AP95T10AGR-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
G
BVDSS
100V
RDS(ON)
6mΩ
ID
145A
S
Description
AP95T10A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-262 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current (Chip)
145
A
120
A
90
A
480
A
ID@TC=25℃
Drain Current, VGS @ 10V
ID@TC=100℃
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
277.8
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.45
℃/W
62
℃/W
1
201402121
AP95T10AGR-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
100
-
-
V
VGS=10V, ID=60A
-
-
6
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=60A
-
127
-
S
IDSS
Drain-Source Leakage Current
VDS=100V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
176
280
nC
Qgs
Gate-Source Charge
VDS=80V
-
30
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
80
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
30
-
ns
tr
Rise Time
ID=40A
-
100
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
90
-
ns
tf
Fall Time
VGS=10V
-
100
-
ns
Ciss
Input Capacitance
VGS=0V
-
9090 14550
pF
Coss
Output Capacitance
VDS=25V
-
820
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
440
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
2
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
65
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
170
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T10AGR-HF
600
300
T C = 150 C
400
V GS =6.0V
300
10V
9.0V
8.0V
7.0V
V GS =6.0V
240
ID , Drain Current (A)
500
ID , Drain Current (A)
o
10V
9.0V
8.0V
7.0V
o
T C = 25 C
200
180
120
60
100
0
0
0
4
8
12
16
20
0
24
Fig 1. Typical Output Characteristics
8
12
Fig 2. Typical Output Characteristics
1.6
2.6
I D =1mA
I D =60A
V G =10V
2.2
Normalized RDS(ON)
1.4
Normalized BVDSS
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.2
1
0.8
0.6
1.8
1.4
1.0
0.6
0.4
0.2
-50
0
50
100
150
-50
0
o
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
40
I D =1mA
1.2
T j =150 o C
Normalized VGS(th)
IS(A)
30
T j =25 o C
20
0.8
0.4
10
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T10AGR-HF
f=1.0MHz
12000
I D = 40 A
V DS =80V
10
C iss
8000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
4000
4
2
C oss
C rss
0
0
0
40
80
120
160
200
0
240
20
40
Fig 7. Gate Charge Characteristics
80
100
120
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
1000
Operation in this
area limited by
RDS(ON)
100
100us
ID (A)
60
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
10
1ms
10ms
1
100ms
DC
o
T C =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
300
150
V DS =5V
Limited by package
ID , Drain Current (A)
ID , Drain Current (A)
250
200
150
100
100
50
o
T j =150 C
T j =25 o C
50
T j = -40 o C
0
0
2
4
6
0
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
25
50
75
100
125
150
T C , Case Temperature ( o C )
Fig 12. Drain Current v.s. Case Temperature
4