Infineon IDW60C65D1 Emitter controlled diode rapid 1 common cathode sery Datasheet

Diode
RapidSwitchingEmitterControlledDiode
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Datasheet
IndustrialPowerControl
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
RapidSwitchingEmitterControlledDiode
Features:
A1 C1 C2 A2
A2
A1
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Temperaturestablebehaviourofkeyparameters
•Lowforwardvoltage(VF)
•Ultrafastrecovery
•Lowreverserecoverycharge(Qrr)
•Lowreverserecoverycurrent(Irrm)
•175°Cjunctionoperatingtemperature
•Pb-freeleadplating
•RoHScompliant
C
Applications:
•AC/DCconverters
•BoostdiodeinPFCstages
•Freewheelingdiodesininvertersandmotordrives
•Generalpurposeinverters
•Switchmodepowersupplies
1
Packagepindefinition:
2
3
•Pin1-anode(A1)
•Pin2andbackside-cathode(C)
•Pin3-anode(A2)
Key Performance and Package Parameters
Type
IDW60C65D1
Vrrm
If
Vf, Tvj=25°C
Tvjmax
Marking
Package
650V
2x 30A
1.35V
175°C
C60ED1
PG-TO247-3
2
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Maximum Ratings (per leg)
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Symbol
Value
Unit
Repetitivepeakreversevoltage,Tvj≥25°C
VRRM
650
V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
60.0
30.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
90.0
A
Diode surge non repetitive forward current
TC=25°C,tp=10.0ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
142.0
71.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
240.0
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
Thermal Resistances (per leg)
Parameter
Characteristic
Symbol Conditions
Max. Value
Unit
Diode thermal resistance,1)
junction - case
Rth(j-c)
1.06
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
Electrical Characteristics (per leg), at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
1.35
1.32
1.28
1.70
-
-
Unit
Static Characteristic
Diode forward voltage
VF
IF=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Reverse leakage current2)
IR
VR=650V
Tvj=25°C
Tvj=175°C
40.0
1200.0
-
V
µA
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
13.0
-
Unit
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
2)
LE
nH
Pleasebeawarethatinnonstandardloadconditions,duetohighRth(j-c),TvjclosetoTvjmaxcanbereached.
Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg.
4
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
-
66
-
ns
-
0.73
-
µC
-
16.8
-
A
-
-1370
-
A/µs
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
-
115
-
ns
-
0.45
-
µC
-
5.4
-
A
-
-660
-
A/µs
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=175°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
-
105
-
ns
-
1.83
-
µC
-
25.6
-
A
-
-1000
-
A/µs
Tvj=125°C,
VR=400V,
IF=30.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
-
154
-
ns
-
0.98
-
µC
-
9.8
-
A
-
-490
-
A/µs
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
5
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
150
60
140
130
50
110
IF,FORWARDCURRENT[A]
Ptot,POWERDISSIPATION[W]
120
100
90
80
70
60
50
40
30
40
30
20
10
20
10
0
25
50
75
100
125
150
0
175
25
TC,CASETEMPERATURE[°C]
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Power dissipation per leg as a function of
case temperature
(Tvj≤175°C)
Figure 2. Diode forward current per leg as a function of
case temperature
(Tvj≤175°C)
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
single pulse
1E-5
1E-4
0.001
0.01
160
140
120
100
80
60
40
20
i:
1
2
3
4
5
6
ri[K/W]: 0.030888 0.23348 0.33605 0.40625 0.04654 2.9E-3
τi[s]:
2.3E-5
2.2E-4
1.7E-3
0.010438 0.079114 1.80538
0.01
1E-6
Tvj=25°C,IF=30A
Tvj=125°C,IF=30A
Tvj=175°C,IF=30A
180
trr,REVERSERECOVERYTIME[ns]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
200
0
200
0.1
tp,PULSEWIDTH[s]
600
1000
1400
1800
2200
2600
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Diode transient thermal impedance per leg as Figure 4. Typical reverse recovery time per leg as a
a function of pulse width
function of diode current slope
(D=tp/T)
(VR=400V)
6
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
2.50
Irrm,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
2.25
35
Tvj=25°C,IF=30A
Tvj=125°C,IF=30A
Tvj=175°C,IF=30A
2.00
1.75
1.50
1.25
1.00
0.75
0.50
30
Tvj=25°C,IF=30A
Tvj=125°C,IF=30A
Tvj=175°C,IF=30A
25
20
15
10
5
0.25
0.00
200
600
1000
1400
1800
2200
2600
0
200
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typical reverse recovery charge per leg as a
function of diode current slope
(VR=400V)
1400
1800
2200
2600
3000
60
Tvj=25°C,IF=30A
Tvj=125°C,IF=30A
Tvj=175°C,IF=30A
Tvj=25°C
Tvj=175°C
50
-400
IF,FORWARDCURRENT[A]
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs]
1000
Figure 6. Typical peak reverse recovery current per leg
as a function of diode current slope
(VR=400V)
0
-200
600
dIF/dt,DIODECURRENTSLOPE[A/µs]
-600
-800
-1000
-1200
-1400
-1600
40
30
20
10
-1800
-2000
200
600
1000
1400
1800
2200
2600
0
0.00
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VF,FORWARDVOLTAGE[V]
Figure 7. Typical diode peak rate of fall of rev. rec.
current per leg as a function of diode current
slope
(VR=400V)
7
Figure 8. Typical diode forward current per leg as a
function of forward voltage
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
2.25
IF=7.5A
IF=15A
IF=30A
IF=45A
IF=60A
VF,FORWARDVOLTAGE[V]
2.00
1.75
1.50
1.25
1.00
0.75
0.50
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typical diode forward voltage per leg as a
function of junction temperature
8
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
PG-TO247-3
9
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
10
Rev.2.1,2014-12-10
IDW60C65D1
Emitter Controlled Diode Rapid 1 Common Cathode Series
Revision History
IDW60C65D1
Revision: 2014-12-10, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2014-12-02
Preliminary data sheet
2.1
2014-12-10
Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
11
Rev. 2.1, 2014-12-10
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