BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 3 — 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit. Mode of operation CW f VDS PL(1dB) Gp D (GHz) (V) (W) (dB) (%) 1.3 50 250 17 56 1.2 Features and benefits Typical CW performance at a frequency of 1.3 GHz, a supply voltage of 50 V, an IDq of 100 mA: Output power = 250 W Power gain = 17 dB Efficiency = 56 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications BLF6G13L-250P; BLF6G13LS-250P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G13L-250P (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 3 5 5 [1] source 3 4 4 2 sym117 BLF6G13LS-250P (SOT1121B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 2 1 5 3 5 [1] 3 4 4 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G13L-250P - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A BLF6G13LS-250P - earless flanged LDMOST ceramic package; 4 leads SOT1121B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage 0.5 +13 V ID drain current - 42 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 Min Max Unit - 100 V © NXP B.V. 2011. All rights reserved. 2 of 14 NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-c) thermal resistance from junction to case Tcase = 85 C; PL = 250 W Typ Unit 0.26 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.4 mA Min Typ Max Unit 100 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 235 mA 1.4 1.8 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 21 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 240 nA gfs forward transconductance VDS = 10 V; ID = 120 mA - 1 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 4.75 A - 200 - m Table 7. RF characteristics Mode of operation: CW; f = 1.3 GHz; RF performance at VDS = 50 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter PL output power VDS drain-source voltage Gp RLin D Conditions Min Typ Max Unit 250 - - W PL = 250 W - - 50 V power gain PL = 250 W 15 17 - dB input return loss PL = 250 W - 30 20 dB drain efficiency PL = 250 W 52 56 - % 6.1 Ruggedness in class-AB operation The BLF6G13L-250P and BLF6G13LS-250P are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 100 mA; PL = 250 W; f = 1.3 GHz. BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor 7. Application information 7.1 CW 001aan868 19 Gp Gp (dB) 60 ηD (%) 45 16 ηD 30 13 10 0 50 100 150 200 250 15 300 350 PL (W) VDS = 50 V; IDq = 100 mA. Fig 1. Power gain and drain efficiency as function of load power; typical values 7.2 2-Carrier CW 001aan869 19 60 Gp Gp (dB) ηD (%) 16 45 ηD 13 10 30 0 100 200 PL (W) 15 300 VDS = 50 V; IDq = 100 mA; carrier spacing = 100 kHz. Fig 2. Power gain and drain efficiency as function of load power; typical values BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 BLF6G13L-250P; BLF6G13LS-250P NXP Semiconductors Power LDMOS transistor 001aan870 21 001aan871 -10 IMD3 (dBc) Gp (dB) -20 18 -30 (8) (7) (6) (5) (4) (3) (2) (1) 15 (1) (2) (3) (4) (5) (6) (7) (8) -40 -50 12 0 50 100 150 -60 200 250 PL (W) VDS = 50 V; f = 1300 MHz; carrier spacing = 100 kHz. 0 50 (1) IDq = 100 mA (2) IDq = 300 mA (2) IDq = 300 mA (3) IDq = 500 mA (3) IDq = 500 mA (4) IDq = 700 mA (4) IDq = 700 mA (5) IDq = 900 mA (5) IDq = 900 mA (6) IDq = 1100 mA (6) IDq = 1100 mA (7) IDq = 1300 mA (7) IDq = 1300 mA (8) IDq = 1500 mA (8) IDq = 1500 mA Power gain as a function of load power; typical values 150 200 250 PL (W) VDS = 50 V; f = 1300 MHz; carrier spacing = 100 kHz. (1) IDq = 100 mA Fig 3. 100 Fig 4. Third order intermodulation distortion as a function of load power; typical values 7.3 Impedance information Table 8. Typical impedance Typical values valid per section unless otherwise specified. f ZS ZL optimized for Gp ZL optimized for D MHz 1200 3.03 j8.15 2.03 j0.25 1.46 j0.47 1300 4.06 j9.52 1.67 j0.92 1.19 j0.95 1400 7.00 j9.61 1.50 j1.48 1.22 j1.49 drain 1 gate 1 ZS ZL gate 2 drain 2 Fig 5. 001aak544 Definition of transistor impedance BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor 7.4 Circuit information Table 9. List of components For application circuit see Figure 6. Component Description Value Remarks C1, C2 multilayer ceramic chip capacitor 1.9 pF [1] C3, C4 multilayer ceramic chip capacitor 4.7 pF [1] C5 multilayer ceramic chip capacitor 10 pF [1] C6, C7, C8, C9, C10, C11, C38, C39 multilayer ceramic chip capacitor 56 pF [1] C12, C13 multilayer ceramic chip capacitor 100 pF [2] C14, C15, C32, C34 multilayer ceramic chip capacitor 1 nF [2] C16, C17 electrolytic capacitor 10 F; 50 V 220 X5R C20, C21, C22, C23 multilayer ceramic chip capacitor 3.0 pF [1] C40, C41 multilayer ceramic chip capacitor 2.4 pF [1] C42, C43, C44, C45 multilayer ceramic chip capacitor 2.7 pF [1] C24 multilayer ceramic chip capacitor 0.8 pF [1] C25 multilayer ceramic chip capacitor 0.6 pF [1] C26, C27, c28, C29, C30, C31, C33, C35 multilayer ceramic chip capacitor 100 pF [1] C36, C37 multilayer ceramic chip capacitor 20 nF [3] C46, C47 electrolytic capacitor 100 F; 63 V R1, R2 SMD resistor 0603 5.1 UT-141C-25-TP SR1 COAX 25 UT-141C-35-TP SR2 COAX 35 [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 200B or capacitor of same quality. BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 BLF6G13L-250P; BLF6G13LS-250P NXP Semiconductors Power LDMOS transistor C39 C46 C37 C14 C12 C40 C17 C11 C6 C7 C8 C9 SR1 C34 C35 SR2 C31 C20 C2 C3 C21 C23 C22 C24 C30 C25 C29 C28 C1 C10 C16 C44 R1 C4 C5 C42 C27 C32 R2 C26 C41 C43 C45 C13 C15 C33 C36 C47 6.600 mm C38 4.200 mm 2.700 mm 4.300 mm 2.800 mm 1.500 mm 001aan872 Printed-Circuit Board (PCB): Duroid 4350B; r = 3.48; thickness = 0.762 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 6. Component layout for application circuit BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 BLF6G13L-250P; BLF6G13LS-250P NXP Semiconductors Power LDMOS transistor 8. Test information 8.1 Reliability 001aao402 105 Years (1) (2) (3) (4) (5) 104 103 102 10 1 0 2 4 6 8 10 IDS(DC) (A) 12 MTTF (Years) The reliability at pulsed conditions can be calculated as follows: MTTF x 1 / . (1) Tj = 130 C (2) Tj = 140 C (3) Tj = 150 C (4) Tj = 160 C (5) Tj = 170 C Fig 7. Electromigration (IDS(DC), total device) BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 BLF6G13L-250P; BLF6G13LS-250P NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A D A F D1 U1 B q C H1 c 2 1 p U2 H E1 E 5 A w1 3 A B 4 b w2 C Q e 0 5 Dimensions Unit(1) mm 10 mm scale A max 4.75 nom min 3.45 b c D D1 3.94 0.18 20.02 19.96 3.68 0.10 19.61 19.66 E e E1 F H H1 p Q(2) 9.53 9.53 1.14 19.94 12.83 3.38 1.70 9.27 9.27 0.89 18.92 12.57 3.12 1.45 q U1 U2 27.94 8.89 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.133 0.067 inches nom 0.35 min 0.136 0.145 0.004 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.123 0.057 References IEC JEDEC JEITA 0.25 0.51 1.345 0.39 0.01 0.02 1.1 1.335 0.38 sot1121a_po European projection Issue date 09-10-12 10-02-02 SOT1121A Fig 8. w2 33.91 9.65 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version w1 34.16 9.91 Package outline SOT1121A BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 BLF6G13L-250P; BLF6G13LS-250P NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 4 leads SOT1121B D A F 5 D1 D U1 w2 H1 H c D 2 1 U2 E1 E 4 3 b Q w3 e 0 5 10 mm scale Dimensions Unit(1) mm A max 4.75 nom min 3.45 b c D D1 3.94 0.18 20.02 19.96 3.68 0.08 19.61 19.66 E e E1 F H H1 Q U1 U2 w2 w3 9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91 8.89 0.51 0.25 9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39 inches nom 0.35 0.02 0.01 min 0.136 0.145 0.003 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA Issue date 09-10-12 09-12-14 SOT1121B Fig 9. sot1121b_po European projection Package outline SOT1121B BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Acronym Abbreviations Description CW Continuous Wave LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor MTTF Mean Time To Failure RF Radio Frequency SMD Surface Mount Device VSWR Voltage Standing-Wave Ratio 12. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G13L-250P_6G13LS-250P v.3 20111014 Product data sheet - BLF6G13L-250P_ 6G13LS-250P v.2 Modifications: • • • Table 6 on page 3: Several values have been updated Table 7 on page 3: The minimum value for D has been updated Section 8.1 on page 8: This section has been added BLF6G13L-250P_6G13LS-250P v.2 20110321 Objective data sheet - BLF6G13L-250P_ 6G13LS-250P v.1 BLF6G13L-250P_6G13LS-250P v.1 20101102 Objective data sheet - - BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. 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Export might require a prior authorization from competent authorities. BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 12 of 14 NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 14 October 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.3 7.4 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-Carrier CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 5 Circuit information. . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Handling information. . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 October 2011 Document identifier: BLF6G13L-250P_6G13LS-250P