NJ4N80 POWER MOSFET 4.0A 800V N-CHANNEL POWER MOSFET DESCRIPTION The NJ4N80 is a N-channel mode power MOSFET using advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES 1 TO-220 1 * VDS = 800V * ID = 4.0A * RDS(ON) =3Ω@VGS = 10V. * High switching speed * Improved dv/dt capability * 100% avalanche tested TO-220F 1 TO-251 SYMBOL 1 TO-252 ORDERING INFORMATION Ordering Number Package NJ4N80-LI NJ4N80-BL NJ4N80F-LI NJ4N80A-LI NJ4N80D-TR NJ4N80D-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F TO-251 TO-252 TO-252 D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tape Box Bulk Tube Tube Tape Ree Tube NJ4N80 POWER MOSFET ʳ ʳʳ ʳ ʳʳ ʳʳʳ ʳ ʳʳ ʳʳʳ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed (Note 2) Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) TO-220 TO-220F Power Dissipation TO-251 SYMBOL VDSS VGSS ID IDM EAS EAR dv/dt PD RATINGS 800 ±30 4.0 16 460 13 4.0 106 36 50 UNIT V V A A mJ mJ V/ns W W W TO-252 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=57mH, IAS=4A, VDD= 50V, RG=25ȍ, Starting TJ=25°C 4. ISD 4A, di/dt 200A/ȝs, VDD BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 SYMBOL RATINGS UNIT șJA 62.5 110 °C/W °C/W 110 1.18 3.47 2.5 2.5 °C/W °C/W °C/W °C/W °C/W șJC NJ4N80 POWER MOSFET ʳ ʳʳ ʳ ʳʳ ʳʳʳ ʳ ʳʳ ʳʳʳ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 800 Breakdown Voltage Temperature Coefficient ǻBVDSS/ǻTJ ID=250ȝA,Referenced to 25°C VDS=800V, VGS=0V Drain-Source Leakage Current IDSS VDS=640V, TC=125°C VDS=0V ,VGS=30V Forward Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3.0 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=640V, VGS=10V, Gate-Source Charge QGS ID=4A (Note 1,2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=400V, ID=4A, RG=25ȍ (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =4A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=4A, dIF/dt=100A/ȝs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2% 2. Essentially independent of operating temperature TYP 950 MAX UNIT V mV/°C 10 μA 100 μA 100 nA -100 nA 2.3 5.0 3.0 V ȍ 680 75 8.6 880 100 12 pF pF pF 19 4.2 9.1 16 45 35 35 25 nC nC nC ns ns ns ns 40 100 80 80 4 16 1.4 575 3.65 A A V ns ȝC NJ4N80 POWER MOSFET ʳ ʳʳ ʳ ʳʳ ʳʳʳ ʳ ʳʳ ʳʳʳ TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ4N80 POWER MOSFET ʳ ʳʳ ʳ ʳʳ ʳʳʳ ʳ ʳʳ ʳʳʳ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms NJ4N80 POWER MOSFET ʳ ʳʳ ʳ ʳʳ ʳʳʳ ʳ ʳʳ ʳʳʳ TYPICAL CHARACTERISTICS Drain Current, ID (μA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (μA) 200 150 100 50 150 100 50 0 0 0 0 200 400 600 800 1000 1200 Drain-Source Breakdown Voltage, BVDSS (V) Drain Current, ID (A) 200 1 2 3 4 Gate Threshold Voltage, VTH (V) 5