PD - 97368A IRFH3702PbF HEXFET® Power MOSFET Applications l l l Synchronous Buck Converter for Computer Processor Power Isolated DC to DC Converters for Network and Telecom Buck Converters for Set-Top Boxes VDSS 30V RDS(on) max Qg 7.1mΩ@VGS = 10V 9.6nC Benefits l l l l l l l Low RDS(ON) Very Low Gate Charge Low Junction to PCB Thermal Resistance Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) S S S D D G D D 3mm x 3mm PQFN Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42 ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Package Limited) 25 120 PD @TA = 25°C Power Dissipation 2.8 PD @TA = 70°C Power Dissipation 1.8 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Pulsed Drain Current Units V 16 c A W 0.02 -55 to + 150 W/°C °C Thermal Resistance f RθJC Junction-to-Case RθJA Junction-to-Ambient RθJA Parameter gh Junction-to-Ambient (t<10s) h Typ. Max. ––– 6.0 ––– 45 ––– 44 Units °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 09/21/10 IRFH3702PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ Min. Typ. Max. Units 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.02 5.7 Gate Threshold Voltage ––– 1.35 8.7 1.8 IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -6.5 ––– IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– Gate-to-Source Reverse Leakage Forward Transconductance ––– 37 ––– ––– V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 16A mΩ 11.8 VGS = 4.5V, ID = 12A 2.35 V VDS = VGS, ID = 25µA ––– mV/°C VDS = 24V, VGS = 0V 1.0 µA 150 VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 15V, ID = 12A Total Gate Charge Pre-Vth Gate-to-Source Charge ––– ––– 9.6 2.4 14 ––– Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 1.2 3.1 ––– ––– Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 2.9 4.3 ––– ––– Qoss Output Charge ––– 7.4 ––– nC RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 2.2 9.6 ––– ––– Ω tr td(off) Rise Time Turn-Off Delay Time ––– ––– 15 11 ––– ––– tf Ciss Fall Time Input Capacitance ––– ––– 5.8 1510 ––– ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 306 120 ––– ––– RDS(on) VGS(th) ∆VGS(th) gfs Qg Qgs1 Qgs2 Qgd V Conditions Drain-to-Source Breakdown Voltage VGS = 0V, ID = 250µA ––– 7.1 e e VDS = 15V nC VGS = 4.5V ID = 12A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns ID = 12A RG=1.8Ω See Fig.15 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current c Units mJ A Max. 77 12 Typ. ––– ––– d Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time 2 c Min. Typ. Max. Units ––– ––– Conditions MOSFET symbol 3.5 A ––– ––– 120 ––– ––– ––– 17 1.0 26 V ns ––– 15 23 nC D showing the integral reverse G S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 15V di/dt = 225A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFH3702PbF 1000 1000 TOP ID, Drain-to-Source Current (A) Tj = 25°C 100 BOTTOM ≤60µs PULSE WIDTH VGS 10V 5.0V 4.5V 3.5V 3.3V 3.1V 2.9V 2.7V Tj = 150°C ID, Drain-to-Source Current (A) ≤60µs PULSE WIDTH TOP 100 10 BOTTOM 10 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.1V 2.9V 2.7V 2.7V 2.7V 1 1 0.1 1 10 0.1 100 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 ID = 16A VGS = 10V 1.5 1.0 0.5 1 2 3 4 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRFH3702PbF 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 12A C, Capacitance (pF) C oss = C ds + C gd 10000 Ciss 1000 Coss 12.0 VDS= 24V VDS= 15V 10.0 8.0 6.0 4.0 2.0 Crss 100 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 15 20 25 30 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C 10 T J = 25°C 1 100µsec 10msec 10 1msec 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 5 1.2 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFH3702PbF 16 2.5 VGS(th) , Gate Threshold Voltage (V) ID, Drain Current (A) 14 12 10 8 6 4 2 0 2.0 ID = 25µA 1.5 1.0 0.5 25 50 75 100 125 150 -75 -50 -25 T A , Ambient Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( Z thJA ) °C/W 100 10 D = 0.50 0.20 0.10 0.05 1 0.02 0.01 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + TA SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 20 350 ID = 16A 18 16 14 12 10 T J = 125°C 8 TJ = 25°C 6 4 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH3702PbF ID TOP 1.7A 2.6A BOTTOM 12A 300 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 18 20 25 50 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage V DS V GS VDS + V - DD IAS 20V 125 150 RD D.U.T. RG DRIVER D.U.T RG 100 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V L 75 Starting T J , Junction Temperature (°C) + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 14b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRFH3702PbF D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com Fig 18. Gate Charge Waveform 7 IRFH3702PbF PQFN Package Details Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRFH3702PbF PQFN Part Marking PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRFH3702PbF Orderable part number Package Type IRFH3702TRPBF PQFN 3mm x 3mm Standard Pack Form Quantity Tape and Reel 4000 Note Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F PQFN 3mm x 3mm †† ††† guidelines ) MS L1 ††† (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.0mH, RG = 25Ω, IAS = 12A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rthjc is guaranteed by design. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Refer to application note #AN-994. Data and specifications subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2010 10 www.irf.com