ETC2 FCX617TA Sot89 npn silicon power (switching) transistor Datasheet

SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
FCX617
ISSSUE 1 - NOVEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
*
*
*
12A Peak Pulse Current
Excellent HFE Characteristics up to 12 Amps
Extremely Low Saturation Voltage E.g. 8mv Typ.
Extremely Low Equivalent On-resistance;
RCE(sat) 50mΩ at 3A
C
E
C
Partmarking Detail -
B
617
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
15
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current **
ICM
12
A
Continuous Collector Current
IC
3
A
Base Current
IB
500
mA
Power Dissipation at Tamb=25°C
Ptot
1 †
2 ‡
W
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
† recommended Ptot calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX617
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
TYP.
MAX.
UNIT
CONDITIONS.
15
V
IC=100µA
V(BR)CEO
15
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µA
Collector Cut-Off
Current
ICBO
0.3
100
nA
VCB=10V
Emitter Cut-Off
Current
IEBO
0.3
100
nA
VEB=4V
Collector Emitter
Cut-Off Current
ICES
0.3
100
nA
VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
150
14
100
230
300
400
mV
mV
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
IC=4A, IB=50mA*
IC=5A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.89
1.0
V
IC=3A, IB=50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
0.82
1.0
V
IC=3A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
200
300
200
150
415
450
320
240
80
Transition
Frequency
fT
80
120
Output Capacitance
Cobo
30
Turn-On Time
t(on)
Turn-Off Time
t(off)
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
MHz
IC=50mA, VCE=10V
f=50MHz
pF
VCB=10V, f=1MHz
120
ns
160
ns
VCC=10V, IC=3A
IB1=IB2=50mA
40
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FCX617
TYPICAL CHARACTERISTICS
1
0.4
+25 °C
IC/IB=60
0.3
100m
0.2
100°C
25°C
10m
IC/IB=100
IC/IB=60
IC/IB=10
1m
1m
-55°C
0.1
0.0
10m
1
100m
10
1mA
10mA
1.0
1.4
VCE=2V
10A
450
25°C
10A
100A
IC/IB=60
1.2
1.0
0.8
-55°C
0.8
0.6
10A
VCE(SAT) vs IC
VCE(SAT) v IC
100°C
1A
Collector Current
IC - Collector Current (A)
1.2
100mA
25°C
-55°C
225
0.4
0.6
100°C
0.4
0.2
0.2
0.0
0
1mA
10mA
100mA
1A
10A
100A
0.0
1mA
Collector Current
1A
Collector Current
hFE vs IC
1.4
100mA
10mA
VBE(SAT) vs IC
100
VCE=2V
1.2
1.0
0.8
10
-55°C
25°C
0.6
100°C
1
0.4
0.2
0.0
1mA
10mA
100mA
1A
Collector Current
VBE(ON) vs IC
10A
100A
0.1
100m
DC
1s
100ms
10ms
1ms
100us
1
10
VCE (VOLTS)
Safe Operating Area
100
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