 250 µA
2.0
IGSS
VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
V
TJ = 150° C
© 2006 IXYS CORPORATION All rights reserved
G
D
(TAB)
S
TO-3P (IXTQ)
TJ
TJM
Tstg
TL
TSOLD
TO-247 (IXTH)
4.0
4.0
V
± 200
nA
5
250
µA
µA
5.0
mΩ
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
DS99703 (11/06)
IXTH200N085T
IXTQ200N085T
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
Typ.
72
125
S
7600
pF
Ciss
Coss
TO-247AD Outline
Min.
VGS = 0 V, VDS = 25 V, f = 1 MHz
Max.
1040
pF
200
pF
32
ns
Crss
td(on)
Resistive Switching Times
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
80
ns
td(off)
RG = 5 Ω (External)
65
ns
64
ns
152
nC
37
nC
42
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
1
RthCS
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
Min.
Characteristic Values
Typ.
Max.
IS
VGS = 0 V
200
A
ISM
Pulse width limited by TJM
540
A
VSD
IF = 25 A, VGS = 0 V, Note 1
1.0
V
t rr
IF = 25 A, -di/dt = 100 A/µs
90
ns
2 - Drain
Tab - Drain
Dim.
°C/W
0.25
3
Terminals: 1 - Gate
3 - Source
0.31 °C/W
RthJC
2
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins:
PRELIMINARY TECHNICAL INFORMATION
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
IXTA200N085T
IXTP200N085T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
200
300
VGS = 10V
8V
7V
180
160
240
140
210
I D - Amperes
I D - Amperes
VGS = 10V
8V
7V
270
120
6V
100
80
60
180
6V
150
120
90
5V
40
60
20
5V
30
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
1
2
5
6
2.6
200
VGS = 10V
8V
7V
160
2.2
140
120
6V
100
80
5V
60
VGS = 10V
2.4
RDS(on) - Normalized
180
I D - Amperes
4
Fig. 4. RDS(on) Normalized to ID = 100A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
2.0
1.8
I D = 200A
1.6
I D = 100A
1.4
1.2
40
1.0
20
0.8
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 100A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.8
140
External Lead Current Limit for TO-263 (7-Lead)
2.6
120
2.4
TJ = 175ºC
2.2
100
2
I D - Amperes
RDS(on) - Normalized
3
VDS - Volts
VDS - Volts
VGS = 10V
15V - - - -
1.8
1.6
1.4
80
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
1.2
1
20
TJ = 25ºC
0.8
0
0.6
0
40
80
120
160
200
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
240
280
320
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTH200N085T
IXTQ200N085T
Fig. 8. Transconductance
Fig. 7. Input Admittance
270
180
240
210
TJ = - 40ºC
140
180
g f s - Siemens
I D - Amperes
160
TJ = -40ºC
25ºC
150ºC
150
120
25ºC
120
100
150ºC
80
90
60
60
40
30
20
0
0
3
3.5
4
4.5
5
5.5
6
0
6.5
30
60
90
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
10
240
9
VDS = 43V
8
I D = 25A
180
210
240
270
300
I G = 10mA
7
180
VGS - Volts
IS - Amperes
210
150
TJ = 150ºC
90
150
Fig. 10. Gate Charge
270
120
120
I D - Amperes
6
5
4
3
TJ = 25ºC
60
2
30
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
20
40
60
80
100
120
140
160
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1.00
Z(th)JC - ºC / W
Capacitance - PicoFarads
Ciss
1,000
Coss
Crss
f = 1 MHz
100
0
5
0.10
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTA200N085T
IXTP200N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
100
100
RG = 5Ω
90
VGS = 10V
TJ = 25ºC
VDS = 43V
80
t r - Nanoseconds
t r - Nanoseconds
90
70
60
50
RG = 5Ω
70
VGS = 10V
VDS = 43V
60
50
I D = 50A
40
80
40
I D = 25A
TJ = 125ºC
30
30
25
35
45
55
65
75
85
95
105
115
25
125
30
35
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
TJ = 125ºC, VGS = 10V
97
60
68
94
55
120
50
I D = 50A
100
45
I D = 25A
80
40
60
35
40
30
20
6
8
10
12
14
16
18
64
88
62
tf
td(off) - - - -
85
60
RG = 5Ω, VGS = 10V
82
VDS = 43V
58
79
76
I D = 50A
54
25
35
45
72
105
115
70
125
320
180
td(off) - - - -
85
80
RG = 5Ω, VGS = 10V
75
VDS = 43V
58
70
TJ =125ºC
54
65
290
TJ = 125ºC, VGS = 10V
VDS = 43V
160
t f - Nanoseconds
t f - Nanoseconds
95
260
140
230
I D = 50A
120
I D = 25A
200
100
170
80
140
60
110
t d ( o f f ) - Nanoseconds
90
TJ = 125ºC
56
85
td(off) - - - -
tf
100
t d ( o f f ) - Nanoseconds
66
60
75
200
95
tf
65
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
105
TJ = 25ºC
68
62
55
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
64
73
52
20
RG - Ohms
70
91
56
25
4
I D = 25A
66
t d ( o n ) - Nanoseconds
t r - Nanoseconds
70
t d ( o f f ) - Nanoseconds
VDS = 43V
140
50
65
td(on) - - - -
t f - Nanoseconds
160
45
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
180
tr
40
I D - Amperes
60
TJ = 25ºC
52
50
55
50
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
40
80
4
6
8
10
12
14
16
18
20
RG - Ohms
IXYS REF: T_200N085T (61) 11-20-06-A.xls
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