IRF IRL6297SDPBF Charge and discharge switch for battery application Datasheet

IRL6297SDPbF
DirectFET® Dual N-Channel Power MOSFET ‚
Typical values (unless otherwise specified)
Applications
l
Charge and Discharge Switch for Battery Application
l
Isolation Switch for Input Power or Battery Application
VDSS
Environmentaly Friendly Product
l
RoHs Compliant, Halogen Free
l
RDS(on)
RDS(on)
20V max ±12V max 3.8mΩ@4.5V
Features and Benefits
l
VGS
5.4mΩ@2.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss
Vgs(th)
27nC
9.5nC
1.4nC
21nC
15nC
0.80V
Dual Common-Drain N-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
D
G
G
S
S
D
DirectFET® ISOMETRIC
SA
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
SA
MX
MT
MP
MC
Description
The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET ®
packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The
DirectFET ® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET ® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base Part Number
Package Type
IRL6297SDPbF
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Absolute Maximum Ratings
IDM
Pulsed Drain Current
g
e
e
f
Typical RDS(on) (mΩ)
20
ID = 15A
15
10
T J = 125°C
5
T J = 25°C
0
0
1
2
3
4
5
6
7
8
9
10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
1
www.irf.com © 2013 International Rectifier
Units
20
±12
15
12
58
V
A
140
VGS, Gate-to-Source Voltage (V)
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IRL6297SDTRPbF
Max.
Parameter
VDS
Orderable part number
14.0
ID= 12A
12.0
10.0
VDS= 16V
VDS= 10V
VDS= 4.0V
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
50
60
70
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
September 5, 2013
IRL6297SDPbF
Static @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
BVDSS
∆ΒVDSS/∆TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Parameter
20
–––
–––
6.1
–––
–––
R DS(on)
Static Drain-to-Source On-Resistance
–––
3.8
4.9
Gate Threshold Voltage
–––
0.50
5.4
0.80
6.9
1.10
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-4.1
–––
–––
1.0
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
150
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Qg
Forward Transconductance
Total Gate Charge
60
–––
–––
54
–––
–––
Qg
Qgs1
Total Gate Charge
Pre- Vth Gate-to-Source Charge
–––
–––
27
2.2
–––
–––
Qgs2
Qgd
Post -Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
1.4
9.5
–––
–––
Qgodr
Gate Charge Overdrive
–––
13.9
–––
Qsw
Qoss
Switch charge (Qgs2 + Qgd)
Output Charge
–––
–––
10.9
15
–––
–––
RG
td(on)
Gate Resistance
Turn-On Delay Time
–––
–––
1.8
8.8
–––
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
29
41
–––
–––
tf
Fall Time
–––
41
–––
C iss
C oss
Input Capacitance
Output Capacitance
–––
–––
2245
610
–––
–––
C rss
Reverse Transfer Capacitance
–––
395
–––
Min.
Typ.
–––
–––
VGS(th)
∆VGS(th) /∆TJ
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1.0mA
mΩ
V
mV/°C
µA
nA
S
VGS = 4.5V, ID = 15A
VGS = 2.5V, ID = 12A
h
h
VDS = VGS, ID = 35µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 150°C
VGS = 12V
VGS = -12V
VDS = 10V, ID =12A
VDS = 10V, VGS = 10V, ID = 12A
VDS = 10V
nC
VGS = 4.5V
ID = 12A
See Fig.15
nC
VDS = 16 V, VGS = 0V
Ω
VDD = 10V, VGS = 4.5V
ns
pF
Max. Units
h
ID = 12A
R G = 2.0 Ω
See Fig.17
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
Conditions
MOSFET symbol
25
A
showing the
integral reverse
D
G
–––
140
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
1.2
V
TJ = 25°C, IS = 12A, VGS = 0V
trr
Reverse Recovery Time
–––
28
42
ns
Qrr
Reverse Recovery Charge
–––
21
32
nC
TJ = 25°C, IF = 12A, VDD = 10V
di/dt = 100 A/µs
g
p-n junction diode.
S
h
h
Notes:
† Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com © 2013 International Rectifier
September 5, 2013
IRL6297SDPbF
Absolute Maximum Ratings
Max.
Parameter
e
e
f
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
TSTG
Storage Temperature Range
Units
1.7
1.1
25
270
-40 to + 150
W
°C
Thermal Resistance
e
i
j
fk
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case ,
Junction-to-PCB Mounted
Linear Derating Factor
e
Typ.
Max.
Units
–––
12.5
20
–––
1.0
72
–––
–––
5.1
–––
°C/W
0.014
W/°C
Thermal Response ( Z thJA )
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
0.001
1E-006
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
‡ Used double sided cooling, mounting pad with large heatsink.
ˆ Mounted on minimum footprint full size board with metalized
‰ Rθ is measured at TJ of approximately 90°C.
back and with small clip heatsink.
ƒ Surface mounted on 1 in. square Cu
board (still air).
3
‰ Mounted to a PCB with small
clip heatsink (still air)
www.irf.com © 2013 International Rectifier
‰ Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
September 5, 2013
IRL6297SDPbF
1000
1000
100
BOTTOM
VGS
10V
4.5V
3.5V
3.0V
2.6V
2.4V
2.2V
2.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
4.5V
3.5V
3.0V
2.6V
2.4V
2.2V
2.0V
100
2.0V
10
≤60µs PULSE WIDTH
BOTTOM
2.0V
10
≤60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.01
0.1
1
10
1
100
0.01
VDS, Drain-to-Source Voltage (V)
10
100
Fig 5. Typical Output Characteristics
1000
1.6
ID = -8.5A
VDS = 10V
≤60µs PULSE WIDTH
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
1
0.1
V GS = -10V
V GS = -4.5V
1.4
1.2
1.0
0.8
0.6
0
1
1
2
2
3
3
9.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Typical RDS(on) ( mΩ)
10000
Ciss
Coss
Crss
T J = 25°C
Vgs = 2.5V
Vgs = 3.5V
Vgs = 4.5V
Vgs = 6.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
8.0
C oss = C ds + C gd
1000
20 40 60 80 100 120 140 160
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
100000
-60 -40 -20 0
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
0.1
7.0
6.0
5.0
4.0
3.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
www.irf.com © 2013 International Rectifier
0
20
40
60
80
100
120
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
September 5, 2013
IRL6297SDPbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
T J = 150°C
T J = 25°C
10
T J = -40°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
10msec
1msec
1
0.1
VGS = 0V
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
VSD, Source-to-Drain Voltage (V)
40
30
20
10
100
125
100
1.4
1.2
1.0
0.8
ID = 35µA
ID = 250µA
0.6
ID = 1.0mA
ID = 1.0A
0.4
0.2
0
75
10
1.6
Typical VGS(th) Gate threshold Voltage (V)
50
50
1
Fig 11. Maximum Safe Operating Area
60
25
0.1
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
ID, Drain Current (A)
DC
Tc = 25°C
Tj = 150°C
Single Pulse
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
EAS , Single Pulse Avalanche Energy (mJ)
300
ID
2.1A
3.0A
BOTTOM 12A
TOP
250
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
www.irf.com © 2013 International Rectifier
September 5, 2013
IRL6297SDPbF
Id
Vds
Vgs
L
VDD
VCC
DUT
0
20K
1K
Vgs(th)
S
Qgodr
Fig 15a. Gate Charge Test Circuit
Qgd
Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
20V
+
- VDD
IAS
A
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
VDS
VGS
RG
Fig 16b. Unclamped Inductive Waveforms
td(on)
RD
tr
t d(off)
tf
VGS
10%
D.U.T.
+
- VDD
90%
V10V
GS
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 17a. Switching Time Test Circuit
6
www.irf.com © 2013 International Rectifier
Fig 17b. Switching Time Waveforms
September 5, 2013
IRL6297SDPbF
D.U.T
Driver Gate Drive
+
ƒ
+
‚

-
„
•
•
•
•
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
-
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET® Board Footprint, SA Outline
(Small Size Can, A-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G=GATE
D=DRAIN
S=SOURCE
D
D
S
G
S
G
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
www.irf.com © 2013 International Rectifier
September 5, 2013
IRL6297SDPbF
DirectFET® Outline Dimension, SA Outline
(Small Size Can, A-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
J1
K
L
M
P
R
METRIC
MIN MAX
4.75 4.85
3.70 3.95
2.75 2.85
0.35 0.45
0.48 0.52
0.48 0.52
0.68 0.72
0.83 0.87
0.38 0.42
1.08 1.12
0.95 1.05
2.05 2.15
0.59 0.70
0.08 0.17
0.02 0.08
IMPERIAL
MIN
MAX
0.187 0.191
0.146 0.156
0.108 0.112
0.014 0.018
0.019 0.020
0.019 0.020
0.027 0.028
0.033 0.034
0.015 0.016
0.043 0.044
0.037 0.041
0.081 0.085
0.023 0.028
0.003 0.007
0.0008 0.0031
DirectFET® Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com © 2013 International Rectifier
September 5, 2013
IRL6297SDPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
H
D
E
A
B
A
D
C
B
F
F
C
G
H
E
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
G
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRL6297SDTRPBF). For 1000 parts on
7" reel, order IRL6297SDTR1PBF
DIMENSIONS
IMPERIAL
METRIC
MIN
MIN
MAX
MAX
0.311
7.90
0.319
8.10
0.154
3.90
0.161
4.10
0.469
11.90
0.484
12.30
0.215
0.219
5.45
5.55
0.158
4.00
0.165
4.20
0.197
5.00
0.205
5.20
0.059
1.50
N.C
N.C
0.059
1.50
0.063
1.60
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
IMPERIAL
METRIC
METRIC
CODE
MIN
MIN
MAX
MIN
MAX
MAX
MIN
MAX
A
12.992 N.C
6.9
N.C
330.0
N.C
177.77 N.C
B
0.795
0.75
N.C
20.2
N.C
19.06
N.C
N.C
C
0.504
0.53
0.50
12.8
0.520
13.5
13.2
12.8
D
0.059
0.059
N.C
1.5
N.C
1.5
N.C
N.C
E
3.937
2.31
100.0
58.72
N.C
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
0.724
N.C
18.4
13.50
G
0.488
0.47
12.4
11.9
N.C
0.567
14.4
12.01
H
0.469
0.47
11.9
11.9
N.C
15.4
0.606
12.01
Qualification Information†
Qualification level
Moisture Sensitivity Level
Consumer ††
(per JEDEC JESD47F††† guidelines)
††
†††
(per JEDEC J-STD-020D†††)
Yes
RoHS Compliant
†
MSL1
DirectFET Small Can
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2013 International Rectifier
September 5, 2013