IPB17N25S3-100 IPP17N25S3-100 OptiMOS™-T Power-Transistor Product Summary VDS 250 V RDS(on),max 100 mΩ ID 17 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB17N25S3-100 PG-TO263-3-2 3N25100 IPP17N25S3-100 PG-TO220-3-1 3N25100 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25 °C, V GS=10 V 17 T C=100°C, V GS=10V1) 13.3 Unit A Pulsed drain current1) I D,pulse T C=25°C 68 Avalanche energy, single pulse1) E AS I D=5.4A 54 mJ Avalanche current, single pulse I AS - 5.4 A Reverse diode dv /dt dv /dt - 6 Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 107 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 kV/µs 2013-05-13 IPB17N25S3-100 IPP17N25S3-100 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 1.4 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 250 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA Gate threshold voltage V GS(th) V DS=V GS, I D=54µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=250V, V GS=0V - 0.01 1 - 1 100 V DS=250V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=17A - 85 100 mΩ Rev. 1.1 page 2 2013-05-13 IPB17N25S3-100 IPP17N25S3-100 Parameter Symbol Values Conditions Unit min. typ. max. - 1133 1500 - 480 625 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 11 23 Turn-on delay time t d(on) - 4.4 - Rise time tr - 3.7 - Turn-off delay time t d(off) - 7.5 - Fall time tf - 1.2 - Gate to source charge Q gs - 5 7 Gate to drain charge Q gd - 2.4 4.8 Gate charge total Qg - 14 19 Gate plateau voltage V plateau - 4.6 - V - - 17 A - - 56 V GS=0V, V DS=25V, f =1MHz V DD=125V, V GS=10V, I D=17A, R G=3.3Ω pF ns Gate Charge Characteristics1), 3) V DD=200V, I D=17A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=17A, T j=25°C - 0.9 1.3 V Reverse recovery time1) t rr V R=125V, I F=17A, di F/dt =100A/µs - 120 - ns Reverse recovery charge1) Q rr - 525 - nC 1) T C=25°C Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Devices thermal performance determined according to EIA JESD 51-14 "Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance" Rev. 1.1 page 3 2013-05-13 IPB17N25S3-100 IPP17N25S3-100 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V; SMD 125 20 18 100 16 14 12 ID [A] Ptot [W] 75 50 10 8 6 25 4 2 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 100 101 1 µs 10 µs 100 0.5 10 ID [A] ZthJC [K/W] 100 µs 0.1 10-1 0.05 0.01 1 1 ms single pulse 10-2 0.1 10-3 0.1 1 10 100 1000 VDS [V] Rev. 1.1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-05-13 IPB17N25S3-100 IPP17N25S3-100 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 68 500 10 V 5.5 V 5V 5.5 V 400 34 RDS(on) [mΩ] ID [A] 51 5V 300 200 10 V 17 100 0 0 6 12 18 24 0 30 0 17 34 VDS [V] 51 68 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 25V R DS(on) = f(T j); I D = 17 A; V GS = 10 V; SMD parameter: T j 300 60 250 RDS(on) [mΩ] 200 ID [A] 40 150 100 20 175 °C 50 25 °C -55 °C 0 3 4 5 6 VGS [V] Rev. 1.1 0 -60 -20 20 60 100 140 180 Tj [°C] page 5 2013-05-13 IPB17N25S3-100 IPP17N25S3-100 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 Ciss 103 VGS(th) [V] C [pF] 540 µA 3 Coss 102 54 µA 2.5 Crss 2 101 1.5 -60 -20 20 60 100 140 0 180 5 10 15 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 1012 10 IF [A] IAV [A] 1023 30 150 °C 100 °C 25 °C 25 °C 1001 1 175 °C 25 °C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.1 25 VDS [V] Tj [°C] 175 °C 20 0.1 0.1 1 10 100 1000 10000 tAV [µs] page 6 2013-05-13 IPB17N25S3-100 IPP17N25S3-100 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 300 200 280 150 260 EAS [mJ] VBR(DSS) [V] 250 1.35 A 100 220 2.7 A 50 240 5.4 A 200 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 17 A pulsed parameter: V DD 10 V GS 9 Qg 8 50 V 7 200 V VGS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw Q gate 1 Q gs 0 0 5 10 Q gd 15 Qgate [nC] Rev. 1.1 page 7 2013-05-13 IPB17N25S3-100 IPP17N25S3-100 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2012 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2013-05-13 IPB17N25S3-100 IPP17N25S3-100 Revision History Version Date Changes Revision 1.0 18.10.2012 Final Data Sheet Revision 1.1 12.05.2013 Update of diagram 5 and 6 Rev. 1.1 page 9 2013-05-13