LDMP- SERIES HIGH POWER PULSED LASER DIODES LDMP- series of pulsed laser diodes are MQW structure devices with InGaAsP active layers fabricated using advanced MOCVD epitaxial growth techniques. Devices are designed with pulse width FWHM of 50~100ns and repetition frequency up to 15 KHz. Standard TO9mm package with wavelengths of 905, different emitter sizes and stack layers are available for various applications such as range finder and optical measurement. LDMP-0905 Feature: •High peak output Power: >50W •InGaAsP/InGaAsP MQW Structure by MOCVD Maximum Rating: Peak Reverse Voltage: Vrm 2V Case Temperature: Operating –55°C to +65°C Storage –55°C to +85°C Soldering 5 seconds, +200oC 10.08.2010 ldmp_0905.doc 1 of 3 Specifications (25°C): Symbol LDMP-0905-20WCenter Wavelength Wavelength Tolerance Peak Forward Current Peak Output Power Pulse Width Max. Duty Factor Peak Forward Volage Beam Divergence FWHM Source Size Number of Laser Diode Element Package 10.08.2010 Units 51 LDMP-0905050W-91 LDMP-0905-80W93 905 905 905 ±10 ±10 ±10 If 50 50 50 A Po 20 50 70 W Tw DF Vf 50~100 0.05 40 50~100 0.05 50 50~100 0.05 52 ns % V 10x40 10x40 10x40 370x1 1 400x6 3 370x200 3 TO-5.6mm with 3 pins TO-9mm TO-9mm λo WxH ldmp_0905.doc nm Degree µm pcs. 2 of 3 10.08.2010 ldmp_0905.doc 3 of 3