Microsemi MRF581AG Rf & microwave discrete low power transistor Datasheet

MRF581
MRF581G
MRF581A
MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Low Noise - 2.5 dB @ 500 MHZ
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
Macro X
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
MRF581
MRF581A
Unit
VCEO
Collector-Emitter Voltage
18
15
Vdc
VCBO
Collector-Base Voltage
30
Vdc
VEBO
Emitter-Base Voltage
2.5
Vdc
IC
Collector Current
200
mA
Thermal Data
P
P
D
Total Device Dissipation @ TC = 50ºC
Derate above 50ºC
2.5
25
Watts
mW/ ºC
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
1.25
10
Watts
mW/ ºC
-65 to +150
ºC
150
ºC
Tstg
TJmax
Storage Junction Temperature Range
Maximum Junction Temperature
Revision A- December 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.
MRF581
MRF581G
MRF581A
MRF581AG
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Value
Test Conditions
Unit
Min.
Typ.
Max.
18
15
-
-
Vdc
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
30
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
2.5
-
-
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
Emitter Cutoff Current
(Vbe = 2.5 Vdc)
-
-
0.1
mA
50
90
-
200
250
-
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
MRF581
MRF581A
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
MRF581
MRF581A
DYNAMIC
Symbol
COB
Ftau
Test Conditions
Value
Unit
Min.
Typ.
Max.
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
2.0
3.0
pF
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
-
5.0
-
GHz
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.
MRF581
MRF581G
MRF581A
MRF581AG
FUNCTIONAL
Symbol
Value
Test Conditions
Unit
Min.
Typ.
Max.
Noise Figure (50ohms)
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
-
3.0
3.5
NF
Power Gain @ NFmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
13
15.5
U max
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
17.8
-
dB
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
20
-
dB
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
14
15
-
dB
NF
G
G
MSG
2
|S21|
dB
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
100
.610
-137
23.8
116
.026
46
.522
-78
200
.659
-161
13.2
98
.033
47
.351
-106
300
.671
-171
9.0
89
.040
51
.304
-120
400
.675
-178
6.8
83
.047
55
.292
-128
500
.677
176
5.5
77
.055
58
.293
-132
600
.678
172
4.6
72
.064
61
.299
-134
700
.677
168
4.0
68
.073
62
.306
-135
800
.679
184
3.5
64
.082
63
.314
-136
900
.678
160
3.1
60
.092
64
.322
-138
1000
.682
156
2.8
56
.102
65
.311
-139
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.
∠φ
MRF581
MRF581G
MRF581A
MRF581AG
C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor
C7, C10 — 10 µF, Tantalum Capacitor
RFC — VK–200, Ferroxcube
TL1, TL7, TL8 — Microstrip 0.162, x 0.600,
TL3 — Microstrip 0.162, x 0.800,
TL5 — Microstrip 0.120, x 0.440,
TL9, TL10 — Microstrip 0.025, x 4.250,
Board Material — 0.0625, Thick Glass Teflon ε r = 2.55
C2, C3 — 1.0–10 pF, Johanson Capacitor
R1 — 1.0 kΩ Res.
FB — Ferrite Bead, Ferroxcube, 56–590–65/3B
TL2 — Microstrip 0.162, x 1.000,
TL4 — Microstrip 0.162, x 0.440,
TL6 — Microstrip 0.120, x 1.160,
Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.
MRF581
MRF581G
MRF581A
MRF581AG
20 400
20 400
16 500
16 500
16 330
18 1000
12 50
TO-39
0.5
0.5
1
1
1.5
1.5
10
13
10
10
11
11
65 7.5 16 150
60 12.5 16 150
45 28 30 400
45 28 30 400
50 12.5 16 400
50 12.5 16 400
MACRO X
MRF559
NPN 870 0.5
MACRO X
MRF559
NPN 870 0.5
SO-8
MRF8372,R1,R2 NPN 870 0.75
POWER MACRO
MRF557
NPN 870 1.5
POWER MACRO
MRF557T
NPN 870 1.5
6.5
9.5
8
8
8
70
65
55
55
55
7.5
12.5
12.5
12.5
12.5
16
16
16
16
16
150
150
200
400
400
10 15
12
1200
3.4 30 15
3.4 30 15
15
1300
17
900
1
12 50
13
30 400
30 400
4.5 1.5
6
TO-72
2N2857
NPN 300
5.5 50
6
1600
1
15 40
TO-39
MRF517
NPN 300
7.5 50 15
5.5 4600
3
25 150
TO-72
MRF904
NPN 450
1.5
5
6
11
4000
1
15 30
TO-72
2N6304
NPN 450
5
2
5
14
1400
1
15 50
BFR91
NPN 500
1.9
2
5
BFR96
NPN 500
2
10 10
MRF5812, R1, R2 NPN 500
2
50 10 15.5 17.8 5000
15 200
50 10
14
15
5000
15 200
15
MACRO T
SO-8
MACRO X
11
16.5 5000
1
14.5 500
2.6
12 35
15 100
MRF581A
NPN 500
2
Macro
BFR90
NPN 500
2.4
2
10
18
5000
TO-72
BFY90
NPN 500
2.5
2
5
20
1300
15 50
TO-72
MRF914
NPN 500
2.5
5
10
15
4500
12 40
2.5 50 10
MACRO X
MRF581
NPN 500
TO-39
MRF586
NPN 500
MACRO X
MRF951
NPN 1000 1.3
MACRO X
MRF571
NPN 1000 1.5 10
MACRO T
BFR91
NPN 1000 2.5
2
MACRO T
BFR90
NPN 1000
2
10
10
TO-39
MRF545
PNP
TO-39
MRF544
NPN
3
3
15
17.8 5000
90 15
11
14.5 4500
5
6
14
6
10
5
8
1
15 30
16 200
2.2
17 200
17
8000 0.45 10 100
11
5000
1
12 35
12.5 5000
1
15 30
2
70 400
8000
14
1400
13.5 1500
1
10 70
70 400
RF (LNA / General Purpose) Selection Guide
1
1
2
2
4
8
5
1
4
3
3
Macro X
20 400
NPN 200
Low Cost RF Plastic Package Options
Macro T
3.5
11.4 1000
2N5179
RF (Low Power PA / General Purpose) Selection Guide
4
Ccb(pF)
BVCEO
IC max (mA)
NPN 200
TO-72
3
Ftau (MHz)
Gu Max (dB)
NF (dB)
NF IC (mA)
NF VCE
GN (dB)
NPN 200
MACRO T
MACRO X
MRF559
MACRO X
MRF559
TO-39
2N3866A
SO-8
MRF3866, R1, R2
POWER MACRO
MRF555
POWER MACRO
MRF555T
Type
2N5109
MRF5943C
MRF5943, R1, R2 NPN 200
TO-39
SO-8
Freq (MHz)
Device
Packag
512
512
400
400
470
470
12
12
12.5
12.5
12.5
12.5
6
IC max (mA)
NPN
NPN
NPN
NPN
NPN
NPN
60
50
60
50
50
50
BVCEO
18
10
11.5
11.5
11.5
7.8
20
Efficiency (%)
175 0.15
175
1
175 1.5
175 1.5
175 1.75
175
3
200
GPE VCC
GPE (dB)
MRF4427, R2
2N4427
MRF553
MRF553T
MRF607
2N6255
2N5179
GPE Freq (MHz)
NPN
NPN
NPN
NPN
NPN
NPN
NPN
Type
Pout (watts)
SO-8
TO-39
POWER MACRO
POWER MACRO
TO-39
TO-39
TO-72
Device
Package
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
Power
SO-8
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.
MRF581
MRF581G
MRF581A
MRF581AG
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
1.
2.
4.
3.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.
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