INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for UPS/Inverter Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 90 A IDM Drain Current-Single Pulsed 357 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.2 ℃/W 110 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 30 VGS(th) Gate Threshold Voltage VDS=VGS; ID=100μA 1.2 RDS(on) Drain-Source On-Resistance VGS=10V; ID=90A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT V 2.2 V 2.2 mΩ ±0.2 μA VDS=24V; VGS= 0V 1 μA Is=72A, VGS = 0V 1 V 2 isc & iscsemi is registered trademark