MORE MSC0305W -30v(d-s) dual p-channel enhancement mode power mos fet Datasheet

MSC0305W
-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -30V,ID = -5.1A
RDS(ON) < 105mΩ @ VGS=-4.5V
RDS(ON) < 55mΩ @ VGS=-10V
● High Power and current handing capability
Lead Free
● Lead free product is acquired
● Surface Mount Package
Application
● PWM applications
● Load switch
● Power management
PIN Configuration
Marking and pin assignment
D1
D2
G2
G1
S1
S2
Schematic diagram
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SOP-8
Ø330mm
12mm
2500 units
MSC0305W
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
-5.1
A
Drain
IDM
-20
A
PD
2.5
W
TJ,TSTG
-55 To 150
℃
RθJA
50
℃/W
Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
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MSC0305W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
-1.6
-3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5.1A
-
48
55
mΩ
VGS=-4.5V, ID=-4.2A
-
73
105
mΩ
VDS=-15V,ID=-4.5A
4
7
-
S
-
520
-
PF
-
130
-
PF
Crss
-
70
-
PF
Turn-on Delay Time
td(on)
-
7
-
nS
Turn-on Rise Time
tr
VDD=-15V, ID=-1A,
-
13
-
nS
td(off)
VGS=-10V,RGEN=6Ω
-
14
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=-15V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
-
9
-
nS
Total Gate Charge
Qg
-
12
-
nC
Gate-Source Charge
Qgs
-
2.2
-
nC
Gate-Drain Charge
Qgd
-
3
-
nC
-
-
-1.2
V
VDS=-15V,ID=-5.1A,VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=-1.7A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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MSC0305W
Typical Electrical and Thermal Characteristics
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 4 Drain Current
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
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ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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ID- Drain Current (A)
Normalized On-Resistance
MSC0305W
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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ID- Drain Current (A)
MSC0305W
Vds Drain-Source Voltage (V)
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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MSC0305W
SOP-8 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
1.350
1.750
0.053
0.069
A1
0.100
0.250
0.004
0.010
A2
1.350
1.550
0.053
0.061
b
0.330
0.510
0.013
0.020
c
0.170
0.250
0.006
0.010
D
4.700
5.100
0.185
0.200
E
3.800
4.000
0.150
0.157
E1
5.800
6.200
0.228
0.244
e
1.270(BSC)
0.050(BSC)
L
0.400
1.270
0.016
0.050
θ
0°
8°
0°
8°
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