ASB AWB512 5 ~ 1200 mhz wide-band catv linear amplifier mmic Datasheet

AWB519
AWB519 Data Sheet
5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC
1. Product Overview
1.1
General Description
AWB519, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of
frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and
drop amplifiers of CATV. The amplifier is available in an SOT89 package and passes through the stringent
100% DC & RF test via an automated test handler.
1.2
Features
 5 ~ 1200 MHz Bandwidth
 20.4 dB Gain at 500 MHz
 Output Power: 99 dBV
 2.6 dB NF at 500MHz
 Robust under Hard Operating Conditions
 +8 V, 135 mA Supply
1.3
Applications
 CATV forward at 50 ~ 1200 MHz
 CATV reverse at 5 ~ 300 MHz
 Optical Node, FTTH, RFoG
1.4
Package Profile & RoHS Compliance
SOT89, 4.5x4.0 mm2, surface mount
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RoHS-compliant
April 2014
AWB519
2. Summary on Product Performances
2.1
Typical Performance
Supply voltage = +8 V, TA = +25 C, ZO = 75 
Parameter
Reverse
Forward
Unit
Frequency
5
50
300
50
500
1000
MHz
Noise Figure
-
2.5
2.7
2.5
2.6
2.5
dB
Gain
20.9
21.1
20.3
21.0
20.4
18.9
dB
S11
-20.5
-25.0
-16.0
-17.0
-16.0
-18.0
dB
S22
-20.0
-27.0
-14.5
-17.5
-20.0
-16.0
dB
CSO1)
-
61
dBc
CTB1)
-
73
dBc
Current
135
mA
Device Voltage
+8
V
1) Pout = 99 dBV for CENELEC-42.
2.2
Product Specification
Supply voltage = +8 V, TA = +25 C, ZO = 75 
Parameter
Min
Typ
Frequency
500
Noise Figure
2.6
Unit
MHz
2.9
dB
Gain
19.4
20.4
dB
S11
-13
-16.0
dB
S22
-17
-20.0
dB
Current
115
135
Device Voltage
2.3
2/17
Max
+8
155
mA
V
Pin Configuration
Pin
Description
1
RF_IN
2
Ground
3
RF_OUT & Bias
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AWB519
2.4
Absolute Maximum Ratings
Parameters
Max. Ratings
Operation Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Device Voltage
+9 V
Maximum Current
235 mA
Operation Junction Temperature
+150 C
Input RF Power (CW, 75  matched)
+25 dBm
2.5
Thermal Resistance
Symbol
Description
Typ
Unit
Rth
Thermal resistance from junction to lead
42
C/W
2.6
ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1B
Voltage Level: 750 V
MM
Class A
Voltage Level: 100 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control techniques should be used when handling
these devices.
Moisture Sensitivity Level
MSL 3 at 260 C reflow
(Intentionally Blanked)
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AWB519
3. Application: 50 ~ 1000 MHz (CATV forward, Vsupply = +8 V)
3.1
Application Circuit & Evaluation Board
Vdevice = +8 V
C4
L1
RF IN
L2
C1
L3
C2
RF OUT
AWB519
C3
PCB Information
Material
FR4
Thickness (mm)
0.8
Size (mm)
40x40
EB No.
EB-89-A10
Bill of Material
4/17
Symbol
Value
Size
Description
Manufacturer
AWB519
-
-
MMIC Amplifier
ASB
C1, C2
1 F
0603
DC blocking capacitor
Murata
C3
1.2 pF
0603
Matching capacitor
Murata
C4
10 F
0805
Decoupling capacitor
Murata
L1
1 H
1206
RF choke inductor
Murata
L2
10 nH
0603
Matching inductor
Murata
L3
5.6 nH
0603
Matching inductor
Murata
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AWB519
3.2
Performance Table
Supply voltage = +8 V, TA = +25 C, ZO = 75 
Parameter
Forward
Unit
Frequency
50
500
860
1000
MHz
Noise Figure
2.5
2.6
2.6
2.5
dB
Gain
21.0
20.4
19.7
18.9
dB
S11
-17.0
-16.0
-19.0
-18.0
dB
S22
-17.5
-20.0
-17.0
-16.0
dB
CSO1)
61
dBc
CTB1)
73
dBc
Current
135
mA
Device Voltage
+8
1) Pout = 99 dBV for CENELEC-42.
40
30
20
10
0
-10
-20
-30
-40
-50
-60
S21
S11
S12
S22
0
5/17
200
ASB Inc.
400
600
800
Frequency (MHz)
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K
1000
10
9
8
7
6
5
4
3
2
1
0
1200
Stability Factor, K
Plot of S-parameter & Stability Factor
S-parameters (dB)
3.3
V
April 2014
AWB519
3.4
Plots of Noise Figure and Performances with Temperature
5
22
21
4
3
Gain (dB)
NF (dB)
20
NF
2
1
0
18
-40 °C
17
+25 °C
16
+85 °C
15
0
200
400
600
800
Frequency (MHz)
1000
1200
0
0
200
400
600
800
Frequency (MHz)
1000
1200
0
-10
S22 (dB)
-10
S11 (dB)
19
-20
-40 °C
-20
-40 °C
-30
+25 °C
+25 °C
-30
-40
+85 °C
+85 °C
-40
-50
0
200
400
600
800
Frequency (MHz)
1000
1200
0
150
30
145
25
140
20
200
400
600
800
Frequency (MHz)
1000
1200
Gain (dB)
Current (mA)
Frequency = 500 MHz
135
130
10
125
5
120
0
-60
6/17
15
-40
-20
0
20
40
Temperature (°C)
60
80
100
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-40
-20
0
20
40
Temperature (°C)
60
80
100
April 2014
AWB519
5
Frequency = 500 MHz
NF (dB)
4
3
2
1
0
-60
-40
-20
0
20
40
Temperature (°C)
60
80
100
(Intentionally Blanked)
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AWB519
4. Application: 50 ~ 1200 MHz (CATV forward, Vsupply = +8 V)
4.1
Application Circuit & Evaluation Board
Vdevice = +8 V
C5
L2
C3
L3
L1
C1
RF IN
C4
RF OUT
AWB519
C2
R1
PCB Information
Material
FR4
Thickness (mm)
0.8
Size (mm)
40x40
EB No.
EB-89-A10
Bill of Material
8/17
Symbol
Value
Size
Description
Manufacturer
AWB519
-
-
MMIC Amplifier
ASB
C1, C4
1 F
0603
DC blocking capacitor
Murata
C2
0.5 pF
0603
Matching capacitor
Murata
C3
33 pF
0603
Matching capacitor
Murata
C5
10 F
0805
Decoupling capacitor
Murata
L1
6.8 nH
0603
Matching inductor
Murata
L2
1 H
1206
RF choke inductor
Murata
L3
5.6 nH
0603
Matching inductor
Murata
R1
18 
0603
Matching resistor
Samsung
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AWB519
4.2
Performance Table
Supply voltage = +8 V, TA = +25 C, ZO = 75 
Forward
Frequency
50
500
1002
1200
MHz
Noise Figure
3.4
2.4
2.1
2.7
dB
Gain
20.0
20.1
19.0
18.3
dB
S11
-17
-14
-19
-18
dB
S22
-14
-21
-16
-13
dB
Current
135
mA
Device Voltage
+8
V
S21
S11
S12
S22
K
200
ASB Inc.
400
600
800
Frequency (MHz)
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1000
10
9
8
7
6
5
4
3
2
1
0
1200
Stability Factor, K
40
30
20
10
0
-10
-20
-30
-40
-50
-60
0
9/17
Unit
Plot of S-parameter & Stability Factor
S-parameters (dB)
4.3
Parameter
April 2014
AWB519
5. Application: 5 ~ 300 MHz (CATV reverse, Vsupply = +8 V)
5.1
Application Circuit & Evaluation Board
Vdevice = +8 V
C3
L1
C2
C1
RF IN
RF OUT
AWB519
L2
R1
PCB Information
Material
FR4
Thickness (mm)
0.8
Size (mm)
40x40
EB No.
EB-89-B2
Bill of Material
10/17
Symbol
Value
Size
Description
Manufacturer
AWB519
-
-
MMIC Amplifier
ASB
C1, C2
1 F
0603
DC blocking capacitor
Murata
C3
10 F
0805
Decoupling capacitor
Murata
L1
22 H
1206
RF choke inductor
Murata
L2
6.8 H
0603
Matching inductor
Samsung
R1
300 
0603
Matching resistor
Samsung
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AWB519
5.2
Performance Table
Supply voltage = +8 V, TA = +25 C, ZO = 75 
Parameter
Reverse
Unit
Frequency
5
50
300
MHz
Noise Figure
-
2.5
2.7
dB
Gain
20.9
21.1
20.3
dB
S11
-20.5
-25.0
-16.0
dB
S22
-20.0
-27.0
-14.5
dB
Output P1dB
24.5
25.5
25.5
dBm
Output
IP31)
36.0
40.5
42.0
dBm
Output
IP21), 2)
55
53
57
dBm
Current
135
mA
Device Voltage
+8
V
1) OIP3 and OIP2 are measured with two tones at the output power of +10 dBm/tone separated by 6 MHz.
2) OIP2 is measured at F1+F2 Frequency.
40
30
20
10
0
-10
-20
-30
-40
-50
-60
S22
0
11/17
10
9
S21
8
7
6
5
S11 4
S12
3
2
K
1
0
100
150
200
250
300
Frequency (MHz)
50
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Stability Factor, K
Plot of S-parameter & Stability Factor
S-parameters (dB)
5.3
April 2014
AWB519
Plots of Noise Figure and Performances with Temperature
5
23
4
22
3
Gain (dB)
NF (dB)
5.4
NF
2
21
20
-40 °C
19
1
0
+85 °C
17
0
50
100
150
200
Frequency (MHz)
250
300
0
0
50
100
150
200
Frequency (MHz)
250
300
0
-10
-10
S22 (dB)
S11 (dB)
+25 °C
18
-20
-30
-40 °C
+25 °C
-20
-40 °C
+25 °C
-30
-40
+85 °C
+85 °C
-50
-40
0
50
100
150
200
Frequency (MHz)
250
300
0
150
30
145
25
140
20
50
100
150
200
Frequency (MHz)
250
300
Gain (dB)
Current (mA)
Frequency = 50 MHz
135
130
10
125
5
120
0
-60
12/17
15
-40
-20
0
20
40
Temperature (°C)
60
80
100
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-40
-20
0
20
40
Temperature (°C)
60
80
100
April 2014
AWB519
5
Frequency = 50 MHz
NF (dB)
4
3
2
1
0
-60
-40
-20
0
20
40
Temperature (°C)
60
80
100
(Intentionally Blanked)
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AWB519
6. Application: 50 ~ 1000 MHz (CATV Min VSWR, Vsupply = +8 V)
6.1
Application Circuit & Evaluation Board
Vdevice = +8 V
C5
R2
L1
C1
RF IN
R1
L2
C2
L3
RF OUT
AWB519
C4
C3
PCB Information
Material
FR4
Thickness (mm)
0.8
Size (mm)
40x40
EB No.
EB-89-B2
Bill of Material
14/17
Symbol
Value
Size
Description
Manufacturer
AWB519
-
-
MMIC Amplifier
ASB
C1, C2
1 F
0603
DC blocking capacitor
Murata
C3
1 pF
0603
Matching capacitor
Murata
C4
33 pF
0603
Matching capacitor
Murata
C5
10 F
0805
Decoupling capacitor
Murata
L1
1 H
1206
RF choke inductor
Murata
L2
8.2 nH
0603
Matching inductor
Samsung
L3
6.8 nH
0603
Matching inductor
Samsung
R1
3.9 
0603
Matching resistor
Samsung
R2
16 
0603
Matching resistor
Samsung
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AWB519
6.2
Performance Table
Supply voltage = +8 V, TA = +25 C, ZO = 75 
Parameter
Reverse
Frequency
50
500
1000
MHz
Noise Figure
2.6
2.5
2.5
dB
Gain
19.8
19.7
18.4
dB
S11
-18
-18
-19
dB
S22
-20
-19
-18
dB
Output P1dB
Unit
24.5
24.5
25.0
dBm
Output
IP31)
41
41
41
dBm
Output
IP21), 2)
55
61
51
dBm
Current
135
mA
Device Voltage
+8
V
1) OIP3 and OIP2 are measured with two tones at the output power of +10 dBm/tone separated by 6 MHz.
2) OIP2 is measured at F1+F2 Frequency.
40
30
20
10
0
-10
-20
-30
-40
-50
-60
S21
S12
K
0
15/17
S22
S11
200
ASB Inc.
400
600
800
Frequency (MHz)
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1000
10
9
8
7
6
5
4
3
2
1
0
1200
Stability Factor, K
Plot of S-parameter & Stability Factor
S-parameters (dB)
6.3
April 2014
AWB519
7. Package Outline (SOT89, 4.5x4.0x1.5 mm)
Part No.
Lot No.
Symbols
A
L
b
b1
C
D
D1
E
E1
e1
H
S
e
AWB519
Pxxxx
Dimensions (In mm)
MIN
NOM
1.40
1.50
0.89
1.04
0.36
0.42
0.41
0.47
0.38
0.40
4.40
4.50
1.40
1.60
3.64
--2.40
2.50
2.90
3.00
0.35
0.40
0.65
0.75
1.40
1.50
MAX
1.60
1.20
0.48
0.53
0.43
4.60
1.75
4.25
2.60
3.10
0.45
0.85
1.60
8. Surface Mount Recommendation (In mm)
NOTE
1. The number and size of ground via holes in a circuit
board are critical for thermal and RF grounding
considerations.
2. Recommended is that the ground via holes be
placed on the bottom of the lead pin 2 and exposed
pad of the device for better RF and thermal
performance, as shown in the drawing at the left
side.
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AWB519
9. Recommended Soldering Reflow Profile
260 C
20~40 sec
Ramp-up
(3 C/sec)
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
10.
Family Products Information
ASB’s AWB-series single-ended CATV amplifiers are available in different gain levels such as 12 dB, 17 dB,
and 20 dB in which they are categorized by two groups according to the device voltage, 5 V and 8 V, so that
a user can select the amplifier for different gain stages to design their system with ease. In addition, AWB3xx
group for 5 V and AWB5xx group for 8 V are provided by almost the same external matching circuit and in a
SOT89 package.
Part Number
Description
Package Type
AWB312
5 ~ 6 V, 12 dB gain CATV amplifier
SOT89
AWB317
5 V, 17 dB gain CATV amplifier
SOT89
AWB319
5 V, 20 dB gain CATV amplifier
SOT89
AWB512
8 V, 12 dB gain CATV amplifier
SOT89
AWB517
8 V, 17 dB gain CATV amplifier
SOT89
AWB519
8 V, 20 dB gain CATV amplifier
SOT89
(End of Datasheet)
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