Single N-channel Trench MOSFET 30V General Description Features The MDV1548 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1548 is suitable device for DC/DC Converter and general purpose applications. D D D D D D D D S S S G G S S S VDS = 30V ID = 28 A @VGS = 10V RDS(ON) < 18.8 mΩ @VGS = 10V < 27.8 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G S PDFN33 Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V o TC=25 C 28 o TC=70 C Continuous Drain Current (1) 22 ID TA=25oC TA=70oC 8.6 Pulsed Drain Current IDM TC=25oC PD o TA=25 C TA=70oC Single Pulse Avalanche Energy 110 22.7 TC=70oC Power Dissipation A 10.7 14.5 W 3.4 2.2 (2) Junction and Storage Temperature Range EAS 20 TJ, Tstg -55~150 Symbol Rating RθJA 36 RθJC 5.5 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jul. 2015. Ver. 1.3 1 Unit o C/W MagnaChip Semiconductor Ltd. MDV1548 – Single N-Channel Trench MOSFET 30V MDV1548 Part Number Temp. Range Package Packing RoHS Status MDV1548URH -55~150oC PDFN33 Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ. Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.9 2.7 - 1 uA nA V Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±100 VGS = 10V, ID = 8A - 16.3 18.8 23.6 27.3 27.8 Drain-Source ON Resistance Forward Transconductance TJ=125oC RDS(ON) gfs VGS = 4.5V, ID = 6A - 23.2 VDS = 5V, ID = 8A - 23 4.5 6.4 8.3 2.0 2.9 3.8 mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss VDD = 15V, ID = 8A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC 1.7 - 0.7 - 283 405 526 13 19 25 Output Capacitance Coss 105 152 197 Turn-On Delay Time td(on) - 5.4 - - 10.6 - - 12.7 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDD = 15.0V, ID = 8A, RG =3.0Ω, tf Rg f=1 MHz Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr pF ns - 3.2 - 1.0 3.2 4.5 - 0.85 1.1 V - 19.5 - ns - 13.1 - nC Ω Drain-Source Body Diode Characteristics IF = 8A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 10A, VDD = 27V, VGS = 10V Jul. 2015. Ver. 1.3 2 MagnaChip Semiconductor Ltd. MDV1548 – Single N-Channel Trench MOSFET 30V Ordering Information 8.0V 6.0V ID, Drain Current [A] 40 Drain-Source On-Resistance [mΩ] VGS = 10V 4.5V 5.0V 30 4.0V 20 10 0.5 1.0 1.5 30 VGS = 4.5V 25 20 VGS = 10V 15 10 5 3.0V 0 0.0 35 2.0 2.5 3.0 3.5 0 4.0 0 10 20 VDS, Drain-Source Voltage [V] 1.8 50 100 ※ Notes : 1. VGS = 10 V 2. ID = 20 A ※ Notes : 90 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.6 30 ID, Drain Current [A] 1.4 1.2 1.0 ID = 8A 80 70 60 50 40 30 20 0.8 10 0 0.6 -50 -25 0 25 50 75 100 125 2 150 3 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 5 6 7 8 9 10 Fig.4 On-Resistance Variation with Gate to Source Voltage 40 10 ※ Notes : ※ Notes : VGS = 0V VDS = 5V IDR, Reverse Drain Current [A] 35 ID, Drain Current [A] 4 VGS, Gate to Source Volatge [V] o 30 25 20 15 10 1 5 0 0 1 2 3 4 0.1 0.0 5 Fig.5 Transfer Characteristics Jul. 2015. Ver. 1.3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDV1548 – Single N-Channel Trench MOSFET 30V 40 50 600 ※ Note : ID = 8A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 15V 500 VGS, Gate-Source Voltage [V] 8 Capacitance [pF] Ciss 6 4 2 400 300 ※ Notes ; 200 Coss 100 Crss 0 0 0 2 4 6 0 8 5 10 QG, Total Gate Charge [nC] 10 3 10 2 25 30 30 ID, Drain Current [A] 10 ms 1 Operation in This Area is Limited by R DS(on) 10 20 Fig.8 Capacitance Characteristics 1 ms 10 15 VDS, Drain-Source Voltage [V] Fig.7 Gate Charge Characteristics ID, Drain Current [A] 1. VGS = 0 V 2. f = 1 MHz 100 ms 1s 10 s DC 0 20 10 Single Pulse TJ=Max Rated TC=25 ℃ 10 -1 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 D=0.5 0 10 0.2 0.1 0.05 -1 0.02 10 0.01 Zθ JC (t), Thermal Response 10 -2 ※ Notes : 10 single pulse Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -3 10 -4 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jul. 2015. Ver. 1.3 4 MagnaChip Semiconductor Ltd. MDV1548 – Single N-Channel Trench MOSFET 30V 10 MDV1548 – Single N-Channel Trench MOSFET 30V Package Dimension PowerDFN33 (3.3x3.3mm) Dimensions are in millimeters, unless otherwise specified (Unit: mm) Jul. 2015. Ver. 1.3 5 MagnaChip Semiconductor Ltd. MDV1548 – Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jul. 2015. Ver. 1.3 6 MagnaChip Semiconductor Ltd.