MBR1090-M3, MBR10100-M3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS® • Trench MOS Schottky technology TO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 TYPICAL APPLICATIONS PIN 1 PIN 2 For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. CASE PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C Package TO-220AC Diode variations Single die MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090 MBR10100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 Maximum average forward rectified current at TC = 133 °C IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A dV/dt 10 000 V/μs TJ, TSTG -65 to +150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range V ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage TEST CONDITIONS IF = 10 A IF = 20 A Maximum reverse current per diode at working peak reverse voltage SYMBOL TC = 25 °C TC = 125 °C TJ = 25 °C TJ = 100 °C VALUE UNIT 0.80 VF (1) 0.65 V 0.75 IR (2) 100 μA 6.0 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 10-May-16 Document Number: 89193 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1090-M3, MBR10100-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance MBR1090 MBR10100 RJA 60 RJC 2.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AC PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.845 4W 50/tube Tube MBR10100-M3/4W RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 100 Instantaneous Forward Current (A) Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 160 100 TJ = TJ max. 8.3 ms Single Half Sine-Wave Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) TJ = 150 °C 10 140 120 100 80 60 TJ = 150 °C 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 40 1 10 100 10 20 30 40 50 60 70 80 90 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics 100 Revision: 10-May-16 Document Number: 89193 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1090-M3, MBR10100-M3 www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 1000 100 10 1 10 1 MBR 0.1 0.01 100 10 Junction to Case 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) 0.380 (9.65) 0.161 (4.08) DIA. 0.139 (3.53) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 10-May-16 Document Number: 89193 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000