MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 ~ • Saves space on printed circuit boards ~ • Ideal for automated placement • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ~ • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS ~ TO-269AA (MBS) General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Package TO-269AA (MBS) IF(AV) 0.5 A VRRM 200 V, 400 V, 600 V IFSM 35 A IR 5 μA VF at IF = 0.4 A 1.0 V TJ max. 150 °C Diode variations Quad Case: TO-269AA (MBS) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MB2S 2 4 6 Maximum repetitive peak reverse voltage VRRM 200 400 600 V Maximum RMS voltage VRMS 140 280 420 V VDC 200 400 600 V Device marking code Maximum DC blocking voltage Maximum average forward output rectified current (fig. 1) on glass-epoxy PCB (1) on aluminum substrate (2) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range IF(AV) MB4S MB6S UNIT 0.5 A 0.8 IFSM 35 A I2t 5.0 A2s TJ, TSTG - 55 to + 150 °C Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad Revision: 19-Aug-13 Document Number: 88661 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode IF = 0.4 A Maximum DC reverse current at rated DC blocking voltage per diode TA = 125 °C Typical junction capacitance per diode 4.0 V, 1 MHz SYMBOL MB2S MB4S VF TA = 25 °C MB6S UNIT 1.0 V 5.0 IR μA 100 13 CJ pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MB4S 85 RJA (2) 70 RJL (1) 20 RJA Typical thermal resistance MB2S (1) MB6S UNIT °C/W Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MB2S-E3/45 0.22 45 100 Tube MB2S-E3/80 0.22 80 3000 13" diameter paper tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 TA = 40 °C Single Half Sine-Wave Aluminum Substrate 0.7 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 0.8 0.6 0.5 Glass Epoxy PCB 0.4 0.3 0.2 Resistive or Inductive Load 0.1 30 25 20 f = 50 Hz f = 60 Hz 15 10 5 1.0 Cycle 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 19-Aug-13 Document Number: 88661 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor 30 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.3 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 25 20 15 10 5 0 0.5 0.7 1.5 1.3 1.1 0.9 0.1 10 1 1000 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Forward Voltage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Reverse Leakage Current (µA) 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0 20 40 80 60 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-269AA (MBS) 0.029 (0.74) 0.017 (0.43) Mounting Pad Layout 0.023 MIN. (0.58 MIN.) 0.161 (4.10) 0.144 (3.65) 0.272 (6.90) 0.252 (6.40) 0.272 MAX. (6.91 MAX.) 0.030 MIN. (0.76 MIN.) 0.105 (2.67) 0.095 (2.41) 0.195 (4.95) 0.179 (4.55) 0 to 8° 0.205 (5.21) 0.195 (4.95) 0.049 (1.24) 0.039 (0.99) 0.062 (1.57) 0.058 (1.47) 0.106 (2.70) 0.090 (2.30) 0.114 (2.90) 0.094 (2.40) Revision: 19-Aug-13 0.0075 (0.19) 0.0065 (0.16) 0.038 (0.96) 0.019 (0.48) 0.008 (0.20) 0.004 (0.10) 0.114 (2.90) 0.110 (2.80) 0.058 (1.47) 0.054 (1.37) 0.105 (2.67) 0.095 (2.41) 0.016 (0.41) 0.006 (0.15) 0.018 (0.46) 0.014 (0.36) Document Number: 88661 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000