BSC0902NSI MOSFET OptiMOSTMPower-MOSFET,30V SuperSO8 8 Features •OptimizedSyncFETforhighperformancebuckconverter •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 30 V RDS(on),max 2.8 mΩ ID 100 A QOSS 17 nC QG(0V..10V) 24 nC 5 6 2 3 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSC0902NSI PG-TDSON-8 0902NSI - 1) 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 100 65 89 56 23 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 400 A TC=25°C - - 50 A TC=25°C EAS - - 30 mJ ID=40A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 48 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 2.6 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 15 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=10mA IDSS - 2 0.5 - mA VDS=24V,VGS=0V VDS=24V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.0 2.3 3.7 2.8 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG 0.5 0.9 1.8 Ω - Transconductance gfs 50 100 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. 30 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1500 2000 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 630 840 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 88 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 3.9 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 5.4 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 20 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 3.8 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 4.0 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 2.4 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 4.0 - nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 5.6 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 12.2 16.2 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.6 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 24 32 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 9.8 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 17 23 nC VDD=15V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 48 A TC=25°C - 192 A TC=25°C - 0.54 0.7 V VGS=0V,IF=4A,Tj=25°C - 5 - nC VR=15V,IF=4A,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 60 120 50 100 40 80 ID[A] Ptot[W] Diagram1:Powerdissipation 30 60 20 40 10 20 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 2 10 100 µs 0.5 100 0.2 ZthJC[K/W] ID[A] 1 ms 101 10 ms 0.1 0.05 DC 10 -1 0.02 0.01 100 single pulse 10-1 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 6 10 V 5 V 4.5 V 5 4V 300 3.2 V 4 RDS(on)[mΩ] ID[A] 3.5 V 200 3.5 V 4V 4.5 V 5V 3 7V 8V 10 V 2 3.2 V 100 3V 1 2.8 V 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 240 200 320 160 ID[A] gfs[S] 240 120 160 80 80 40 150 °C 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 4 2.0 3 1.5 VGS(th)[V] 2.5 RDS(on)[mΩ] 5 typ 2 1 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C Ciss 103 102 IF[A] C[pF] Coss 101 Crss 102 100 101 0 10 20 30 10-1 0.0 0.2 VDS[V] 0.6 0.8 1.0 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 25 °C 6V 24 V 100 °C 101 8 IAV[A] VGS[V] 125 °C 100 6 4 2 10-1 100 101 102 103 0 0 5 tAV[µs] 10 15 20 25 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Gate charge waveforms 10-2 10-3 125 °C 10-4 IDSS[A] 100 °C 75 °C -5 10 10-6 10-7 25 °C 0 5 10 15 20 25 VDS[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI Figure3OutlineFootprint(TDSON-8) Final Data Sheet 12 Rev.2.3,2016-02-03 OptiMOSTMPower-MOSFET,30V BSC0902NSI RevisionHistory BSC0902NSI Revision:2016-02-03,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2016-02-03 Update Coss max TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.3,2016-02-03