DMC1030UFDBQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Features RDS(ON) MAX ID MAX TA = +25°C 34mΩ @ VGS = 4.5V 5.1A 40mΩ @ VGS = 2.5V 4.7A 50mΩ @ VGS = 1.8V 4.2A BVDSS Q1 N-Channel 12V Q2 P-Channel -12 70mΩ @ VGS = 1.5V 3.6A 59mΩ @ VGS = -4.5V -3.9A 81mΩ @ VGS = -2.5V -3.3A 115mΩ @ VGS = -1.8V -2.8A 215mΩ @ VGS = -1.5V -2.0A Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Case: U-DFN2020-6 (Type B) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Load Switch Power Management Functions Portable Power Adaptors Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate) D2 D1 U-DFN2020-6 (Type B) S2 G2 D2 DD1 D1 D2 G2 G1 G1 S1 ESD PROTECTED Gate Protection Diode Pin1 Gate Protection Diode S1 S2 N-CHANNEL MOSFET P-CHANNEL MOSFET Internal Schematic Bottom View Ordering Information (Note 5) Part Number DMC1030UFDBQ-7 DMC1030UFDBQ-13 Notes: Case U-DFN2020-6 (Type B) U-DFN2020-6 (Type B) Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2015 C Jan 1 YM D3 2016 D Feb 2 DMC1030UFDBQ Document number: DS38242 Rev.1 - 2 Mar 3 D3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) 2017 E Apr 4 May 5 2018 F Jun 6 1 of 9 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D January 2016 © Diodes Incorporated DMC1030UFDBQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage VDSS Q1 N-CHANNEL 12 Gate-Source Voltage VGSS ±8 ±8 V -3.9 -3.1 A Characteristic Continuous Drain Current (Note 6) N-CHANNEL: VGS = 4.5V P-CHANNEL: VGS = -4.5V Symbol Steady State TA = +25°C TA = +70°C ID 5.1 4.1 t < 5s TA = +25°C TA = +70°C ID 6.6 5.3 Q2 P-CHANNEL -12 IS 2 -5.0 -4.0 -1.7 Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM Avalanche Current (L = 0.1mH) Avalanche Energy (L = 0.1mH) IAS EAS 35 5 4 -25 -5 4 Maximum Continuous Body Diode Forward Current (Note 6) Unit V A A A A mJ Thermal Characteristics Characteristic Symbol RJC Value 1.36 1.89 92 66 18 TJ, TSTG -55 to +150 Steady State t < 5s Steady State t < 5s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Unit W °C/W °C Electrical Characteristics Q1 N-CHANNEL (@ TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS 12 — IDSS IGSS — — — — — 1.0 V μA ±10 μA VGS(TH) 0.4 — 1 V — 17 34 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 4.6A — 20 40 24 50 mΩ VGS = 2.5V, ID = 4.2A — — 28 0.7 70 1.2 1003 132 — RDS(ON) VSD — Ciss — Coss Crss — — Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR Test Condition VGS = 0V, ID = 250μA VDS = 12V, VGS = 0V VGS = ±8V, VDS = 0V VGS = 1.8V, ID = 3.8A VGS = 1.5V, ID = 1.5A V pF pF 115 — — — 11.3 — Ω — 12.2 — nC — 23.1 — nC — — — — — — — 1.3 1.5 4.4 7.4 18.8 4.9 7.6 — — — — — — — nC nC ns ns ns ns ns — 0.9 — nC pF VGS = 0V, IS = 4.8A VDS = 6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 6.8A VDD = 6V, VGS = 4.5V, RL = 1.1Ω, RG = 1Ω IS = 5.4A, dI/dt = 100A/μs IS = 5.4A, dI/dt = 100A/μs 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMC1030UFDBQ Document number: DS38242 Rev.1 - 2 2 of 9 www.diodes.com January 2016 © Diodes Incorporated DMC1030UFDBQ 20 VGS = 4.5V 18 VGS = 4.0V ID, DRAIN CURRENT (A) VGS = 3.0V 12 10 8 6 4 VGS = 1.0V VGS = 0.9V 2 0 TA = 85°C TA = 125°C TA = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.04 ) ( E C N A T S 0.03 IS E R -N O E 0.02 C R U O S -N I A R 0.01 D , )N VGS = 1.5V 0.04 VVGS 18V GS==1.8V 0.03 0 0 3 0.05 VGS = 2.5V 0.02 VGS = 4.5V 0.01 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2 VGS = 4.5V TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C O (S D 0 R 0 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 2 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 150°C 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 16 )A ( 14 T N E 12 R R U 10 C N IA 8 R D ,D 6 I 4 VGS = 3.5V 14 V DS = 5.0V 18 VGS = 1.5V VGS = 2.0V VGS = 2.5V ID = 5.0A 1.6 1.4 1.2 VGS = 1.8V ID = 3.0A 1 0.8 0.6 0.4 0.2 0 -50 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN CURRENT (A) 16 20 VGS = 1.8V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMC1030UFDBQ Document number: DS38242 Rev.1 - 2 3 of 9 www.diodes.com 0.00 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 0.04 VGS = 1.8V ID = 3.0A 0.03 VGS = 2.5V ID = 5.0A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature January 2016 © Diodes Incorporated DMC1030UFDBQ VGS(TH), GATE THRESHOLD VOLTAGE (V) 1 )V ( E G A T L O V D L O H S E R H T E T A G , )h 20 18 0.8 IS, SOURCE CURRENT (A) 16 )A ( T 14 N E R 12 R U C 10 E C R 8 U O S 6 ,S I 4 0.6 ID = 1mA ID = 250µA 0.4 0.2 (tS G TA = 125°C TA = 25°C TA = 85°C TA = -55°C 2 V 0 0 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (oC) Figure 7 Gate Threshold Variation vs. Junction Temperature 10000 VGS GATE THRESHOLD VOLTAGE (V) Ciss 1000 Coss 100 Crss 10 0 0.3 0.6 0.9 1.2 1.5 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 f = 1MHz CT, JUNCTION CAPACITANCE (pF) TA = 150°C 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 12 6 4 VDS = 10V ID = 6.8A 2 0 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 25 100 RDS(ON) Limited ID, DRAIN CURRENT (A) 10 )A ( T N E R R U 1 C N I A R D ,D 0.1 I DC PW = 10s PW = 1s PW= 100ms P W= 10ms P W= 1ms TJ(max) = 150°C TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 100µs 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA Safe Operation Area DMC1030UFDBQ Document number: DS38242 Rev.1 - 2 100 4 of 9 www.diodes.com January 2016 © Diodes Incorporated DMC1030UFDBQ Electrical Characteristics Q2 P-CHANNEL (@ TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -12 — -1.0 VGS = 0V, ID = -250μA — — — V IDSS IGSS μA — — ±10 μA VDS = -12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) -0.4 — -1 V VDS = VGS, ID = -250μA — 37 59 — 48 81 — 69 115 — 88 -0.7 215 -1.2 1028 — — pF 285 pF Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) Test Condition VGS = -4.5V, ID = -3.6A mΩ VGS = -2.5V, ID = -3.1A VGS = -1.8V, ID = -2.6A VGS = -1.5V, ID = -0.5A VSD — Output Capacitance Ciss Coss — — Reverse Transfer Capacitance Crss — 254 — Gate Resistance Rg — 19.6 — Ω — 13 — nC — 20.8 1.8 — nC nC VDS = -10V, ID = -4.7A nC ns ns ns ns ns VDD = -6V, VGS = -4.5V, RL = 1.6Ω, RG = 1Ω nC IS = -3.6A, dI/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Total Gate Charge (VGS = -4.5V) Qg Total Gate Charge (VGS = -8V) Gate-Source Charge tD(ON) tR tD(OFF) tF tRR — — — — — — — QRR — Qgs Qgd Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge 7.8 — pF VGS = 0V, IS = -3.7A VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz IS = -3.6A, dI/dt = 100A/μs 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 20 VGS = -4.5V 18 VGS = -3.0V 16 VGS = -3.5V VGS = -1.8V 14 12 VGS = -1.5V 10 VDS = -5.0V 18 VGS = -4.0V 16 -ID, DRAIN CURRENT (A) 20 VGS = -2.0V -ID, DRAIN CURRENT (A) Notes: 4.5 5.6 12.8 30.7 25.4 31.6 — — — — — — — V 8 6 VGS = -1.0V 4 14 12 10 8 6 TA = 150C 4 2 T A = 125 C 2 0 0.5 1 1.5 2 2.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 12 Typical Output Characteristics DMC1030UFDBQ Document number: DS38242 Rev.1 - 2 3 5 of 9 www.diodes.com 0 TA = 25C TA = -55 C VGS = -0.9V 0 T A = 85C 0 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 13 Typical Transfer Characteristics 3 January 2016 © Diodes Incorporated 0.3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMC1030UFDBQ VGS = -1.8V 0.25 0.2 VGS = -1.5V 0.15 0.1 VGS = -2.5V 0.05 VGS = -4.5V 0 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN-SOURCE CURRENT (A) Figure 14 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 VGS = -2.5V ID = -5.0A 1.4 1.2 1 VGS = -1.8V ID = -3.0A 0.8 VGS = -4.5V 0.6 0.4 0.2 0 -50 TA = 125C TA = 85C 0.04 TA = 25C TA = -55C 0.03 0.02 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 15 Typical On-Resistance vs. Drain Current and Temperature 20 0.09 VGS = -1.8V ID = -3.0A 0.08 0.07 0.06 0.05 VGS = -2.5V ID = -5.0A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 17 On-Resistance Variation with Temperature 1 20 18 0.8 ) A ( T N E R R U C E C R U O S ,S -I -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0 0.1 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 16 On-Resistance Variation with Temperature )V ( E G A T L O V D L O H S E R H T E T A G , )H TA = 150C 0.05 20 2 1.6 0.06 -ID =1mA 0.6 -ID = 250µA 0.4 0.2 T ( S G 16 14 12 10 TA = 150°C 8 TA = 125°C 6 4 TA = 85°C TA = -55°C 2 V 0 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Figure 18 Gate Threshold Variation vs. Ambient Temperature DMC1030UFDBQ Document number: DS38242 Rev.1 - 2 6 of 9 www.diodes.com TA = 25°C 0 0.3 0.6 0.9 1.2 1.5 -VSD , SOURCE-DRAIN VOLTAGE (V) Figure 19 Diode Forward Voltage vs. Current January 2016 © Diodes Incorporated DMC1030UFDBQ 10000 -V GS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1000 Coss C rss 100 10 0 10 )A ( T N E R R U 1 C N I A R D ,D 0.1 -I 12 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 21 Gate-Charge Characteristics 25 RDS(on) Limited -ID, DRAIN CURRENT (A) 100 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 20 Typical Junction Capacitance VDS = -10V ID = -4.7A DC PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150°C TA = 25°C VGS = -4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 100µs 1 10 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 22 SOA Safe Operation Area 1 100 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 E C N A T S IS 0.1 E R L A M R E H T T N E 0.01 IS N A R T ),t (r D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 RθJA(t) = r(t)* RθJA RθJA = 159oC/W Duty Cycle, D = t1/t2 Single Pulse 0.001 0.00001 DMC1030UFDBQ Document number: DS38242 Rev.1 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 23 Transient Thermal Resistance 7 of 9 www.diodes.com 10 100 1000 January 2016 © Diodes Incorporated DMC1030UFDBQ Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. U-DFN2020-6 (Type B) A A3 A1 Seating Plane D D2 D2 R0.1 (Pin 50 #1 ID ) E z1 E2 z1 k L U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k 0.45 L 0.25 0.35 0.30 z 0.225 z1 0.175 All Dimensions in mm e z b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. U-DFN2020-6 (Type B) X2 C Dimensions X1(2x) Y2 Y1(2x) G G1 Y C G G1 X X1 X2 Y Y1 Y2 Value (in mm) 0.650 0.150 0.450 0.350 0.600 1.650 0.500 1.000 2.300 X DMC1030UFDBQ Document number: DS38242 Rev.1 - 2 8 of 9 www.diodes.com January 2016 © Diodes Incorporated DMC1030UFDBQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com DMC1030UFDBQ Document number: DS38242 Rev.1 - 2 9 of 9 www.diodes.com January 2016 © Diodes Incorporated