Renesas NP20P06SLG Switching p-channel power mosfet Datasheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP20P06SLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP20P06SLG-E1-AY
Note
NP20P06SLG-E2-AY
Note
LEAD PLATING
PACKING
PACKAGE
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
(TO-252)
• Super low on-state resistance
RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −10 A)
RDS(on)2 = 64 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
• Low input capacitance
Ciss = 1650 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
ID(DC)
m20
A
ID(pulse)
m60
A
Drain Current (DC)
(TC
Drain Current (pulse)
= 25°C)
Note1
Total Power Dissipation (TC = 25°C)
PT1
38
W
Total Power Dissipation (TA = 25°C)
PT2
1.2
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
Single Avalanche Current
Note2
IAS
17
A
Single Avalanche Energy
Note2
EAS
28
mJ
Storage Temperature
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
3.9
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19076EJ1V0DS00 (1st edition)
Date Published December 2007 NS
Printed in Japan
2007
NP20P06SLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = −60 V, VGS = 0 V
−10
μA
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m10
μA
VGS(th)
VDS = VGS, ID = −250 μA
−1.0
−1.6
−2.5
V
| yfs |
VDS = −10 V, ID = −10 A
7
14
RDS(on)1
VGS = −10 V, ID = −10 A
36
48
mΩ
RDS(on)2
VGS = −4.5 V, ID = −10 A
42
64
mΩ
Input Capacitance
Ciss
VDS = −10 V,
1650
pF
Output Capacitance
Coss
VGS = 0 V,
200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
130
pF
Turn-on Delay Time
td(on)
VDD = −30 V, ID = −10 A,
8
ns
Rise Time
tr
VGS = −10 V,
8
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
160
ns
Fall Time
tf
80
ns
Total Gate Charge
QG
VDD = −48 V,
34
nC
Gate to Source Charge
QGS
VGS = −10 V,
4
nC
QGD
ID = −20 A
9
nC
VF(S-D)
IF = −20 A, VGS = 0 V
0.95
Reverse Recovery Time
trr
IF = −20 A, VGS = 0 V,
38
ns
Reverse Recovery Charge
Qrr
di/dt = −100 A/μs
51
nC
Gate to Source Threshold Voltage
Note
Forward Transfer Admittance
Drain to Source On-state Resistance
Note
Gate to Drain Charge
Body Diode Forward Voltage
Note
S
1.5
V
Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
50 Ω
PG.
VGS = −20 → 0 V
VDD
RG
PG.
VGS(−)
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS(−)
−
IAS
BVDSS
VDS
ID
VGS(−)
0
VDS
Wave Form
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
2
IG = −2 mA
RL
50 Ω
VDD
Data Sheet D19076EJ1V0DS
VDS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
NP20P06SLG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
40
30
20
10
0
0
0
25
50
75
0
100 125 150 175 200
25
50
75
100 125 150 175 200
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
imi
ID(pulse)
t ed
V)
L
n)
i0
S( o
R D S = −1
G
(V
-10
ID(DC)
-1
PW
=1
i
1i
m
s
i
00
1i 0
DC
Po
w
m
μs
s
i
er
D
is
si
p
-0.1
at
io
n
Li
m
it e
d
TC = 25°C
Single Pulse
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
-100
Rth(ch-A) = 125°C/Wi
100
10
Rth(ch-C) = 3.9°C/Wi
1
0.1
Single Pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19076EJ1V0DS
3
NP20P06SLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-60
-100
VDS = −10 V
Pulsed
-10
VGS = −10 V
ID - Drain Current - A
ID - Drain Current - A
-50
-40
−4.5 V
-30
-20
-10
-1
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
-0.1
-0.01
Pulsed
0
-0.001
0
-1
-2
-3
-4
-5
0
-1
VDS - Drain to Source Voltage - V
VDS = VGS
ID = −250 μA
-2
-1.5
-1
-0.5
0
-25
25
75
125
175
225
Tch = −55°C
−25°C
25°C
75°C
10
125°C
150°C
175°C
1
VDS = −10 V
Pulsed
0.1
-0.1
-10
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
80
60
VGS = −4.5 V
40
−10 V
20
Pulsed
-1
-10
ID - Drain Current - A
-100
RDS(on) - Drain to Source On-state Resistance - mΩ
100
RDS(on) - Drain to Source On-state Resistance - mΩ
-1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
-5
100
Tch - Channel Temperature - °C
0
-0.1
-4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
-3
-75
-3
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-2.5
-2
Data Sheet D19076EJ1V0DS
Pulsed
80
ID = −20 A
−10 A
−4 A
60
40
20
0
0
-5
-10
-15
VGS - Gate to Source Voltage - V
-20
NP20P06SLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
100
Ciss, Coss, Crss - Capacitance - pF
80
VGS = −4.5 V
60
−10 V
40
20
ID = −10 A
Pulsed
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
-0.1
0
-75
-25
25
75
125
175
225
SWITCHING CHARACTERISTICS
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
-60
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
-10
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
td(off)
100
tf
tr
10
VDD = −30 V
VGS = −10 V
RG = 0 Ω
1
-0.1
td(on)
-12
VDD = −48 V
−30 V
−12 V
-50
-40
-10
-8
-30
-6
VGS
-20
-4
-10
-2
VDS
ID = −20 A
0
-1
-10
-100
0
0
10
ID - Drain Current - A
20
30
40
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
-100
1000
VGS = −10 V
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
-1
-10
0V
-1
-0.1
100
Pulsed
-0.01
0
0.5
1
1.5
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1
-1
-10
-100
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
Data Sheet D19076EJ1V0DS
5
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
NP20P06SLG
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
No Plating
1.14 MAX.
3
0.51 MIN.
2
0.8
1
6.1±0.2
10.4 MAX. (9.8 TYP.)
4.0 MIN.
4
No Plating
0 to 0.25
0.5±0.1
0.76±0.12
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
6
Data Sheet D19076EJ1V0DS
NP20P06SLG
• The information in this document is current as of December, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
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customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
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redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
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each NEC Electronics product before using it in a particular application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
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(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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