CYStech Electronics Corp. Spec. No. : C272S3 Issued Date : 2002.06.01 Revised Date : 2016.07.14 Page No. : 1/6 General Purpose PNP Digital Transistors (Built-in Resistors) DTA144ES3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTC144ES3 • Pb-free lead plating and halogen-free package Equivalent Circuit Outline DTA144ES3 SOT-323 R1=47kΩ , R2=47 kΩ IN(B) : Base OUT(C) : Collector GND(E) : Emitter Ordering Information Device DTA144ES3-0-T1-X Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name DTA144ES3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C272S3 Issued Date : 2002.06.01 Revised Date : 2016.07.14 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Input Voltage Output Current Symbol Limits Unit VCC VIN IO -50 -40~+10 -30 -100 200 625 -55~+150 -55~+150 V V mA mA mW °C/W °C °C IO(max.) Pd RθJA Tj Tstg Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Electrical Characteristics (Ta=25°C) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) Vo(on) II Io(off) GI R1 R2 / R1 fT Min. -3 68 32.9 0.8 - Typ. -0.1 47 1 250 Max. -0.5 -0.3 -0.18 -0.5 61.1 1.2 - Unit V V V mA μA kΩ MHz Test Conditions VCC=-5V, IO=-100μA VO=-0.3V, IO=-2mA IO/II=-10mA/-0.5mA VI=-5V VCC=-50V, VI=0V VO=-5V, IO=-5mA VCE=-10V, IE=-5mA, f=100MHz* * Transition frequency of the device Recommended Soldering Footprint DTA144ES3 CYStek Product Specification Spec. No. : C272S3 Issued Date : 2002.06.01 Revised Date : 2016.07.14 Page No. : 3/6 CYStech Electronics Corp. Typical Characteristics DC Current Gain vs Output Current Output Voltage vs Output Current 1000 Output Voltage---Vo(on)(mV) Current Gain--- HFE 1000 100 Vo=5V 100 Io/Ii=20 10 10 1 10 Output Current---Io(mA) 1 100 100 10 Output Current ---Io(mA) Input Voltage vs Output Current (ON Characteristics) Output Current vs Input Voltage (OFF Characteristics) 100 Output Current --- Io(mA) Input Voltage --- Vi(on)(V) 10 Vo=0.3V Vcc=5V 10 1 0.1 1 0.1 1 10 Output Current ---Io(mA) 100 0.1 1 10 Input Voltage --- Vi(off)(V) 100 Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 DTA144ES3 50 100 150 Ambient Temperature --- Ta(℃ ) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C272S3 Issued Date : 2002.06.01 Revised Date : 2016.07.14 Page No. : 4/6 Reel Dimension Carrier Tape Dimension DTA144ES3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C272S3 Issued Date : 2002.06.01 Revised Date : 2016.07.14 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTA144ES3 CYStek Product Specification Spec. No. : C272S3 Issued Date : 2002.06.01 Revised Date : 2016.07.14 Page No. : 6/6 CYStech Electronics Corp. SOT-323 Dimension Marking: 3 Q A1 1 C 6C Lp 2 XX A detail Z bp e1 W B e E D A Device Code Z Date Code θ He 0 v A 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 2 mm 1 scale Style: Pin 1.Base 2.Emitter 3.Collector *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0078 0.0157 0.0031 0.0059 0.0709 0.0866 0.0453 0.0531 0.0472 0.0551 DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.20 0.40 0.08 0.15 1.80 2.20 1.15 1.35 1.20 1.40 DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256* 0.0846 0.0965 0.0105 0.0181 0.0051 0.0091 0.0079 0.0079 0° 8° Millimeters Min. Max. 0.65* 2.15 2.45 0.26 0.46 0.13 0.23 0.2 0.2 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTA144ES3 CYStek Product Specification