TI1 LMP8350MA Ultra-low distortion fully-differential precision adc driver Datasheet

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LMP8350
SNOSB80C – FEBRUARY 2011 – REVISED OCTOBER 2015
LMP8350 Ultra-Low Distortion Fully-Differential Precision ADC Driver With Selectable
Power Modes
1 Features
3 Description
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The LMP8350 device is an ultra low distortion fullydifferential amplifier designed for driving highperformance precision analog-to-digital converters
(ADC). As part of the PowerWise™ family, a unique
mode enable pin allows the user to choose from three
different
operating
modes,
trading
power
consumption for dynamic performance.
1
Differential Input and Output
Tri-Level Power Settings with Shutdown
Ultra Low HD2/HD3 and THD+N Distortion
Adjustable Output Common-Mode Level
Fully-Balanced Differential Architecture
Single- or Dual-Supply Operation
Operating Voltage Range 4.5 V to 12 V
Supply Current 3 mA to 13 mA
Total THD+N at 1 KHz 0.000097%
HD2 / HD3 Distortion at 1 KHz < –124 dBc
Bandwidth 118 mHz
Settling to 0.1% 20 ns
Low Offset Drift 0.4 µV/°C
Offset Voltage 80 µV
Voltage Noise 4.6 nV/Hz
Operating Temperature Range −40°C to +85°C
The high power mode is optimized for highest AC
performance. The low noise, wide bandwidth, and
fast slew rate make the LMP8350 ideal for driving 24bit ADCs with input sampling rates of 10 MHz or less.
The medium power mode is optimized for precision
DC performance, and can be used to drive 24-bit
ADCs with input sampling rates of 6 MHz or less. The
low power mode is a trade-off between AC
performance and quiescent current for powersensitive applications. The disable mode fully shuts
down the amplifier for further standby power savings.
The fully differential architecture of this device allows
for easy implementation of a single-ended to fullydifferential output conversion. Driving a 3-Vpp, 1-kHz
output sine wave with the amplifier powered by ±3.3V rails in high power mode yields 0.000098%
THD+N.
2 Applications
•
•
•
High-Resolution Differential ADC Drivers
Portable Instrumentation
Precision Line Drivers
The LMP8350 is part of the LMP™ precision amplifier
family, and is offered in the 8-pin SOIC package, with
an operating temperature range of −40°C to +85°C.
Device Information(1)
PART NUMBER
LMP8350
PACKAGE
SOIC (8)
BODY SIZE (NOM)
3.91 mm × 4.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
+VREF
+V
+V
VREFP
VA
VIO
+V
RF1
RO1
RG1
VINN
CS
- +
VOCM
+ VINP
CS
LMP8350
SCLK
24 Bit A/D
RO2
VINP
+ RG2
- VINN
SDI
SDO
MicroController
VREFN AGND DGND
RF2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMP8350
SNOSB80C – FEBRUARY 2011 – REVISED OCTOBER 2015
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Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
7
1
1
1
2
3
3
Absolute Maximum Ratings ...................................... 3
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
10-V Electrical Characteristics .................................. 5
6.6-V Electrical Characteristics ................................. 8
5-V Electrical Characteristics .................................. 11
Typical Characteristics ............................................ 14
Detailed Description ............................................ 19
7.1 Overview ................................................................. 19
7.2 Functional Block Diagram ....................................... 19
7.3 Feature Description................................................. 19
7.4 Device Functional Modes........................................ 20
8
Application and Implementation ........................ 22
8.1 Application Information............................................ 22
8.2 Typical Application ................................................. 25
9
Power Supply Recommendations...................... 27
9.1 Power Supply and VOCM Bypassing ....................... 27
10 Layout................................................................... 28
10.1
10.2
10.3
10.4
Layout Guidelines .................................................
Layout Example ....................................................
Power Dissipation .................................................
Evaluation Board...................................................
28
28
29
29
11 Device and Documentation Support ................. 30
11.1
11.2
11.3
11.4
11.5
Documentation Support .......................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
30
30
30
30
30
12 Mechanical, Packaging, and Orderable
Information ........................................................... 30
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (March 2013) to Revision C
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................ 1
Changes from Revision A (March 2013) to Revision B
•
2
Page
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 29
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5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
1
-IN
8
-
2
VOCM
V+
+OUT
+
+IN
7
3
6
4
5
EN
V-
-OUT
Pin Functions
PIN
NO.
NAME
I/O
DESCRIPTION
1
–IN
I
Inverting Input
2
VOCM
I
Output common-mode voltage set input. Sets output common mode voltage equal to the
applied VOCM pin voltage.
3
V+
I
Positive power supply voltage
4
+OUT
O
Noninverting output
5
–OUT
O
Inverting output
6
V–
I
Negative power supply voltage
7
EN
I
Enable and power select input. Applied voltage sets power level or shutdown mode.
8
+IN
I
Noninverting Input
6 Specifications
6.1 Absolute Maximum Ratings (1) (2) (3)
MIN
MAX
UNIT
–0.3
12.9
V
(V+) + 0.3
(V–) – 0.3
V
1
mA
150
°C
150
°C
Output short circuit duration
See
V+ relative to V–
IN+, IN–, OUT, EN and VOCM pins
Input current
Junction temperature (5)
−65
Storage temperature, Tstg
(1)
(2)
(3)
(4)
(5)
(4)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
For soldering specifications: SNOA549
The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit
operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is
sourcing, negative number (–) is sinking.
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
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6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
(3)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) (2)
±2500
Charged-device model (CDM), per JEDEC specification JESD22-C101 (3)
±1250
Machine Model
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC). Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
(1)
See
MIN
MAX
Temperature range (TA)
–40
85
°C
Supply voltage (VS = V+ – V–)
4.5
12
V
(1)
UNIT
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics Tables.
6.4 Thermal Information
LMP8350
THERMAL METRIC (1)
D (SOIC)
UNIT
8 PINS
RθJA
(1)
(2)
4
Junction-to-ambient thermal resistance
(2)
150
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
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6.5 10-V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +10
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted. (1)
TEST CONDITIONS (2)
PARAMETER
MIN (3)
TYP (4)
MAX (3)
UNIT
10-V DC CHARACTERISTICS
TA = 25°C
High power
Input offset voltage
(RTI)
VOS
±0.6
At the temperature extremes
TA = 25°C
Mid power
±0.08
At the temperature extremes
±0.1
At the temperature extremes
±0.5
Low power
±0.4
Input bias current
TA = 25°C
Mid power
Low power
AVOL
Open-loop gain
CMVR
CMRR
Common-mode voltage range (6)
Common-mode rejection ratio
2
2.1
TA = 25°C
2.7
At the temperature extremes
3.2
TA = 25°C
3.5
At the temperature extremes
65
90
Mid power
72
130
Low power
74
114
HP at CMRR ≥ 73 dB
1.2
8.8
MP at CMRR ≥ 83 dB
1.2
8.8
LP at CMRR ≥ 77 dB
1.2
8.8
DC, VOCM = 0,VID = 0, ΔVcm = ±0.2 V, High power
75
90
Medium power
84
130
Low power
79
114
Differential input resistance
VCM = mid-supply
0.48
Differential input capacitance
VCM = mid-supply
1
High power
Mid power
Low power
(1)
(2)
(3)
(4)
(5)
(6)
μA
3.7
High power
CIND
Output swing
(single-ended)
μV/°C
At the temperature extremes
ZIND
VO
±2.5
±0.8
Input offset voltage vs.temperature (5) Mid power
High power
IB
mV
±2.52
High power
TCVOS
±2
±2.03
TA = 25°C
Low power
±4
±4.05
dB
V
dB
MΩ
pF
Low Swing
0.86
0.75
9.14
High Swing
0.86
9.25
9.14
Low Swing
0.85
0.74
9.15
High Swing
0.85
9.26
9.15
Low Swing
0.86
0.81
9.14
High Swing
0.86
9.19
9.14
V
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA
For annotation brevity, “HP”=High Power, “MP”=Medium Power, “LP” =Low Power, “DIS”=Disabled or shut down, “SE”=Single Ended
Mode, “DM”=Differential Mode. See Table 1 in Applications section for power setting details. It is also assumed RG = RG1 = RG2
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Drift Determined by dividing the change in parameter at temperature extremes by the total temperature change. Value is the worst case
of TaMIN to 25°C and 25°C to TaMAX.
At amplifier inputs.
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10-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +10
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
TEST CONDITIONS (2)
PARAMETER
Output shorted to midsupply (7)
High power
ISHORT
Short-circuit current
Medium power
Low power
PSRR
Power supply rejection ratio
VS ±10%
Supply current
TYP (4)
Low Swing
–36
-65
High Swing
75
108
Low Swing
-26
-48
High Swing
60
85
Low Swing
-6
-20
High Swing
15
107
Mid power
118
Low power
124
TA = 25°C
15
At the temperature extremes
TA = 25°C
VEN = 6.25 (8)
TA = 25°C
PD
Power-down mode
At the temperature extremes
Shutdown current
Enable time
dB
18
10
TA = 25°C
mA
4
5
< 1.65
0.75
At the temperature extremes
Enable pin current
ten
mA
11
3
Disable voltage threshold (8)
UNIT
20
8
At the temperature extremes
VEN = 3.75 (8)
MAX (3)
36
High power
VEN = 8.75 (8)
IS
MIN (3)
V
0.9
0.95
100
High power
15
Mid power
20
Low power
40
High power
118
Mid power
87
Low power
31
High power
507
Mid power
393
Low power
178
mA
μA
ns
10-V AC CHARACTERISTICS
SSBW
SR
Small signal bandwidth
200 mVp-p differential
Slew rate
2 Vp-p differential (9)
High power
trise
tfall
ts
en
(7)
(8)
(9)
6
Rise time
2 Vp-p differential
Fall time
2 Vp-p differential
0.1% settling time
2 Vp-p
Input referred voltage noise
at 10 KHz
MHz
V/μs
3
Mid power
3.9
Low power
9.7
High power
2.8
Mid power
3.8
Low power
9.6
2-V step, CL = 20 pF
High power
20
Mid power
25
Low power
38
High power
4.6
Mid power
4.8
Low power
8
ns
ns
ns
nV/√Hz
The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit
operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is
sourcing, negative number (–) is sinking.
Enable voltage is referred to V– (negative supply voltage).
Slew Rate is the average of the rising and falling edges.
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10-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +10
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
TEST CONDITIONS (2)
PARAMETER
In
THD+N
Input referred current noise
at 10 KHz
Total harmonic distortion + noise
3 Vp-p at 1 KHz
2nd harmonic distortion
3 Vp-p, 1 KHz
HD2
2nd harmonic distortion
6 Vp-p, 1 KHz
3rd harmonic distortion
3 Vp-p, 1 KHz
HD3
3rd harmonic distortion
6 Vp-p, 1 KHz
MIN (3)
TYP (4)
f = 10 kHz
High power
1.7
Mid power
1.1
Low power
0.6
High power
0.000097%
Mid power
0.000109%
Low power
0.000185%
High power
–124.7
Mid power
–122.8
Low power
–117.2
High power
–118.9
Mid power
–117.6
Low power
–114.7
High power
–139.9
Mid power
–141.9
Low power
–133.3
High power
–129.5
Mid power
–132.4
Low power
–129.4
High power
4.8
MAX (3)
UNIT
pA/√Hz
–116
dBc
dBc
–126
dBc
dBc
10-V VOCM INPUT CHARACTERISTICS
VOCM small signal bandwidth
200 mVp-p
Mid power
2.4
Low power
0.64
High power
±1.62
Mid power
±0.23
Low power
±0.43
VOCM gain
VOCM offset voltage
1
VOCM voltage range
All power levels
VOCM input resistance
All power levels
Low Swing
1.8
High Swing
8.2
Low Swing
30
High Swing
mid-supply
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MHz
V/V
mV
V
KΩ
7
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SNOSB80C – FEBRUARY 2011 – REVISED OCTOBER 2015
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6.6 6.6-V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +6.6
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted. (1)
TEST CONDITIONS (2)
PARAMETER
MIN (3)
TYP (4)
MAX (3)
UNIT
6.6-V DC CHARACTERISTICS
TA = 25°C
High power
Input offset voltage
(RTI)
VOS
S
Input offset voltage
vs.temperature (5)
IB
Input bias current
±0.1
At the temperature extremes
±0.1
At the temperature extremes
±0.7
Mid power
±0.5
Low power
±0.4
Low power
±2.5
μV/°C
TA = 25°C
1.4
At the temperature extremes
2.4
TA = 25°C
2.5
At the temperature extremes
3.0
TA = 25°C
3.5
At the temperature extremes
65
70
Mid power
73
76
Low power
72
75
HP at CMRR ≥ 68 dB
1.2
5.4
CMVR Common-mode voltage range (6) MP at CMRR ≥ 63 dB
1.2
5.4
LP at CMRR ≥ 79 dB
1.2
5.4
DC, VOCM = 0,VID = 0,
ΔVcm = ±0.2 V
High power
70
85
Mid power
86
117
Low power
81
Open-loop gain
CMRR Common-mode rejection ratio
ZIND
Differential input resistance
VCM = mid-supply
CIND
Differential input capacitance
VCM = mid-supply
High power
VO
Output swing
(single-ended)
Mid power
Low power
(1)
(2)
(3)
(4)
(5)
(6)
8
μA
3.7
High power
AVOL
mV
±2.52
High power
Mid power
±2.8
±2.83
TA = 25°C
High power
±3.5
±3.54
TA = 25°C
Mid power
Low power
TCVO
±0.3
At the temperature extremes
dB
V
dB
113
0.48
MΩ
1
pF
Low Swing
0.84
0.77
5.76
High Swing
0.84
5.83
5.76
Low Swing
0.82
0.75
5.78
High Swing
0.82
5.83
5.78
Low Swing
0.83
0.77
5.77
High Swing
0.83
5.83
5.77
V
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA
For annotation brevity, “HP”=High Power, “MP”=Medium Power, “LP” =Low Power, “DIS”=Disabled or shut down, “SE”=Single Ended
Mode, “DM”=Differential Mode. See Table 1 in Applications section for power setting details. It is also assumed RG = RG1 = RG2
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Drift Determined by dividing the change in parameter at temperature extremes by the total temperature change. Value is the worst case
of TaMIN to 25°C and 25°C to TaMAX.
At amplifier inputs.
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6.6-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +6.6
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
TEST CONDITIONS (2)
PARAMETER
Output shorted to
mid-supply (7)
High power
ISHORT Short-circuit current
Mid power
Low power
PSRR
Power supply rejection ratio
VS ±10%
Supply current
TYP (4)
Low Swing
–30
–49
High Swing
54
83
Low Swing
–19
–35
High Swing
40
64
Low Swing
–6
–15
High Swing
15
111
Mid power
117
Low power
127
VEN = 4.125 (8)
VEN = 2.475 (8)
TA = 25°C
TA = 25°C
ten
Power-down mode
Enable time
Shutdown current
mA
dB
16
9
10
2
At the temperature extremes
TA = 25°C
UNIT
18
7
At the temperature extremes
Disable voltage threshold (8)
PD
14
At the temperature extremes
TA = 25°C
MAX (3)
27
High power
VEN = 5.775 (8)
IS
MIN (3)
mA
3
4
<1.225
0.55
At the temperature extremes
V
0.65
0.7
Enable pin current
40
High power
18
Mid power
22
Low power
43
High power
116
Mid power
85
Low power
29
High power
488
Mid power
376
Low power
166
High power
3.1
mA
μA
ns
6.6-V AC CHARACTERISTICS
Small signal bandwidth
SSBW
200 mVp-p differential
SR
trise
tfall
ts
(7)
(8)
(9)
Slew rate
2 Vp-p differential (9)
Rise time
2 Vp-p differential
Fall time
2 Vp-p differential
0.1% settling time
2 Vp-p
Mid power
4.2
Low power
10.4
High power
3.0
Mid power
4.0
Low power
10.3
2-V step, CL = 20 pF
High power
19
Mid power
25
Low power
43
MHz
V/μs
ns
ns
ns
The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit
operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is
sourcing, negative number (–) is sinking.
Enable voltage is referred to V- (negative supply voltage).
Slew Rate is the average of the rising and falling edges.
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6.6-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF = RG = 1 kΩ, Fully differential input, VS = +6.6
V, RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
TEST CONDITIONS (2)
PARAMETER
en
In
THD+
N
Input referred voltage noise
at 10KHz
Input referred current noise
at 10KHz
Total harmonic distortion +
noise
3 Vp-p at 1 KHz
2nd harmonic distortion
3 Vp-p, 1 KHz
HD2
2nd harmonic distortion
6 Vp-p, 1 KHz
3rd harmonic distortion
3 Vp-p, 1 KHz
HD3
3rd harmonic distortion
6Vp-p, 1KHz
MIN (3)
TYP (4)
High power
4.5
Mid power
4.8
Low power
8
High power
1.7
Mid power
1.2
Low power
0.6
High power
0.000098
%
Mid power
0.00011%
Low power
0.000089
%
High power
–124.7
Mid power
–122.8
Low power
–117.2
High power
–118.9
Mid power
–117.6
Low power
–114.7
High power
–139.9
Mid power
-141.9
Low power
–133.3
High power
–121.4
Mid power
–125.3
Low power
–124.5
High power
4.5
Mid power
2.2
Low power
0.6
MAX (3)
UNIT
nV/√Hz
pA/√Hz
dBc
dBc
dBc
dBc
6.6-V VOCM INPUT CHARACTERISTICS
VOCM small signal bandwidth
200mVp-p
VOCM gain
VOCM offset voltage
10
1
High power
±0.97
Mid power
±0.43
Low power
±0.89
VOCM voltage range
All power levels
VOCM input resistance
All power levels
Low Swing
1.2
High Swing
5.4
Low Swing
30
High Swing
mid-supply
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V/V
mV
V
KΩ
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6.7 5-V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF= RG = 1 kΩ, Fully differential input, VS = +5 V,
RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted. (1)
PARAMETER
TEST CONDITIONS
MIN (2)
TYP (3)
MAX (2)
±0.2
±3.2
UNIT
5-V DC CHARACTERISTICS
High power
Input offset voltage
(RTI)
VOS
S
Input offset voltage
vs.temperature (4)
Mid power
Input bias current
Open-loop gain
CMRR Common-mode rejection ratio
±0.7
Mid power
±0.5
Low power
±0.4
At the temperature extremes
1.6
TA = 25°C
2.5
At the temperature extremes
3.0
TA = 25°C
3.5
68
Mid power
71
75
68
75
1.15
3.85
MP at CMRR ≥ 86 dB
1.15
3.85
LP at CMRR ≥ 80 dB
1.15
3.85
DC, VOCM = 0,VID = 0,
ΔVcm = ±0.2 V
High power
63
79
Mid power
87
114
Low power
82
Differential input capacitance
VCM = mid-supply
High power
Mid power
Low power
(1)
(2)
(3)
(4)
(5)
dB
HP at CMRR ≥ 60 dB
CIND
μA
3.7
63
VCM = mid-supply
Output swing
(single-ended)
μV/°C
1.5
At the temperature extremes
Differential input resistance
VO
±2.0
TA = 25°C
High power
ZIND
mV
±2.3
High power
Low power
CMVR Common-mode voltage range (5)
±0.1
At the temperature extremes
Mid power
±2.0
±2.3
TA = 25°C
Low power
AVOL
±3.6
±0.1
At the temperature extremes
High power
IB
At the temperature extremes
TA = 25°C
Low power
TCVO
TA = 25°C
V
dB
114
0.48
MΩ
1
pF
Low Swing
0.82
0.77
4.18
High Swing
0.82
4.23
4.18
Low Swing
0.82
0.75
4.18
High Swing
0.82
4.25
4.18
Low Swing
0.83
0.77
4.17
High Swing
0.83
4.23
4.17
V
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using the
Statistical Quality Control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Drift Determined by dividing the change in parameter at temperature extremes by the total temperature change. Value is the worst case
of TaMIN to 25°C and 25°C to TaMAX.
At amplifier inputs.
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5-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF= RG = 1 kΩ, Fully differential input, VS = +5 V,
RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
PARAMETER
Output shorted to
mid-supply (6)
High power
ISHORT Short-circuit current
Mid power
Low power
PSRR
Power supply rejection ratio
VS ±10%
Supply current
TYP (3)
Low Swing
–25
–42
High Swing
44
72
Low Swing
–16
–31
High Swing
34
57
Low Swing
–5
–13
High Swing
12
117
Mid power
120
Low power
111
VEN = 3.125 (7)
VEN = 1.875 (7)
TA = 25°C
13
At the temperature extremes
TA = 25°C
At the temperature extremes
PD
ten
Power-down mode
Enable time
Shutdown current
mA
dB
15
9
10
2
At the temperature extremes
Disable voltage threshold (7)
mA
3
4
<1.025
TA = 25°C
UNIT
17
7
TA = 25°C
MAX (2)
23
High power
VEN = 4.375 (7)
IS
MIN (2)
TEST CONDITIONS
0.50
At the temperature extremes
V
0.85
0.90
Enable pin current
15
High power
20
Mid power
22
Low power
50
High power
114.5
mA
μA
ns
5-V AC CHARACTERISTICS
Small signal bandwidth
SSBW
200 mVp-p differential
SR
trIse
tfall
ts
(6)
(7)
(8)
12
Slew rate
2 Vp-p differential (8)
Rise time
2 Vp-p differential
Fall time
2 Vp-p differential
0.1% settling time
2 Vp-p
Mid power
84
Low power
28
High power
476
Mid power
366
Low power
160
High power
3.2
Mid power
4.3
Low power
10.8
High power
3.1
Mid power
4.1
Low power
10.7
2-V step, CL = 20 pF
High power
19
Mid power
24
Low power
48
MHz
V/μs
ns
ns
ns
The short circuit test is a momentary test which applies to both single-supply and split-supply operation. Continuous short circuit
operation at elevated ambient temperature can exceed the maximum allowable junction temperature of 150°C. Positive number (+) is
sourcing, negative number (–) is sinking.
Enable voltage is referred to V- (negative supply voltage).
Slew Rate is the average of the rising and falling edges.
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5-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, Avcl = +1, RF= RG = 1 kΩ, Fully differential input, VS = +5 V,
RL = 2 kΩ//20 pF differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.(1)
PARAMETER
en
In
THD+
N
HD2
HD3
Input referred voltage noise
Input referred current noise
Total harmonic distortion +
noise
3 Vp-p at 1 KHz
2nd harmonic distortion
3 Vp-p, 1 KHz
3rd harmonic distortion
3 Vp-p, 1 KHz
TEST CONDITIONS
MIN (2)
TYP (3)
f = 10 kHz
High power
4.5
Mid power
4.8
Low power
8
f = 10 kHz
High power
1.8
Mid power
1.2
Low power
0.6
High power
0.000107
%
Mid power
0.000114
%
Low power
0.000192
%
High power
–125.3
Mid power
–122.6
Low power
–117.0
High power
–125.5
Mid power
–130.0
Low power
–128.7
High power
4.4
MAX (2)
UNIT
nV/√Hz
pA/√Hz
dBc
dBc
5-V VOCM INPUT CHARACTERISTICS
VOCM small signal bandwidth
200 mVp-p
Mid power
2.2
Low power
0.56
VOCM gain
VOCM offset voltage
1
High power
±0.46
Mid power
±0.53
Low power
±0.11
VOCM voltage range
All power levels
VOCM input resistance
All power levels
Low Swing
1.15
High Swing
3.85
Low Swing
30
High Swing
midsupply
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6.8 Typical Characteristics
3
3
0
0
HP
VOCMGAIN (dB)
DIFFERENTIAL GAIN (dB)
Unless otherwise specified, TA = 25°C, Avcl = +1, RF=RG = 1 kΩ, fully differential input, VS = +10 V, RL = 2 kΩ//20 pF
differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.
-3
-6
HP
-9
Avcl = +1
Vout = 200mVp-p
Differential
-12
-15
1M
MP
ûVocm = 200mVp-p
LP
LP
-15
1G
10k
100k
1M
10M
FREQUENCY (Hz)
100M
Figure 2. VOCM Frequency Response at 10 V
3
3
0
0
HP
VOCMGAIN (dB)
DIFFERENTIAL GAIN (dB)
-9
-12
10M
100M
FREQUENCY (Hz)
-3
-6
HP
-9
-3
-6
-9
MP
-12
Avcl = +1
Vout = 200mVp-p
Differential
-15
1M
MP
-12
ûVocm = 200mVp-p
LP
LP
-15
10M
100M
FREQUENCY (Hz)
1G
Figure 3. Frequency Response at 6.6 V
10k
100k
1M
10M
FREQUENCY (Hz)
100M
Figure 4. VOCM Frequency Response at 6.6 V
3
3
0
0
HP
VOCMGAIN (dB)
DIFFERENTIAL GAIN (dB)
-6
MP
Figure 1. Frequency Response at 10 V
-3
-6
HP
-9
-12
Avcl = +1
Vout = 200mVp-p
Differential
-15
1M
-3
-6
-12
ûVocm = 200mVpp
LP
10M
100M
FREQUENCY (Hz)
MP
-9
MP
LP
-15
1G
Figure 5. Frequency Response at 5 V
14
-3
10k
100k
1M
10M
FREQUENCY (Hz)
100M
Figure 6. VOCM Frequency Response at 5 V
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C, Avcl = +1, RF=RG = 1 kΩ, fully differential input, VS = +10 V, RL = 2 kΩ//20 pF
differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.
-40
-40
f = 1KHz
f = 1KHz
-60
DISTORTION (dBc)
DISTORTION (dBc)
-60
-80
-100
HD2
-120
HD3
-140
-80
-100
HD2
-120
-140
HD3
-160
-160
0
2 4 6 8 10 12 14 16 18
DIFFERENTIAL OUTPUT (Vpp)
0
Figure 7. Distortion at 10 V, High Power
12
Figure 8. Distortion at 6.6 V, High Power
-40
-40
f = 1KHz
f = 1KHz
-60
DISTORTION (dBc)
-60
DISTORTION (dBc)
2
4
6
8
10
DIFFERENTIAL OUTPUT (Vpp)
-80
-100
HD2
-120
-140
-80
-100
HD2
-120
-140
HD3
HD3
-160
-160
0
2 4 6 8 10 12 14 16 18
DIFFERENTIAL OUTPUT (Vpp)
0
Figure 9. Distortion at 10 V, Mid Power
12
Figure 10. Distortion at 6.6 V, Mid Power
-40
-40
f = 1KHz
f = 1KHz
-60
DISTORTION (dBc)
-60
DISTORTION (dBc)
2
4
6
8
10
DIFFERENTIAL OUTPUT (Vpp)
-80
-100
HD2
-120
-140
-80
-100
HD2
-120
-140
HD3
-160
HD3
-160
0
2 4 6 8 10 12 14 16 18
DIFFERENTIAL OUTPUT (Vpp)
Figure 11. Distortion at 10 V, Low Power
0
2
4
6
8
10
DIFFERENTIAL OUTPUT (Vpp)
12
Figure 12. Distortion at 6.6 V, Low Power
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C, Avcl = +1, RF=RG = 1 kΩ, fully differential input, VS = +10 V, RL = 2 kΩ//20 pF
differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.
1
-40
f = 1 kHz
BW = 22 kHz
f = 1KHz
0.1
-80
THD+N (%)
DISTORTION (dBc)
-60
HD3
-100
LP
0.01
HP
0.001
-120
-140
0.00001
HD2
-160
0
1
2
3
4
5
6
7
DIFFERENTIAL OUTPUT (Vpp)
MP
0.000001
0
8
2
10 12 14 16 18 20
1
f = 1 kHz
BW = 22 kHz
f = 1KHz
-60
0.1
-80
THD+N (%)
DISTORTION (dBc)
8
DIFFERENTIAL OUTPUT (Vp-p)
-40
-100
HD2
LP
0.01
HP
0.001
-120
-140
0.0001
HD3
-160
0
1
2
3
4
5
6
7
DIFFERENTIAL OUTPUT (Vpp)
MP
0.00001
0
8
2
4
6
8
10
12
DIFFERENTIAL OUTPUT (Vp-p)
Figure 16. THD+N at 6.6 V
Figure 15. Distortion at 5 V, Mid Power
-40
1
f = 1 kHz
BW = 22 kHz
f = 1KHz
-60
0.1
-80
THD+N (%)
DISTORTION (dBc)
6
Figure 14. THD+N at 10 V
Figure 13. Distortion at 5 V, High Power
-100
HD2
-120
-140
0
1
2
3
4
5
6
7
DIFFERENTIAL OUTPUT (Vpp)
0.01
HP
LP
0.001
MP
0.0001
HD3
-160
8
0.00001
0
1
2
3
4
5
6
7
8
9
10
DIFFERENTIAL OUTPUT (Vp-p)
Figure 17. Distortion at 5 V, Low Power
16
4
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Figure 18. THD+N at 5 V
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C, Avcl = +1, RF=RG = 1 kΩ, fully differential input, VS = +10 V, RL = 2 kΩ//20 pF
differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.
100
100
HP
CURRENT NOISE (S$¥+])
VOLTAGE NOISE (Q9¥+])
HP
MP
10
LP
Differential Out
Referred to Input
1
MP
10
LP
1
Differential Out
Referred to Input
0.1
1
10
100
1k
10k
FREQUENCY (Hz)
100k
1
Figure 19. Voltage Noise at 10 V
10
100
HP
HP
CURRENT NOISE (S$¥+])
VOLTAGE NOISE (Q9¥+])
100k
Figure 20. Current Noise at 10 V
100
LP
10
MP
Differential Out
Referred to Input
1
MP
10
LP
1
Differential Out
Referred to Input
0.1
1
10
100
1k
10k
FREQUENCY (Hz)
100k
1
Figure 21. Voltage Noise at 6.6 V
10
100
1k
10k
FREQUENCY (Hz)
100k
Figure 22. Current Noise at 6.6 V
100
100
HP
HP
CURRENT NOISE (S$¥+])
VOLTAGE NOISE (Q9¥+])
100
1k
10k
FREQUENCY (Hz)
MP
10
LP
Differential Out
Referred to Input
1
MP
10
LP
1
Differential Out
Referred to Input
0.1
1
10
100
1k
10k
FREQUENCY (Hz)
100k
Figure 23. Voltage Noise at 5 V
1
10
100
1k
10k
FREQUENCY (Hz)
100k
Figure 24. Current Noise at 5 V
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Typical Characteristics (continued)
Unless otherwise specified, TA = 25°C, Avcl = +1, RF=RG = 1 kΩ, fully differential input, VS = +10 V, RL = 2 kΩ//20 pF
differentially, Input CMR and VOCM = mid-supply and HP mode unless otherwise noted.
1.5
MP
HP
DIFFERENTIAL OUTPUT (Vpp)
DIFFERENTIAL OUTPUT (Vpp)
1.5
1.0
0.5
0.0
-0.5
LP
-1.0
MP
-1.5
0
40
0.5
0.0
-0.5
LP
-1.0
MP
-1.5
80
120
TIME (ns)
160
MP
HP
1.0
200
0
Figure 25. Pulse Response at 10 V
40
80
120
TIME (ns)
160
200
Figure 26. Pulse Response at 6.6 V
DIFFERENTIAL OUTPUT (Vpp)
1.5
HP
MP
1.0
0.5
0.0
-0.5
LP
-1.0
-1.5
MP
0 20 40 60 80 100 120 140 160 180 200
TIME (ns)
Figure 27. Pulse Response at 5 V
18
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7 Detailed Description
7.1 Overview
The LMP8350 is a fully-differential voltage feedback amplifier designed to drive precision differential ADC
converters. The LMP8350, though fully integrated for ultimate balance and distortion performance, functionally
provides three channels. Two of these channels are the V+ and V− signal path channels, which function similarly
to inverting mode operational amplifiers and are the primary signal paths.
The third channel is the common-mode (VOCM) feedback circuit. This is the circuit that sets the output common
mode as well as driving the V+ and V− outputs to be equal magnitude and opposite phase, even when only one
of the two input channels is driven. The common-mode feedback circuit allows for single-ended to differential
operation. The output common-mode voltage is set by applying the appropriate voltage to the VOCM pin.
7.2 Functional Block Diagram
V+ EN
IN+
Vocm
IN-
+
Vocm
OUT+
OUT-
V-
7.3 Feature Description
7.3.1 Full Bandwidth Limitations
Although the LMP8350 has a unity gain bandwidth of over 200 MHz, it is primarily intended for lower sample
rate, high-precision ADCs with baseband analog input signal bandwidths in the DC to <1 MHz range (not to be
confused with sampling rate). The high open-loop bandwidth of the LMP8350 is used to provide ultra low
distortion and fast settling times. Maximum power bandwidth is limited by the internal output common-mode
feedback path, which is limited to 1 MHz to 5 MHz. Operation with input signals above 1 MHz with near full
output swings can cause random shifts in the output common mode and possible AC instabilities. For this
reason, the LMP8350 is not intended to be used wide bandwidth (> 1 MHz) signal paths. Single-ended inputs
rely on the common-mode signal path and will have a bandwidth limited to that of the internal common-mode
buffer.
7.3.2 ESD Protection
The LMP8350 is protected against electrostatic discharge (ESD) on all pins. The LMP8350 will survive 2000-V
human body model and 200-V machine model events. Under normal operation, the ESD diodes have no effect
on circuit performance. There are occasions, however, when the ESD diodes will be evident. If the LMP8350 is
driven by a large signal while the device is powered down the ESD diodes will conduct. The current that flows
through the ESD diodes will either exit the chip through the supply pins or will flow through the device, hence it is
possible to power up a chip with a large signal applied to the input pins. Using the shutdown mode is one way to
conserve power and still prevent unexpected operation.
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7.4 Device Functional Modes
7.4.1 Enable Pin and Power Mode Selection
The LMP8350 is equipped with a four-level enable (EN) pin to select one of three power modes or shutdown.
These modes are selected by applying the appropriate voltage to the EN pin.
Each power level has a corresponding performance level. The high power mode will have the best overall BW
and distortion performance, but at the cost of higher supply current and some DC accuracy. The low power mode
has the lowest supply current, but with a noticeable loss of AC performance and output drive capabilities. The
mid-power mode provides the best balance of AC and precision DC specifications. In disable mode, the amplifier
is shutdown and the output stage goes into a high impedance state. Table 1 summarizes these performance
trade-offs.
Table 1. Performance vs. Power Mode Summary
MODE
High
Med
Low
VS
–3dB BW
(MHz)
HD2
(dBc)
NOISE
(nV/Hz)
SR
(V/µS)
TYP VOS
(mV)
10
118
–124.7
4.6
507
0.6
6.6
116
–124.7
4.5
488
0.3
5
114
–125.5
4.5
476
0.2
10
87
–122.8
4.8
393
0.08
6.6
85
–122.8
4.8
376
0.1
5
84
–122.6
4.8
366
0.1
10
31
–117.2
8
178
0.1
6.6
29
–117.2
8
166
0.1
5
28
–117
8
160
0.1
To set the mode, internally the voltage at the EN pin is compared against the total supply voltage (VS) and sets
the current consumption as shown in the table below. The EN pin voltage is referenced to the V- pin.
Table 2. Enable Pin Mode Selection
VEN
(VS = V+ - V-)
POWER
MODE
VEN AT 10 V
VEN AT 6.6 V
VEN AT 5 V
IS
mA
7/8 × VS
High
8.75
5.775
4.375
13 to 15
5/8 × VS
Med
6.25
4.125
3.125
7 to 9
3/8 × VS
Low
3.75
2.475
1.875
2 to 3
1/8 × VS
Disable
1.25
0.825
0.625
<1
The enable pin should not be allowed to float. If the enable pin is not used it can be tied to V+ to select the high
power mode or set with two resistors.
Each power setting has a ±400-mV tolerance at each level, though TI recommends to keep the set voltage within
the center of the range as performance may vary near the transition zones.
During shutdown, both outputs are in a high impedance state, so the feedback and gain set resistors will then set
the input and output impedance of the circuit. For this reason input to output isolation will be poor in the disabled
state.
The voltage at the EN pin can be generated with a resistive voltage divider or a buffer connected to a voltage
source or a DAC. Figure 34 shows how to generate EN voltage with a resistive voltage divider.
20
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Values of RA and RB can be calculated to achieve the voltages in Table 2, however their sum should be below
50 kΩ to keep the voltage at the enable pin stable. Recommended values for RA and RB are given in Table 3.
Table 3. Recommended RA and RB for Mode Selection
MODE
10 V
6.6 V
5V
VEN
High Power
RA = 0
RB = inf
RA = 0
RB = inf
RA = 0
RB = inf
> 7/8 VS
Mid Power
RA = 18 K
RB = 30 K
RA = 18 K
RB = 30 K
RA = 18 K
RB = 30 K
5/8 VS
Low Power
RA = 33 K
RB = 18 K
RA = 33 K
RB = 18 K
RA = 33 K
RB = 18 K
3/8 VS
Shutdown
RA = Inf
RB = 0
RA = Inf
RB = 0
RA = Inf
RB = 0
< 1/8 VS
7.4.2 VOCM Pin and Output Common-Mode Setting
Output common-mode voltage is set by the VOCM pin. Both outputs will be offset in the same direction (phase) by
an amount equal to the applied VOCM voltage.
The VOCM pin, if left unconnected, will self-bias to mid-supply. Two internal 60-kΩ resistors set this midpoint.
These resistors are shown in Figure 28.
+
V
60 k:
Internal
Circuitry
VOCM
Input
60 k:
V
-
Figure 28. VOCM Internal Bias Circuit
The equivalent resistance looking into the VOCM pin will look like 30 kΩ to mid-supply, plus about ±700 nA for
internal base currents (which scales with power mode and supply current). If left floating, the VOCM input should
be bypassed to ground with a 0.1-µF ceramic capacitor.
If a different output common-mode voltage is desired, the VOCM pin should be driven by a clean, low impedance
source to override the internal divider resistors. The VOCM pin should be bypassed to ground with a 0.1-µF
ceramic capacitor. It should be noted that any signal or noise-coupling into the VOCM will be passed as commonmode noise and may result in the loss of dynamic range, degraded CMRR, degraded balance and higher
distortion. The VOCM pin is primarily intended as a DC bias path and is not intended for use as a signal path.
For applications that can tolerate slight shifts in the VOCMvoltage over temperature, it is also possible to use a
single resistor to program the VOCM voltage by paralleling one of the internal resistors to change the ratio.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Fully-Differential Operation
The LMP8350 will perform best when used with split supplies and in a fully-differential configuration. See
Figure 29 for recommend circuits.
RF1
RO
RG1
+
VI
a
CL
VOCM
RL
VO
RG2
RO
RF2
EN
Figure 29. Typical Fully-Differential Application
The circuit shown in Figure 29 is a typical fully-differential application as might be used to drive a Sigma Delta
ADC. In this circuit, closed-loop gain is calculated by Equation 1:
(AV) = VOUT/ VIN = RF/RG
where
•
RF=RF1=RF2 and RG=RG1=RG2
(1)
For all the applications in this data sheet , VIN is presumed to be the voltage presented to the circuit by the signal
source. For differential signals this will be the difference of the signals on each input (which will be double the
magnitude of each individual signal), while in single-ended inputs it will just be the driven input signal.
When fed with a differential signal, the LMP8350 provides excellent distortion, balance and common-mode
rejection, provided the resistors RF, RG and any input termination resistors (RT) are well-matched and strict
symmetry is observed in board layout. With a DC CMRR of over 80 dB, the DC and low frequency CMRR of
most circuits will be dominated by the external resistor matching and board trace resistance. At low distortion
levels, board layout symmetry and supply bypassing become a factor as well. It is assumed throughout this
document that RF1 = RF2 and RG1 = RG2 for maximum channel symmetry
Precision resistors of at least 0.1% accuracy or better are recommended and careful board layout will also be
required for optimum performance.
Operation with RF feedback resistors as low as 300 Ω is possible in the high and medium power modes. This will
slightly improve the noise and bandwidth results. However, feedback resistors with RF values of less than 1 KΩ
should be avoided in the low power mode due to the reduced output drive current capabilities. If low value
resistors (< 300 Ω) must be used in the low power mode, the maximum output swing will need to be limited.
The resistors RO help keep the amplifier stable when presented with a load CL, as is common when driving an
analog to digital converter (ADC).
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Application Information (continued)
1000
100:
TWISTED PAIR
50:
500
+
2 VPP
a
VOCM
500
2 VPP
50:
1000
GAIN = 2
EN
Figure 30. Fully-Differential Cable Driver
With up to 15 VPP differential output voltage swing and 80 mA of linear drive current, the LMP8350 makes an
excellent precision cable driver as shown in Figure 30. The LMP8350 is also suitable for driving differential
cables from a single-ended source.
8.1.2 Single Supply Operation
As shown in Figure 31, the input common-mode voltage is less than the output common voltage. It is set by
current flowing through the feedback network from the device output. The input common-mode voltage range
places constraints on gain settings. The input common-mode voltage is calculated in Equation 2. Possible
solutions to this limitation include AC coupling the input signal, using split power supplies and limiting stage gain.
AC coupling with single-supply is shown in Figure 32.
VICM= Input common-mode voltage = (V+IN + V−IN)/2.
(2)
RF
RO
VO1
RG
RS
VI1
+
VI
a
CL
VOCM
RT
RL
VO
RG
VI2
VO2
RM
RO
RF
EN
*VCM =
VO1 + VO2
2
*BY DESIGN
VICM = VOCM *
(RG + RM)
(RG + RM + RF)
=a
VOCM
1 + AV
WHERE RM << RG
Figure 31. Relating AV to Input/Output Common-Mode Voltages
In Figure 31 the differential closed loop gain is = AV= RF/RG.
NOTE
In single-ended to differential operation VIN is measured single ended while VOUT is
measured differentially. This means that gain is really one-half, or 6 dB, less when
measured on either of the output pins separately.
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Application Information (continued)
RF
RO
VO1
VI1
RG
RS
+
VI
a
RT
RL
CL
VOCM
VO
RG
VI2
RM
VO2
RO
RF
EN
*VCM =
VICM = VOCM
VO1 + VO2
2
*BY DESIGN
VICM =
VI1 + VI2
2
Figure 32. AC Coupled for Single-Supply Operation
8.1.3 Driving Analog to Digital Converters
Analog to digital converters (ADC) present challenging load conditions. They typically have high impedance
inputs with large and often variable capacitive components. As well, there are usually current spikes associated
with switched capacitor or sample and hold circuits. Figure 33 shows a typical circuit for driving an ADC. The two
resistors serve to isolate the capacitive loading of the ADC from the amplifier and ensure stability. In addition, the
resistors form part of a lowpass filter which helps to provide anti alias and noise reduction functions. The CS
capacitor helps to smooth the current spikes associated with the internal switching circuits of the ADC and also
are a key component in the lowpass filtering of the ADC input. The capacitor should be a low distortion capacitor,
such as an NPO, to avoid causing significant distortion terms. In the circuit of Figure 33, the cutoff frequency of
the filter is calculated by Equation 3. This should be slightly less than the sampling frequency.
1 / (2 × π × (RISO1 + RISO2) × (CS + CCONVERTER))
(3)
NOTE
The ADC input capacitance must be factored into the frequency response of the input
filter. Also as shown in Figure 33, the input capacitance to many ADCs is variable based
on the clock cycle. For lower-speed, precision ADC's, the external cap is generally sized
to ten times the internal sampling capacitor value. See the data sheet for your particular
ADC for details.
RF1
RISO1
RG1
+
VI
a
VOCM
CS
-
A/D
8-18 pF
RG2
RISO2
RF2
VREF
EN
LOW IMPEDANCE
VOLTAGE REFERENCE
Figure 33. Driving an ADC
24
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Application Information (continued)
The amplifier and ADC muist be located as close together as possible. Both devices require that the filter
components be in close proximity to them. The amplifier needs to have minimal parasitic loading on the output
traces, and the ADC is sensitive to high-frequency noise that may couple in on its input lines. Some high
performance ADCs have an input stage that has a bandwidth of several times its sample rate. The sampling
process results in all input signals presented to the input stage mixing down into the Nyquist range (DC to Fs/2).
See AN-236 (SNAA079) for more details on the subsampling process and the requirements this imposes on the
filtering necessary in your system.
8.1.4 Capacitive Drive
As noted in the Driving Analog to Digital Converters section, capacitive loads should be isolated from the
amplifier output with small valued resistors. This is particularly the case when the load has a resistive component
that is 500 Ω or higher. A typical ADC has capacitive components of around 8 to 18 pF, and the resistive
component could be 1000 Ω or higher. If driving a transmission line, such as a twisted pair, using matching
resistors will be sufficient to isolate any subsequent capacitance.
8.2 Typical Application
Figure 34 shows a typical application where an LMP8350 is used to produce a differential signal from a singleended source.
RF
RO
RG
RS
VI
+
a
RT
RL
CL
VOCM
VO
RG
RM
RO
RF
EN
SET RM = RT||RS
1
-
1
RIN
§
¨¨
©
§ 1
¨
© RS
RIN =
RG
RF
§
1- ¨
2
*
(R
F + RG)
©
§
¨¨
©
SET RT =
Figure 34. Single-Ended in Differential Out
8.2.1 Design Requirements
Compared to a differential input, using a single-ended input will reduce gain by 1/2, so that the closed-loop gain
will be calculated by Equation 4:
Gain = Av = 0.5 × RF / RG
(4)
In single-ended input operation the output common-mode voltage is set by the VOCM pin. Also, In this mode the
common-mode feedback circuit must recreate the signal that is not present on the unused differential input pin.
The common-mode feedback circuit is responsible for ensuring balanced output with a single-ended input.
Balance error is defined as the amount of input signal that couples into the output common mode. It is measured
as the undesired output common-mode swing divided by the signal on the input. Balance error can be caused by
either a channel to channel gain error, or phase error. Either condition will produce a common-mode shift. The
overall bandwidth is limited due to the VOCM buffer bandwidth limitations in this configuration.
Supply and VOCM pin bypassing are also critical in this mode of operation.
8.2.2 Detailed Design Procedure
For a single-ended input differential output configuration Figure 34, component value selection is dictated by the
gain and input resistance desired. Figure 35 shows the OUT+ and OUT– relative to the single ended voltage
signal input +. Depending on the feedback resistor values, the amplitude gain of the OUT+ and OUT– will vary.
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Typical Application (continued)
8.2.3 Application Curve
Voltage
VA
OUT+
OUTV+
VIN
0
Time
-VIN
-VA
Figure 35. Single-Ended In Differential Out Amplitude vs Time Waveform
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9 Power Supply Recommendations
9.1 Power Supply and VOCM Bypassing
The LMP8350 requires supply bypassing capacitors as shown in Figure 36 and Figure 37 for fastest settling time
and overall stability.
+
V
0.01 PF
10 PF
+
VOCM
0.1 PF
0.1 PF
0.01 PF
10 PF
V
-
Figure 36. Split-Supply Bypassing Capacitors
The 0.01-µF and 0.1-µF capacitors should be leadless surface mount (SMT) ceramic capacitors and should be
no more than 3 mm from the supply pins. The SMT capacitors should be connected directly to a ground plane.
Thin traces or small vias will reduce the effectiveness of bypass capacitors.
V
+
0.01 PF
0.1 PF
10 PF
+
VOCM
0.1 PF
Figure 37. Single-Supply Bypassing Capacitors
Also shown in Figure 36 and Figure 37 is a capacitor from the VOCM pin to ground. The VOCM pin sets the output
common-mode voltage. Any noise on this input is transferred directly to the output. The VOCM pin should be
bypassed even if the pin in not used. There is an internal resistive divider on chip to set the output commonmode voltage to the midpoint of the supply pins. The impedance looking into this pin is approximately 30 kΩ. If a
different output common-mode voltage is desired drive this pin with a clean, accurate voltage reference.
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10 Layout
10.1 Layout Guidelines
While the main signal path frequencies may be fairly low, the ultra low distortion and settling time specifications
rely on wide internal bandwidths. Precautions usually taken for high-speed amplifiers should be followed to
maintain the best settling times and lowest distortion specifications. In order to get maximum benefit from the
differential circuit architecture, board layout and component selection is very critical. The circuit board should
have low a inductance ground plane and well bypassed broad supply lines. External components should be
leadless surface mount types. The feedback network and output matching resistors should be composed of short
traces and precision resistors (0.1%). The output matching resistors should be placed within 3-4 mm of the
amplifier as should the supply bypass capacitors.
The LMP8350 is sensitive to parasitic capacitances on the outputs. Ground and power plane metal should be
removed from beneath the amplifier and from beneath RF and RG.
With any differential signal path symmetry is very important. Even small amounts of asymmetry will contribute to
distortion and balance errors. Special attention should be paid to where the bypass capacitors are grounded, as
this also affects settling and distortion performance.
The LMH730154 evaluation board is an example of good layout techniques. Evaluation boards are available for
purchase through the product folder on TI’s website.
10.2 Layout Example
2
VOUT-
2
GND
2
GND
1
VSS
1
VSS
2
VSS
1
VCC
1
+
1
-
2
VOUT+
5
VOUT-
4
VOUT+
6
VSS
3
VCC
7
VCC
2
8
+
1
-
2
GND
1
VCC
1
VCC
2
GND
2
+
1
VI NP
1
VINN
2
-
Figure 38. Layout Example
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10.3 Power Dissipation
The LMP8350 is optimized for maximum performance in the small form factor of the standard SOIC package,
and is essentially a dual-channel amplifier. To ensure maximum output drive and highest performance, thermal
shutdown is not provided. Therefore, it is of utmost importance to make sure that the TJMAX of 150°C is never
exceeded due to the overall power dissipation.
Follow these steps to determine the Maximum power dissipation for the LMP8350:
1. Calculate the quiescent (no-load) power using Equation 5 (Be sure to include any current through the
feedback network if VOCM is not mid-rail.):
PAMP = ICC× (VS)
where
VS = V+ – V−.
•
(5)
2. Calculate the RMS power dissipated in each of the output stages using Equation 6:
PD (rms) = rms ((VS – V+OUT) × I+OUT) + rms ((VS − V−OUT) × I−OUT)
where
•
VOUT and IOUT are the voltage and the current measured at the output pins of the differential amplifier as if they
were single ended amplifiers and VS is the total supply voltage.
(6)
3. Calculate the total RMS power: PT = PAMP + PD.
The maximum power that the LMP8350 package can dissipate at a given temperature can be derived from
Equation 7:
PMAX = (150° – TAMB)/ θJA
where
•
•
TAMB = Ambient temperature (°C)
and θJA = Thermal resistance, from junction to ambient, for a given package (°C/W). For the SOIC package θJA
is 150°C/W.
(7)
NOTE
If VOCM is not 0 V then there will be quiescent current flowing in the feedback network.
This current should be included in the thermal calculations and added into the quiescent
power dissipation of the amplifier.
10.4 Evaluation Board
Generally, a good high-frequency layout will keep power supply and ground traces away from the inverting input
and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and
possible circuit oscillations (see Application Note OA-15 (SNOA367) for more information). Texas Instruments
suggests the following evaluation boards in Table 4 as a guide for high-frequency layout and as an aid in device
testing and characterization:
Table 4. Evaluation Board Guide
DEVICE
PACKAGE
EVALUATION BOARD
PART NUMBER
LMP8350MA
SOIC
LMH730154
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
• Absolute Maximum Ratings for Soldering, SNOA549
• AN-236 An Introduction to the Sampling Theorem, SNAA079
• OA-15 Frequent Faux Pas in Applying Wideband Current Feedback Amplifiers, SNOA367
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
LMP, E2E are trademarks of Texas Instruments.
PowerWise is a trademark of National Semiconductor Corporation.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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18-Sep-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMP8350MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMP83
50MA
LMP8350MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMP83
50MA
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
18-Sep-2015
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
18-Sep-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LMP8350MAX/NOPB
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.5
B0
(mm)
K0
(mm)
P1
(mm)
5.4
2.0
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
18-Sep-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMP8350MAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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