UTC MMBT5551L-A-AE3-B-R High voltage switching transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
3
* High Collector-Emitter Voltage:
VCEO=160V
* High current gain
1
2
SOT-23
*Pb-free plating product number:MMBT5551L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MMBT5551L-x-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23
(4) x: refer to Classification of hFE
(5) L: Lead Free Plating, Blank: Pb/Sn
MARKING
G1
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
180
V
Collector -Emitter Voltage
VCEO
160
V
Emitter -Base Voltage
VEBO
6
V
DC Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
℃
Operating and Storage Junction Temperature
TJ, TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(note)
SYMBOL
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Current Gain Bandwidth Product
Output Capacitance
fT
Cob
Noise Figure
NF
TEST CONDITIONS
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=120V, IE=0
VBE=4V, IC =0
VCE=5V, IC =1mA
VCE=5V, IC =10mA
VCE=5V, IC =50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC =10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
MIN
180
160
6
TYP
MAX
50
50
80
80
80
100
160
UNIT
V
V
V
nA
nA
400
0.15
0.2
1
1
300
6.0
MHz
pF
8
dB
V
V
Note: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
150-240
C
200-400
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NPN EPITAXIAL SILICON TRANSISTOR
■ TYPICAL CHARACTERICS
Fig.2 DC Current Gain
Fig.1 Collector Output Capacitance
3
10
VCE=5V
8
f=1MHz
IE =0
DC current Gain, h FE
Capacitance, Cob (pF)
10
6
4
10
10
2
1
2
0
10
0
10
0
1
10
2
10
-1
10
Collector-Base Voltage (V)
0
10
10
1
2
10
3
10
Collector Current, Ic (mA)
Fig.3 Base-Emitter on Voltage
Fig.4 Saturation Voltage
3
10
1
10
Saturation Voltage (V)
Collector Current, Ic (mA)
Ic=10*IB
VCE=5V
2
10
1
10
0
10
0.2
0.4
0.6
0.8
1.0
Base-Emitter Voltage (V)
Current Gain-Bandwidth Product, fT (MHz)
-1
10
VCE(SAT )
-2
10
0
VBE(SAT)
0
10
-1
10
0
10
1
10
3
10
2
10
Collector Current, Ic (mA)
Fig.5 Current Gain -Bandwidth
Product
3
10
VCE=10V
2
10
1
10
0
10
0
10
1
10
2
10
3
10
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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