LM146, LM346 www.ti.com SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 LM146/LM346 Programmable Quad Operational Amplifiers Check for Samples: LM146, LM346 FEATURES DESCRIPTION 1 • • • • • • • • • 2 • • (ISET=10 μA) Programmable Electrical Characteristics Battery-Powered Operation Low Supply Current: 350 μA/Amplifier Ensured Gain Bandwidth Product: 0.8 MHz Min Large DC Voltage Gain: 120 dB Low Noise Voltage: 28 nV/√Hz Wide Power Supply Range: ±1.5V to ±22V Class AB Output Stage–No Crossover Distortion Ideal Pin Out for Biquad Active Filters Input Bias Currents are Temperature Compensated The LM146 series of quad op amps consists of four independent, high gain, internally compensated, low power, programmable amplifiers. Two external resistors (RSET) allow the user to program the gain bandwidth product, slew rate, supply current, input bias current, input offset current and input noise. For example, the user can trade-off supply current for bandwidth or optimize noise figure for a given source resistance. In a similar way, other amplifier characteristics can be tailored to the application. Except for the two programming pins at the end of the package, the LM146 pin-out is the same as the LM124 and LM148. Connection Diagram Figure 1. Dual-In-Line Package - Top View See Package Number NFE0016A, D0016A or N16A PROGRAMMING EQUATIONS Total Supply Current = 1.4 mA (ISET/10 μA) Gain Bandwidth Product = 1 MHz (ISET/10 μA) Slew Rate = 0.4V/μs (ISET/10 μA) Input Bias Current ≃ 50 nA (ISET/10 μA) ISET = Current into pin 8, pin 9 (see Schematic Diagram) (1) 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA information current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004, Texas Instruments Incorporated LM146, LM346 SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 www.ti.com Capacitorless Active Filters (Basic Circuit) These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) (3) LM146 LM346 Supply Voltage ±22V ±18V Differential Input Voltage (2) ±30V ±30V CM Input Voltage (2) Power Dissipation (4) ±15V ±15V 900 mW 500 mW Output Short-Circuit Duration (5) Continuous Continuous Operating Temperature Range −55°C to +125°C 0°C to +70°C Maximum Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10 seconds) Thermal Resistance (θjA) (4) CDIP (NFE) 150°C 100°C −65°C to +150°C −65°C to +150°C 260°C 260°C Pd 900 mW 900 mW θjA 100°C/W 100°C/W SOIC (D) θjA 115°C/W PDIP (N) Pd 500 mW θjA Soldering Information 90°C/W Dual-In-Line Package Soldering (10 seconds) +260°C +260°C Small Outline Package Vapor Phase (60 seconds) +215°C +215°C Infrared (15 seconds) +220°C +220°C ESD rating is to be determined. (1) (2) (3) (4) (5) 2 Refer to RETS146X for LM146J military specifications. For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by TjMAX, θjA, and the ambient temperature, TA. The maximum available power dissipation at any temperature is Pd=(TjMAX - TA)/θjA or the 25°C PdMAX, whichever is less. Any of the amplifier outputs can be shorted to ground indefinitely; however, more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 LM146, LM346 www.ti.com SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 DC ELECTRICAL CHARACTERISTICS (VS=±15V, ISET=10 µA) (1) Parameter Conditions LM146 Min LM346 Typ Max Min Typ Max Units Input Offset Voltage VCM=0V, RS≤50Ω, TA=25°C 0.5 5 0.5 6 mV Input Offset Current VCM=0V, TA=25°C 2 20 2 100 nA Input Bias Current VCM=0V, TA=25°C 50 100 50 250 nA Supply Current (4 Op Amps) TA=25°C 1.4 2.0 1.4 2.5 Large Signal Voltage Gain RL=10 kΩ, ΔVOUT=±10V, TA=25°C Input CM Range TA=25°C CM Rejection Ratio RS≤10 kΩ, TA=25°C Power Supply Rejection Ratio mA 100 1000 50 1000 ±13.5 ±14 ±13.5 ±14 V 80 100 70 100 dB RS≤10 kΩ, TA=25°C, VS = ±5 to ±15V 80 100 74 100 dB Output Voltage Swing RL≥10 kΩ, TA=25°C ±12 ±14 ±12 ±14 Short-Circuit TA=25°C 5 20 5 20 Gain Bandwidth Product TA=25°C 0.8 1.2 0.5 1.2 Phase Margin TA=25°C 60 60 Deg Slew Rate TA=25°C 0.4 0.4 V/μs Input Noise Voltage f=1 kHz, TA=25°C 28 28 8 nV/√Hz Channel Separation RL=10 kΩ, ΔVOUT=0V to ±12V, TA=25°C 120 120 dB Input Resistance TA=25°C 1.0 1.0 MΩ Input Capacitance TA=25°C 2.0 2.0 pF Input Offset Voltage VCM=0V, RS≤50Ω 0.5 6 0.5 7.5 mV Input Offset Current VCM=0V 2 25 2 100 nA Input Bias Current VCM=0V 50 100 50 250 nA 1.7 2.2 1.7 2.5 Supply Current (4 Op Amps) Large Signal Voltage Gain RL=10 kΩ, ΔVOUT=±10V Input CM Range 35 V/mV V 35 mA MHz mA 50 1000 25 1000 V/mV ±13.5 ±14 ±13.5 ±14 V 70 100 70 100 dB CM Rejection Ratio RS≤50Ω Power Supply Rejection Ratio RS≤50Ω, VS = ±5V to ±15V 76 100 74 100 dB Output Voltage Swing RL≥10 kΩ ±12 ±14 ±12 ±14 V (1) These specifications apply over the absolute maximum operating temperature range unless otherwise noted. DC ELECTRICAL CHARACTERISTIC (VS=±15V, ISET=10 μA) Parameter Conditions LM146 Min LM346 Typ Max 0.5 5 Min Units Typ Max 0.5 7 Input Offset Voltage VCM=0V, RS≤50Ω, TA=25°C Input Bias Current VCM=0V, TA=25°C 7.5 20 7.5 100 nA Supply Current (4 Op Amps) TA=25°C 140 250 140 300 μA Gain Bandwidth Product TA=25°C 80 100 50 100 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 mV kHz 3 LM146, LM346 SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 www.ti.com DC ELECTRICAL CHARACTERISTICS (VS=±1.5V, ISET=10 μA) Parameter Conditions LM146 Min Input Offset Voltage VCM=0V, RS≤50Ω, TA=25°C Input CM Range TA=25°C CM Rejection Ratio RS≤50Ω, TA=25°C Output Voltage Swing RL≥10 kΩ, TA=25°C 4 LM346 Typ Max 0.5 5 ±0.7 Min Typ Max 0.5 7 ±0.7 80 ±0.6 Submit Documentation Feedback mV V 80 ±0.6 Units dB V Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 LM146, LM346 www.ti.com SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 TYPICAL PERFORMANCE CHARACTERISTICS Input Bias Current vs ISET Supply Current vs ISET Figure 2. Figure 3. Open Loop Voltage Gain vs ISET Slew Rate vs ISET Figure 4. Figure 5. Gain Bandwidth Product vs ISET Phase Margin vs ISET Figure 6. Figure 7. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 5 LM146, LM346 SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) 6 Input Offset Voltage vs ISET Common-Mode Rejection Ratio vs ISET Figure 8. Figure 9. Power Supply Rejection Ratio vs ISET Open Voltage Swing vs Supply Voltage Figure 10. Figure 11. Input Voltage Range vs Supply Voltage Input Bias Current vs Input Common-Mode Voltage Figure 12. Figure 13. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 LM146, LM346 www.ti.com SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Input Bias Current vs Temperature Input Offset Current vs Temperature Figure 14. Figure 15. Supply Current vs Temperature Open Loop Voltage Gain vs Temperature Figure 16. Figure 17. Gain Bandwidth Product vs Temperature Slew Rate vs Temperature Figure 18. Figure 19. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 7 LM146, LM346 SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) 8 Input Noise Voltage vs Frequency Input Noise Current vs Frequency Figure 20. Figure 21. Power Supply Rejection Ratio vs Frequency Voltage Follower Pulse Response Figure 22. Figure 23. Voltage Follower Transient Response Transient Response Test Circuit Figure 24. Figure 25. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 LM146, LM346 www.ti.com SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 APPLICATION HINTS Avoid reversing the power supply polarity; the device will fail. COMMON-MODE INPUT VOLTAGE The negative common-mode voltage limit is one diode drop above the negative supply voltage. Exceeding this limit on either input will result in an output phase reversal. The positive common-mode limit is typically 1V below the positive supply voltage. No output phase reversal will occur if this limit is exceeded by either input. OUTPUT VOLTAGE SWING VS ISET For a desired output voltage swing the value of the minimum load depends on the positive and negative output current capability of the op amp. The maximum available positive output current, (ICL+), of the device increases with ISET whereas the negative output current (ICL−) is independent of ISET. Figure 26 illustrates the above. Figure 26. Output Current Limit vs ISET INPUT CAPACITANCE The input capacitance, CIN, of the LM146 is approximately 2 pF; any stray capacitance, CS, (due to external circuit circuit layout) will add to CIN. When resistive or active feedback is applied, an additional pole is added to the open loop frequency response of the device. For instance with resistive feedback (Figure 27), this pole occurs at ½π (R1||R2) (CIN + CS). Make sure that this pole occurs at least 2 octaves beyond the expected −3 dB frequency corner of the closed loop gain of the amplifier; if not, place a lead capacitor in the feedback such that the time constant of this capacitor and the resistance it parallels is equal to the RI(CS + CIN), where RI is the input resistance of the circuit. Figure 27. Resistive Feedback Circuit Example TEMPERATURE EFFECT ON THE GBW The GBW (gain bandwidth product), of the LM146 is directly proportional to ISET and inversely proportional to the absolute temperature. When using resistors to set the bias current, ISET, of the device, the GBW product will decrease with increasing temperature. Compensation can be provided by creating an ISET current directly proportional to temperature (see Typical Applications). ISOLATION BETWEEN AMPLIFIERS The LM146 die is isothermally layed out such that crosstalk between all 4 amplifiers is in excess of −105 dB (DC). Optimum isolation (better than −110 dB) occurs between amplifiers A and D, B and C; that is, if amplifier A dissipates power on its output stage, amplifier D is the one which will be affected the least, and vice versa. Same argument holds for amplifiers B and C. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 9 LM146, LM346 SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 www.ti.com LM146 TYPICAL PERFORMANCE SUMMARY The LM146 typical behaviour is shown in Figure 28. The device is fully predictable. As the set current, ISET, increases, the speed, the bias current, and the supply current increase while the noise power decreases proportionally and the VOSremains constant. The usable GBW range of the op amp is 10 kHz to 3.5−4 MHz. Figure 28. LM146 Typical Characteristics Low Power Supply Operation: The quad op amp operates down to ±1.3V supply. Also, since the internal circuitry is biased through programmable current sources, no degradation of the device speed will occur. SPEED VS POWER CONSUMPTION LM146 vs LM4250 (single programmable). Through Figure 29, we observe that the LM146's power consumption has been optimized for GBW products above 200 kHz, whereas the LM4250 will reach a GBW of no more than 300 kHz. For GBW products below 200 kHz, the LM4250 will consume less power. Figure 29. LM146 vs LM4250 10 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 LM146, LM346 www.ti.com SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 Typical Applications Figure 30. Dual Supply or Negative Supply Blasing Figure 31. Single (Positive) Supply Biasing Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 11 LM146, LM346 SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 www.ti.com • The LM334 provides an ISET directly proportional to absolute temperature. This cancels the slight GBW product Temperature coefficient of the LM346. Figure 32. Current Source Biasing with Temperature Compensation • For ISET1≃ISET2 resistors R1 and R2 are not required if a slight error between the 2 set currents can be tolerated. If not, then use R1 = R2 to create a 100 mV drop across these resistors. Figure 33. Biasing all 4 Amplifiers with Single Current Source 12 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 LM146, LM346 www.ti.com SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 Active Filters Applications Figure 34. Basic (Non-Inverting “State Variable”) Active Filter Building Block Note. All resistor values are given in ohms. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 13 LM146, LM346 SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 www.ti.com • If resistive biasing is used to set the LM346 performance, the Qo of this filter building block is nearly insensitive to the op amp's GBW product temperature drift; it has also better noise performance than the state variable filter. Figure 35. A Simple-to-Design BP, LP Filter Building Block Circuit Synthesis Equations •For the eventual use of amplifier C, see comments above. (2) Figure 36. A 3-Amplifier Notch Filter (or Elliptic Filter Building Block) 14 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 LM146, LM346 www.ti.com SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 Circuit Synthesis Equations •For nothing but a notch output: RIN=R, C′=C. (3) Figure 37. Capacitorless Active Filters (Basic Circuit) 1. Pick up a convenient value for b; (b < 1) 2. Adjust Qo through R5 3. Adjust Ho(BP) through R4 4. Adjust fo through RSET. This adjusts the unity gain frequency (fu) of the op amp. Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 15 LM146, LM346 SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 www.ti.com Ex: fc = 20 kHz, Ho (gain of the filter) = 1, Q01 = 0.541, Qo2 = 1.306. •Since for this filter the GBW product of all 4 amplifiers has been designed to be the same (∼1 MHz) only one current source can be used to bias the circuit. Fine tuning can be further accomplished through Rb. Figure 38. A 4th Order Butterworth Low Pass Capacitorless Filter Miscellaneous Applications • For better performance, use a matched NPN pair. Figure 39. A Unity Gain Follower with Bias Current Reduction 16 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 LM146, LM346 www.ti.com SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 • By pulling the SET pin(s) to V− the op amp(s) shuts down and its output goes to a high impedance state. According to this property, the LM346 can be used as a very low speed analog switch. Figure 40. Circuit Shutdown Figure 41. Voice Activated Switch and Amplifier Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 17 LM146, LM346 SNOSBH5B – MAY 2004 – REVISED SEPTEMBER 2004 www.ti.com • CMRR: 100 dB (typ) • Power dissipation: 0.4 mW Figure 42. x10 Micropower Instrumentation Amplifier with Buffered Input Guarding Schematic Diagram 18 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM146 LM346 PACKAGE OPTION ADDENDUM www.ti.com 1-Nov-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) LM346M NRND SOIC D 16 48 TBD Call TI Call TI 0 to 70 LM346M LM346M/NOPB ACTIVE SOIC D 16 48 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM346M LM346MX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM346M (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device LM346MX/NOPB Package Package Pins Type Drawing SOIC D 16 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 16.4 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 10.3 2.3 8.0 W Pin1 (mm) Quadrant 16.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM346MX/NOPB SOIC D 16 2500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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