ALD ALD310708A Precision p-channel epad mosfet array quad enhanced mode matched pair Datasheet

e
ADVANCED
LINEAR
DEVICES, INC.
TM
EPAD
EN
®
AB
LE
D
ALD310708A/ALD310708
PRECISION P-CHANNEL
EPAD®
MOSFET ARRAY
VGS(th)= -0.80V
QUAD ENHANCED MODE MATCHED PAIR
APPLICATIONS
GENERAL DESCRIPTION
ALD310708A/ALD310708 high precision monolithic quad P-Channel
MOSFET arrays are matched at the factory using ALD's proven EPAD®
CMOS technology. This device is available in a quad version and is a
member of the EPAD ® Matched Pair MOSFET Family. The
ALD310708A/ALD310708 is a P-channel version of the popular
ALD110808A/ALD110808 Precision Threshold device. Together, these
two MOSFET series enable complementary precision N-Channel and PChannel MOSFET array based circuits.
Intended for low voltage and low power small signal applications, the
ALD310708A/ALD310708 features precision -0.80V Gate Threshold
Voltage, which enables circuit designs with very low operating voltages
such as 2V power supplies where the circuits operate below the
threshold voltage of the ALD310708A/ALD310708. This feature also
enhances input/output signal operating ranges, especially in very low
operating voltage environments. With these low threshold precision
devices, a circuit with multiple cascading stages can be constructed to
operate at extremely low supply or bias voltage levels. ALD310708A/
ALD310708 also features high input impedance (2.5 x 1010Ω) and high
DC current gain (>108).
ALD310708A/ALD310708 MOSFETs are designed for exceptional
matching of device electrical characteristics. The Gate Threshold Voltage
VGS(th) is set precisely at -0.80V +/-0.02V, featuring a typical offset
voltage of only +/-0.001V (1mV). As these devices are on the same
monolithic chip, they also exhibit excellent temperature tracking
characteristics. They are versatile design components for a broad range
of precision analog applications such as basic building blocks for current
mirrors, matching circuits, current sources, differential amplifier input
stages, transmission gates, and multiplexers. These devices also excel
in limited operating voltage applications such as very low level precision
voltage-clamps. In addition to matched pair electrical characteristics,
each individual MOSFET exhibits individual well controlled manufacturing
characteristics, enabling the user to depend on tight design limits from
different production batches.
(Continued on next page)
BLOCK DIAGRAM
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0.5% precision current mirrors and current sources
Low Tempco (<= 50ppm/°C) current mirrors/sources
Energy harvesting circuits
Very low voltage analog and digital circuits
Backup battery circuits & power failure detectors
Precision low level voltage-clamps
Low level zero-crossing detector
Source followers and buffers
Precision capacitive probes and sensor interfaces
Precision charge detectors and charge integrators
Discrete differential amplifier input stage
Peak-detectors and level-shifters
High-side switches and Sample-and-Hold switches
Precision current multipliers
Discrete analog switches / multiplexers
Discrete voltage comparators
FEATURES & BENEFITS
• Precision matched Gate Threshold Voltages
• Precision offset voltages (VOS):
ALD310708A: 2mV max.
ALD310708: 10mV max.
• Sub-threshold voltage operation
• Low min. operating voltage of less than 0.8V
• Ultra low min. operating current of less than 1nA
• Nano-power operation
• Wide dynamic operating current ranges
• Exponential operating current ranges
• Matched transconductance and output conductance
• Matched and tracked temperature characteristics
• Tight lot-to-lot parametric control
• Positive, zero, and negative VGS(th) tempco bias currents
• Low input capacitance
• Low input/output leakage currents
PIN CONFIGURATION
ALD310708
V- (5)
DP1 (2)
DP2 (15)
GP1 (3)
~
IC1*
DP4 (6)
DP3 (11)
GP2 (14) GP3 (10)
GP4 (7)
IC1 (1) IC2 (16)
+
SP1 (4) V (12) SP2 (13)
SP3 (9)
V-
V+ (12)
SP4 (8)
V-
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range *
0°C to +70°C
16-Pin SOIC Package
ALD310708ASCL
ALD310708SCL
16-Pin Plastic Dip Package
ALD310708APCL
ALD310708PCL
1
M1
16
IC2*
15
DP2
M2
DP1
2
GP1
3
14
GP2
SP1
4
13
SP2
V-
5
12
V+
DP4
6
11
DP3
GP4
7
10
GP3
SP4
8
9
SP3
M4
M3
SCL, PCL PACKAGES
*IC pins are internally connected, connect to V-
*Contact factory for industrial temp. range or user-specified threshold voltage values.
©2017 Advanced Linear Devices, Inc., Vers. 1.5
www.aldinc.com
1 of 9
GENERAL DESCRIPTION (cont.)
or below the Gate Threshold Voltage (subthreshold region). Second,
the circuit can be biased and operated in the subthreshold region
with nA of bias current and nW of power dissipation.
These devices are built to offer minimum offset voltage and differential
thermal response, and they can also be used for switching and
amplifying applications in -0.80V to -8.0V (+/-0.40V to +/-4.0V)
powered systems where low input bias current, low input capacitance,
and fast switching speed are desired. These devices, exhibiting well
controlled turn-off and sub-threshold characteristics, operate the
same as standard enhancement mode P-Channel MOSFETs.
However, the precision of the Gate Threshold Voltage enable two
key additional characteristics, or operating features. First, the
operating current level varies exponentially with gate bias voltage at
For most general applications, connect the V+ pin to the most
positive voltage and the V- and IC (internally-connected) pins to the
most negative voltage in the system. All other pins must have
voltages within these voltage limits at all times. Standard ESD
protection facilities and procedures for static sensitive devices are
required when handling these devices.
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
-8.0V
Gate-Source voltage, VGS
-8.0V
Operating Current
80mA
Power dissipation
500mW
Operating temperature range SCL, PCL
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25°C unless otherwise specified
ALD310708A
Parameter
Symbol
Min
Gate Threshold
Voltage
VGS(th)
-0.82
Offset Voltage
VOS
Gate Threshold
Temperature
TCVGS(th)
Drain Source On
Current
IDS(ON)
Transconductance
Current2
GFS
Transconductance
Mismatch
Typ
ALD310708
Max
-0.80
-0.78
1
2
Min
Typ
Max
Unit
Test Conditions
-0.82
-0.80
-0.78
V
IDS = -1µA, VDS = -0.1V
2
10
mV
VGS(th)M1 - VGS(th)M2 or
VGS(th)M3 - VGS(th)M4
-2
-2
-1.65
-1.65
570
570
∆GFS
1
1
Output Conductance2
GOS
48
48
Drain Source On
Resistance
RDS(ON)
1.25
1.25
Drain Source On
Resistance Mismatch
∆RDS(ON)
1
1
Drain Source
Breakdown
BVDSX
Drain Source
Leakage Current1
IDS (OFF)
400
400
pA
Gate Leakage Current
IGSS
200
200
pA
Input Capacitance 2
CISS
Notes:
1
2
-8.0
mV/°C
VGS = VDS = -5.0V
µA/V
VGS = VDS = -5.0V
%
VGS = VDS = -5.0V
µA/V
VGS(th) = -4.0V,
VDS = -5.0V
KΩ
VGS = -5.0V,
VDS = -0.1V
%
-8.0
2.5
mA
V
2.5
pF
Consists of junction leakage currents
Sample tested parameters
ALD310708A/ALD310708, Vers. 1.5
Advanced Linear Devices, Inc.
2 of 9
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
-2500
V- = -5.0V
TA = +25°C
-2000
VGS = VGS(th) - 5V
VGS = VGS(th) - 4V
-1500
VGS = VGS(th) - 3V
-1000
VGS = VGS(th) - 2V
-500
VGS = VGS(th) - 1V
-2500
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
OUTPUT CHARACTERISTICS
VGS = VGS(th) - 4V
-25°C
-1500
-45°C
-1000
-3
-2
-1
-4
0
-5
-2
-3
-4
-5
FORWARD TRANSFER CHARACTERISTICS
(SUBTHRESHOLD)
-70
100000
VDS = -0.1V
V+ = 0V
V- = -5V
TA = +25°C
-60
-50
-40
-30
ALD310700
-20
ALD310702
ALD310704
-10
ALD310708
DRAIN SOURCE ON CURRENT
IDS(ON) (nA)
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
FORWARD TRANSFER CHARACTERISTICS
10000
ALD310700
1000
ALD310702
ALD310704
100
ALD310708
10
VDS = -0.1V
V+ = 0V
V- = -5V
TA = +25°C
1
0.1
0.01
0
1.0
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
1.0
-3.0
LOW VOLTAGE OUTPUT
CHARACTERISTICS
-1.0
-1.5
-2.0
-2.5
-3.0
-2V
100
VGS - VGS(th) = -1V
-100
-200
-300
-400
-500
-2500
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
-3V
0
-0.5
DRAIN SOURCE ON CURRENT vs.
GATE AND DRAIN SOURCE VOLTAGE
-5V
-4V
V+ = 0V
V- = -5V
TA = +25°C
0.0
0.5
GATE SOURCE VOLTAGE - VGS (V)
GATE SOURCE VOLTAGE - VGS (V)
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
-1
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
300
+125°C
0
0
200
+85°C
+70°C
-500
0
500
400
+25°C
0°C
-2000
V- = -5V
TA = +25°C
-2000
ALD310700
-1500
ALD310702
-1000
ALD310704
ALD310708
-500
0
-0.5 -0.4 -0.3 -0.2 -0.1
0.0
0.1
0.2
0.3
0.4
0.5
0
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
ALD310708A/ALD310708, Vers. 1.5
Advanced Linear Devices, Inc.
-1
-2
-3
-4
-5
GATE AND DRAIN SOURCE VOLTAGE
VGS = VDS (V)
3 of 9
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
FORWARD TRANSFER CHARACTERISTICS
EXPANDED (SUBTHRESHOLD)
100000
DRAIN SOURCE ON CURRENT
IDS(ON) (nA)
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
100
FORWARD TRANSFER CHARACTERISTICS
FURTHER EXPANDED (SUBTHRESHOLD)
10
1
ALD310700
0.1
ALD310702
ALD310704
0.01
ALD310708
0.001
VDS = -5.0V
V+ = 0V
V- = -5V
TA = +25°C
0.0001
0.00001
VDS = -5V
TA = +25°C
10000
1000
100
10
1
0.1
0.01
0.000001
1.0
0.0
0.5
-0.5
-1.0
-2.0
-1.5
0.6
GATE SOURCE VOLTAGE - VGS (V)
0.4
0.2
0.1
0.0
-0.2
-0.1
GATE THRESHOLD VOLTAGE
vs. V- VOLTAGE
0.2
VDS = -0.1V
V- = -5V
TA = +25°C
-1.5
GATE THRESHOLD VOLTAGE
VGS(th) (V)
-2.0
ALD310708
ALD310704
-1.0
ALD310702
-0.5
ALD310700
0
VDS = -0.1V
V+ = 0V
TA = +25°C
0
h)
0: V GS(t
1070
ALD3
-0.2
h)
2: V GS(t
1070
ALD3
-0.4
00V
= -0.2
)=
: V GS(th
10704
ALD3
0V
= 0.00
V
-0.400
-0.6
-0.8
)=
: V GS(th
10708
ALD3
V
-0.800
-1.0
0
3
2
1
4
5
6
7
0
8
-1
-2
SUBSTRATE BIAS - V+ (V)
-3
-4
-5
-6
-8
-7
V- VOLTAGE (V)
GATE THRESHOLD VOLTAGE vs.
DRAIN SOURCE VOLTAGE
GATE THRESHOLD VOLTAGE
vs. AMBIENT TEMPERATURE
1.0
-1.0
GATE THRESHOLD VOLTAGE
VGS(th) (V)
GATE THRESHOLD VOLTAGE
VGS(th) (V)
0.3
GATE SOURCE OVERDRIVE VOLTAGE
VGS - VGS(th) (V)
GATE THRESHOLD VOLTAGE
vs. SUBSTRATE BIAS
GATE THRESHOLD VOLTAGE
VGS(th) (V)
0.5
V- = -5V
TA = +25°C
0.5
ALD310700
0
ALD310702
ALD310704
-0.5
ALD310708
ALD31070
8
-0.5
ALD31070
4
ALD31070
2
0
ALD31070
0
VDS = -0.1V
V+ = 0V
V- = -5V
0.5
1.0
-1.0
0
-1
-2
-3
-4
-5
-50
DRAIN SOURCE VOLTAGE - VDS (V)
ALD310708A/ALD310708, Vers. 1.5
Advanced Linear Devices, Inc.
-25
0
+25
+50
+75
+100
+125
AMBIENT TEMPERATURE - TA (°C)
4 of 9
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
TRANSCONDUCTANCE vs.
GATE THRESHOLD VOLTAGE
1000
TRANSCONDUCTANCE
GFS (µA/V)
TRANSCONDUCTANCE
GFS (µA/V)
1000
750
VGS = VGS(th) - 4.0V
VDS = -5.0V
500
VGS = VGS(th) - 1.0V
VDS = -5.0V
250
VGS = VGS(th) - 0.5V
VDS = -5.0V
0
-50
750
VGS = VGS(th) - 4.0V
VDS = -5.0V
500
VGS = VGS(th) - 1.0V
VDS = -5.0V
250
VGS = VGS(th) - 0.5V
VDS = -5.0V
0
+25
0
-25
V+ = 0V
V- = -5V
TA = +25°C
+50
+75
+100
0.2
+125
AMBIENT TEMPERATURE - TA (°C)
-0.6
-0.8
-1.0
OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
70
800
OUTPUT CONDUCTANCE
GDS (µA/V)
700
TRANSCONDUCTANCE
GFS (µA/V)
-0.4
GATE THRESHOLD VOLTAGE - VGS(th) (V)
TRANSCONDUCTANCE vs.
GATE SOURCE OVERVOLTAGE
VDS = -0.1V
V+ = 0V
V- = -5V
600
500
400
300
200
100
0
VGS = VGS(th) - 4.0V
VDS = -5.0V
60
50
40
30
VGS = VGS(th) - 1.0V
VDS = -5.0V
20
VGS = VGS(th) - 0.5V
VDS = -5.0V
10
0
1.0
-1.0
0.0
-.2.0
-3.0
-4.0
-5.0
-50
-25
0
+25
+50
+75
+100
+125
GATE SOURCE OVERVOLTAGE - VGS-VGS(th) (V)
AMBIENT TEMPERATURE - TA (°C)
OUTPUT CONDUCTANCE
vs. DRAIN SOURCE ON VOLTAGE
ZERO TEMPERATURE COEFFICIENT (ZTC)
-60
DRAIN SOURCE ON CURRENT
IDS(ON) (µA)
1000
OUTPUT CONDUCTANCE
GDS (µA/V)
-0.2
0
800
VGS(th) - 4.0V
600
400
VGS(th) - 1.0V
200
VGS(th) - 0.5V
-45°C
-50
VDS = -0.1V
V+ = 0V
V- = -5V
-40
0°C
+25°C
-30
-20
+125°C
+85°C
-10
0
0
0
-1
-2
-3
-4
-5
0.4
DRAIN SOURCE ON VOLTAGE - VDS(ON) (V)
ALD310708A/ALD310708, Vers. 1.5
Advanced Linear Devices, Inc.
0.2
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
GATE SOURCE OVERDRIVE VOLTAGE
VGS - VGS(th) (V)
5 of 9
TYPICAL APPLICATIONS
LOW VOLTAGE CURRENT SOURCE MIRROR
LOW VOLTAGE CURRENT SOURCE W/ GATE CONTROL
V+ = +2.0V to +5.0V
V+
M4
M3
ISET
V+ = +2.0V to +5.0V
1/2 ALD310708
1/2 ALD310708
M3
M4
RSET
ISET
I SOURCE
M1
M2
ISOURCE
RSET
Digital Logic Control
of Current Source
ON
ISOURCE = ISET
V+ - Vt
=
RSET
M1
OFF
1/2 ALD1108xx,
1/2 ALD2108xx,
ALD1109xx or
ALD2129xx
M1, M2: N-Channel MOSFET
M3, M4: P-Channel MOSFET
1/4 ALD1108xx,
1/4 ALD2108xx,
1/2 ALD1109xx or
1/2 ALD2129xx
M1
: N-Channel MOSFET
M3, M4: P-Channel MOSFET
LOW VOLTAGE DIFFERENTIAL AMPLIFIER
V+ = +5.0V
1/2 ALD310708
PMOS PAIR
M3
M4
VOUT
M1
M2
NMOS PAIR
VIN+
1/2 ALD1108xx,
1/2 ALD2108xx,
ALD1109xx or
ALD2129xx
VIN-
Current
Source
M1, M2: N-Channel MOSFET
M3, M4: P-Channel MOSFET
0.5% PRECISION LOW VOLTAGE CURRENT SOURCE MULTIPLICATION
V+ = +2.0V to +5.0V
V+ = +2.0V to +5.0V
A
ISET
ISOURCE = ISET . X
RSET
ALD310708
MPSET
MNSET
MN1
MN2
MN3
ALD1108xx or
ALD2108xx
A
MNSET: MN1, MN2..MNX: N-Channel MOSFET
ALD310708A/ALD310708, Vers. 1.5
MP1
MNX
MP2
MP3
MPY
ISOURCE = ISET . X . Y
MPSET: MP1, MP2..MPY: P-Channel MOSFET
Advanced Linear Devices, Inc.
6 of 9
TYPICAL APPLICATIONS (cont.)
0.5% LOW VOLTAGE PRECISION CURRENT MIRRORS
V+ = +2.0V to +5.0V
V+ = +2.0V to +5.0V
RSET
ISET
1/2 ALD310708
ISOURCE
M2
M3
M1
M4
I SOURCE
ISOURCE = ISET =
ISET
1/2 ALD1108xx,
1/2 ALD2108xx,
ALD1109xx or
ALD2129xx
V+ - Vt
RSET
RSET
ISOURCE = ISET =
V+ - Vt
RSET
1.5KΩ < RSET < 5.0MΩ
M1, M2: N-Channel MOSFET
M3, M4: P-Channel MOSFET
0.5% PRECISION LOW VOLTAGE CASCODE CURRENT SOURCES
V+ = +3.0V to +5.0V
MPA1
MPA2
MPB1
MPB2
MPA3
MPA4
ALD310708
MPB3
MPB4
ALD310708
ISET
RSET
ISOURCE
ISOURCE = 3 . ISET = 3
- 2Vt
( VR+SET
)
MPA1...MPA4: ALD310708 P-Channel MOSFET (1st individual pkg)
MPB1...MPB4: ALD310708 P-Channel MOSFET (2nd individual pkg)
0.5% PRECISION LOW TEMPCO CASCODE CURRENT SOURCES
V+ = +3.0V to +5.0V
V+ = +3.0V to +5.0V
ALD310708
ISET
RSET
ISOURCE
M4
M1
M2
M4
M3
M3
M2
M1
ISET
ISOURCE
RSET
ALD1108xx or
ALD2108xx
ISOURCE = ISET =
V+ - 2Vt
RSET
Temperature stable <= 50ppm/°C when ISET = 57µA.
M1, M2, M3, M4: N-Channel MOSFET
ALD310708A/ALD310708, Vers. 1.5
M1, M2, M3, M4: P-Channel MOSFET
Advanced Linear Devices, Inc.
7 of 9
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-16
9.80
10.00
0.385
0.394
E
3.50
4.05
0.140
0.160
1.27 BSC
e
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
A
ø
0°
8°
0°
8°
A1
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD310708A/ALD310708, Vers. 1.5
C
ø
Advanced Linear Devices, Inc.
8 of 9
PDIP-16 PACKAGE DRAWING
16 Pin Plastic DIP Package
E
E1
Millimeters
Dim
D
S
A2
A1
e
b
A
L
Inches
A
Min
3.81
Max
5.08
Min
0.105
Max
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-16
18.93
21.33
0.745
0.840
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
L
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
S-16
0.38
1.52
0.015
0.060
ø
0°
15°
0°
15°
b1
c
e1
ø
ALD310708A/ALD310708, Vers. 1.5
Advanced Linear Devices, Inc.
9 of 9
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