AMD AM29F016-150FCB 16-megabit (2,097,152 x 8-bit) cmos 5.0 volt-only, sector erase flash memory Datasheet

FINAL
Am29F016
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
■ 5.0 Volt ± 10% for read and write operations
— Minimizes system level power requirements
■ Compatible with JEDEC-standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
■ 48-pin TSOP
■ 44-pin SO
■ Minimum 100,000 write/erase cycles
guaranteed
■ High performance
— 70 ns maximum access time
■ Sector erase architecture
— Uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
Also supports full chip erase
■ Group sector protection
— Hardware method that disables any combination
of sector groups from write or erase operations
(a sector group consists of 4 adjacent sectors of
64 Kbytes each)
■ Embedded Program Algorithms
— Automatically programs and verifies data at
specified address
■ Data Polling and Toggle Bit feature for
detection of program or erase cycle
completion
■ Ready/Busy output (RY/BY)
— Hardware method for detection of program or
erase cycle completion
■ Erase Suspend/Resume
— Supports reading or programming data to a
sector not being erased
■ Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
■ Enhanced power management for standby
mode
— <1 µA typical standby current
— Standard access time from standby mode
■ Hardware RESET pin
— Resets internal state machine to the read mode
■ Embedded Erase Algorithms
— Automatically pre-programs and erases the chip
or any sector
GENERAL DESCRIPTION
The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory
organized as 2 Megabytes of 8 bits each. The 2 Mbytes
of data is divided into 32 sectors of 64 Kbytes for flexible
erase capability. The 8 bits of data appear on DQ0–DQ7.
The Am29F016 is offered in 48-pin TSOP and 44-pin SO
packages. This device is designed to be programmed
in-system with the standard system 5.0 Volt VCC supply.
12.0 Volt V PP is not required for program or erase
operations. The device can also be reprogrammed in
standard EPROM programmers.
The standard Am29F016 offers access times of 70
ns, 90 ns, 120 ns, and 150 ns, allowing high-speed
microprocessors to operate without wait states. To
eliminate bus contention, the device has separate
chip enable (CE), write enable (WE), and output
enable (OE) controls.
The Am29F016 is entirely command set compatible
with the JEDEC single-power supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from 12.0 Volt Flash or EPROM devices.
The Am29F016 is programmed by executing the program command sequence. This will invoke the EmbedPublication# 18805 Rev: D Amendment/0
Issue Date: April 1997
ded Program Algorithm which is an internal algorithm
that automatically times the program pulse widths and
verifies proper cell margin. Erase is accomplished by
executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array
if it is not already programmed before executing the
erase operation. During erase, the device automatically
times the erase pulse widths and verifies proper cell
margin.
This device also features a sector erase architecture.
This allows for sectors of memory to be erased and reprogrammed without affecting the data contents of
other sectors. A sector is typically erased and verified
within one second. The Am29F016 is erased when
shipped from the factory.
The Am29F016 device also features hardware sector
group protection. This feature will disable both program and erase operations in any combination of eight
sector groups of memory. A sector group consists of
four adjacent sectors grouped in the following pattern:
sectors 0–3, 4–7, 8–11, 12–15, 16–19, 20–23, 24–27,
and 28–31.
h i g h e s t l eve l s o f q u a l i t y, r e l i a b i l i t y a n d c o s t
effectiveness. The Am29F016 memory electrically
erases all bits within a sector simultaneously via
Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection.
Flexible Sector-Erase Architecture
■ Thirty two 64 Kbyte sectors
■ Eight sector groups each of which consists of 4
adjacent sectors in the following pattern: sectors
0–3, 4–7, 8–11, 12–15, 16–19, 20–23, 24–27, and
28–31.
■ Individual-sector or multiple-sector erase capability
■ Sector group protection is user-definable
SA31
SA30
SA29
SA28
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
AMD has implemented an Erase Suspend feature that
enables the user to put erase on hold for any period of
time to read data from, or program data to, a sector that
was not being erased. Thus, true background erase
can be achieved.
The device features single 5.0 Volt power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations. A low VCC detector automatically inhibits write operations during power transitions. The end of program or erase is detected by the
RY/BY pin, Data Polling of DQ7, or by the Toggle Bit I
(DQ6).Once the end of a program or erase cycle has
been completed, the device automatically resets to the
readmode.
The Am29F016 also has a hardware RESET pin.
When this pin is driven low, execution of any Embedded Program Algorithm or Embedded Erase Algorithm
will be terminated. The internal state machine will then
be reset into the read mode. The RESET pin may be
tied to the system reset circuitry. Therefore, if a system
reset occurs during the Embedded Program Algorithm
or Embedded Erase Algorithm, the device will be automatically reset to the read mode. This will enable the
system’s microprocessor to read the boot-up firmware
from the Flash memory.
32 Sectors Total
SA3
SA2
SA1
SA0
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
2
Am29F016
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
1FFFFFh
1EFFFFh
1DFFFFh
1CFFFFh
1BFFFFh
1AFFFFh
19FFFFh
18FFFFh
17FFFFh
16FFFFh
15FFFFh
14FFFFh
13FFFFh
12FFFFh
11FFFFh
10FFFFh
1FFFFFh
1EFFFFh
1DFFFFh
1CFFFFh
1BFFFFh
1AFFFFh
09FFFFh
08FFFFh
07FFFFh
06FFFFh
05FFFFh
04FFFFh
03FFFFh
02FFFFh
01FFFFh
00FFFFh
000000h
Sector
Group
7
Sector
Group
0
18805D-1
PRODUCT SELECTOR GUIDE
Family Part No.
VCC = 5.0 Volt ± 5%
Ordering Part No:
-75
VCC = 5.0 Volt ± 10%
-90
-120
-150
Max Access Time (ns)
70
90
120
150
CE (E) Access (ns)
70
90
120
150
OE (G) Access (ns)
40
40
50
75
BLOCK DIAGRAM
DQ0–DQ7
Sector Switches
VCC
VSS
Erase Voltage
Generator
RY/BY
RESET
WE
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE
OE
VCC Detector
Address Latch
STB
Timer
A0–A20
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
18805D-2
Am29F016
3
CONNECTION DIAGRAMS
SO
NC
1
44
VCC
RESET
2
43
CE
A11
3
42
A12
A10
4
41
A13
A9
5
40
A14
A8
6
39
A15
A7
7
38
A16
A6
8
37
A17
A5
9
36
A18
A4
10
35
A19
NC
11
34
NC
NC
12
33
A3
13
32
A20
A2
14
31
NC
A1
15
30
WE
A0
16
29
OE
DQ0
17
28
RY/BY
DQ1
18
27
DQ7
DQ2
19
26
DQ6
DQ3
20
25
DQ5
VSS
21
24
DQ4
VSS
22
23
VCC
NC
18805D-3A
4
Am29F016
CONNECTION DIAGRAMS
NC
NC
A19
A18
A17
A16
A15
A14
A13
A12
CE
VCC
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
NC
NC
A20
NC
WE
OE
RY/BY
DQ7
DQ6
DQ5
DQ4
VCC
VSS
VSS
DQ3
DQ2
DQ1
DQ0
A0
A1
A2
A3
NC
NC
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
Standard TSOP
18805D-3
NC
NC
A20
NC
WE
OE
RY/BY
DQ7
DQ6
DQ5
DQ4
VCC
VSS
VSS
DQ3
DQ2
DQ1
DQ0
A0
A1
A2
A3
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
A19
A18
A17
A16
A15
A14
A13
A12
CE
VCC
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
Reverse TSOP
18805D-4
Am29F016
5
PIN CONFIGURATION
A0–A20
= 21 Addresses
CE
= Chip Enable
LOGIC SYMBOL
21
A0–A20
DQ0–DQ7 = 8 Data Inputs/Outputs
DQ0–DQ7
NC
= Pin Not Connected Internally
OE
= Output Enable
RESET
= Hardware Reset Pin, Active Low
RY/BY
= Ready/BUSY Output
OE (G)
VCC
= +5.0 Volt Single-Power Supply
(±10% for -90, -120, -150) or
(±5% for -95)
WE (W)
VSS
= Device Ground
WE
= Write Enable
6
8
CE (E)
RESET
RY/BY
18805D-5
Am29F016
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of:
AM29F016
-75
E
I
B
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-In
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE TYPE
E = 48-Pin Thin Small Outline Package
(TSOP) Standard Pinout (TS 048)
F = 48-Pin Thin Small Outline Package
(TSOP) Reverse Pinout (TSR048)
S = 44-Pin Small Outline Package (SO 044)
SPEED OPTION
See Product Selector Guide and
Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F016
16 Megabit (2M x 8-Bit) CMOS Flash Memory
5.0 Volt-only Program and Erase
Valid Combinations
AM29F016-75
EC, EI, FC, FI, SC, SI
AM29F016-90
AM29F016-120
AM29F016-150
EC, ECB, EI, EIB,
FC, FCB, FI, FIB,
SC, SCB, SI, SIB
Am29F016
Valid Combinations
Valid Combinations list configurations planned to
be supported in volume for this device. Consult
the local AMD sales office to confirm availability of
specific valid combinations and to check on newly
released combinations.
7
Table 1.
Am29F016 User Bus Operations
CE
OE
WE
A0
A1
A6
A9
DQ0–DQ7
RESET
Autoselect, AMD Manuf. Code (1)
L
L
H
L
L
L
VID
Code
H
Autoselect Device Code (1)
L
L
H
H
L
L
VID
Code
H
Read
L
L
X
A0
A1
A6
A9
DOUT
H
Standby
H
X
X
X
X
X
X
HIGH Z
H
Output Disable
L
H
H
X
X
X
X
HIGH Z
H
Write
L
H
L
A0
A1
A6
A9
DIN
H
Enable Sector Group Protect (2)
L
VID
L
X
X
X
VID
X
H
Verify Sector Group Protect (2)
L
L
H
L
H
L
VID
Code
H
Temporary Sector Group Unprotect
X
X
X
X
X
X
X
X
VID
Hardware Reset/Standby
X
X
X
X
X
X
X
HIGH Z
L
Operation
Legend:
L = logic 0, H = logic 1, X = Don’t Care. See DC Characteristics for voltage levels.
Notes:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 5.
2. Refer to the section on Sector Group Protection.
Read Mode
The Am29F016 has two control functions which must
be satisfied in order to obtain data at the outputs. CE is
the power control and should be used for device selection. OE is the output control and should be used to
gate data to the output pins if the device is selected.
reduced to less than 1 µA. A TTL standby mode is
achieved with CE and RESET pins held at VIH. Under
this condition the current is typically reduced to 200 µA.
The device can be read with standard access time (tCE)
from either of these standby modes.
Address access time (tACC) is equal to the delay from
stable addresses to valid output data. The chip
enable access time (tCE) is the delay from stable
addresses and stable CE to valid data at the output
pins. The output enable access time is the delay from
the falling edge of OE to valid data at the output pins
(assuming the addresses have been stable for at
least tACC–tOE time).
When using the RESET pin only, a CMOS standby
mode is achieved with RESET input held at VSS ± 0.3 V
(CE = don’t care). Under this condition the current is typically reduced to less than 1 µA. A TTL standby mode is
achieved with RESET pin held at VIL (CE = don’t care).
Under this condition the current is typically reduced to
less than 200 µA. Once the RESET pin is taken high,
the device requires 50 ns of wake up time before outputs are valid for read access.
Standby Mode
There are two ways to implement the standby mode on
the Am29F016 device, one using both the CE and
RESET pins; the other via the RESET pin only.
When using both pins, a CMOS standby mode is
achieved with CE and RESET inputs both held at VCC
± 0.3 V. Under this condition the current is typically
8
In the standby mode the outputs are in the high impedance state, independent of the OE input.
Output Disable
With the OE input at a logic high level (VIH), output from
the device is disabled. This will cause the output pins to
be in a high impedance state.
Am29F016
Autoselect
sequence is illustrated in Table 5 (see Autoselect Command Sequence).
The autoselect mode allows the reading of a binary
code from the device and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically
matching the device to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device.
Byte 0 (A0 = VIL) represents the manufacturer’s code
(AMD = 01H) and byte 1 (A0 = VIH) the device identifier
code for Am29F016 = ADH. These two bytes are given
in the table below. All identifiers for manufacturer and
device will exhibit odd parity with DQ7 defined as the
parity bit. In order to read the proper device codes
when executing the Autoselect, A1 must be VIL (see
Table 2).
To activate this mode, the programming equipment
must force VID (11.5 V to 12.5 V) on address pin A9.
Two identifier bytes may then be sequenced from the
device outputs by toggling address A0 from VIL to VIH.
All addresses are don’t cares except A0, A1, and A6
(seeTable 2).
The autoselect mode also facilitates the determination
of sector group protection in the system. By performing
a read operation at the address location XX02H with
the higher order address bits A18, A19, and A20 set to
the desired sector group address, the device will return
01H for a protected sector group and 00H for a
non-protected sector group.
The manufacturer and device codes may also be read
via the command register, for instances when the
Am29F016 is erased or programmed in a system without access to high voltage on the A9 pin. The command
Table 2. Am29F016 Sector Protection Verify Autoselect Codes
Type
A18 to A20
A6
A1
A0
Code
DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
(HEX)
Manufacturer Code–AMD
X
X
X
VIL
VIL
VIL
01H
0
0
0
0
0
0
0
1
Am29F016 Device
X
X
X
VIL
VIL
VIH
ADH
1
0
1
0
1
1
0
1
Sector Group Protection
Sector Group
Address
VIL
VIH
VIL
01H*
0
0
0
0
0
0
0
1
* Outputs 01H at protected sector addresses
Am29F016
9
Table 3.
10
Sector Address Table
A20
A19
A18
A17
A16
Address Range
SA0
0
0
0
0
0
000000h-00FFFFh
SA1
0
0
0
0
1
010000h-01FFFFh
SA2
0
0
0
1
0
020000h-02FFFFh
SA3
0
0
0
1
1
030000h-03FFFFh
SA4
0
0
1
0
0
040000h-04FFFFh
SA5
0
0
1
0
1
050000h-05FFFFh
SA6
0
0
1
1
0
060000h-06FFFFh
SA7
0
0
1
1
1
070000h-07FFFFh
SA8
0
1
0
0
0
080000h-08FFFFh
SA9
0
1
0
0
1
090000h-09FFFFh
SA10
0
1
0
1
0
0A0000h-0AFFFFh
SA11
0
1
0
1
1
0B0000h-0BFFFFh
SA12
0
1
1
0
0
0C0000h-0CFFFFh
SA13
0
1
1
0
1
0D0000h-0DFFFFh
SA14
0
1
1
1
0
0E0000h-0EFFFFh
SA15
0
1
1
1
1
0F0000h-0FFFFFh
SA16
1
0
0
0
0
100000h-10FFFFh
SA17
1
0
0
0
1
110000h-11FFFFh
SA18
1
0
0
1
0
120000h-12FFFFh
SA19
1
0
0
1
1
130000h-13FFFFh
SA20
1
0
1
0
0
140000h-14FFFFh
SA21
1
0
1
0
1
150000h-15FFFFh
SA22
1
0
1
1
0
160000h-16FFFFh
SA23
1
0
1
1
1
170000h-17FFFFh
SA24
1
1
0
0
0
180000h-18FFFFh
SA25
1
1
0
0
1
190000h-19FFFFh
SA26
1
1
0
1
0
1A0000h-1AFFFFh
SA27
1
1
0
1
1
1B0000h-1BFFFFh
SA28
1
1
1
0
0
1C0000h-1CFFFFh
SA29
1
1
1
0
1
1D0000h-1DFFFFh
SA30
1
1
1
1
0
1E0000h-1EFFFFh
SA31
1
1
1
1
1
1F0000h-1FFFFFh
Am29F016
Table 4. Sector Group Addresses
A20
A19
A18
Sectors
SGA0
0
0
0
SA0–SA3
SGA1
0
0
1
SA4–SA7
SGA2
0
1
0
SA8–SA11
SGA3
0
1
1
SA12–SA15
SGA4
1
0
0
SA16–SA19
SGA5
1
0
1
SA20–SA23
SGA6
1
1
0
SA24–SA27
SGA7
1
1
1
SA28–SA31
Write
Device erasure and programming are accomplished
via the command register. The contents of the register
serve as inputs to the internal state machine. The state
machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used
to store the commands, along with the address and
data information needed to execute the command. The
command register is written to by bringing WE to VIL,
while CE is at VIL and OE is at VIH. Addresses are
latched on the falling edge of WE or CE, whichever
happens later; while data is latched on the rising edge
of WE or CE, whichever happens first. Standard microprocessor write timings are used.
Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
Sector Group Protection
The Am29F016 features hardware sector group protection. This feature will disable both program and erase
operations in any combination of eight sector groups of
memory. Each sector group consists of four adjacent
sectors grouped in the following pattern: sectors 0–3,
4–7, 8–11, 12–15, 16–19, 20–23, 24–27, and 28–31
(see Table 4). The sector group protect feature is enabled using programming equipment at the user’s site.
The device is shipped with all sector groups unprotected. Alternatively, AMD may program and protect
sector groups in the factory prior to shipping the device
(AMD’s ExpressFlash™ Service).
It is possible to determine if a sector group is protected
in the system by writing an Autoselect command. Performing a read operation at the address location
XX02H, where the higher order address bits A18, A19,
and A20 is the desired sector group address, will produce a logical “1” at DQ0 for a protected sector group.
See Table 2 for Autoselect codes.
Temporary Sector Group Unprotect
This feature allows temporary unprotection of previously protected sector groups of the Am29F016 device
in order to change data in-system. The Sector Group
Unprotect mode is activated by setting the RESET pin
to high voltage (12V). During this mode, formerly protected sector groups can be programmed or erased by
selecting the sector group addresses. Once the 12 V is
taken away from the RESET pin, all the previously protected sector groups will be protected again. Refer to
Figures 15 and 16.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the
device to the read mode. Table 5 defines the valid
register command sequences. Note that the Erase
Suspend (B0H) and Erase Resume (30H) commands
are valid only while the Sector Erase operation is in
progress. Moreover, both Reset/Read commands are
functionally equivalent, resetting the device to the read
mode.
Am29F016
11
Table 5.
Am29F016 Command Definitions
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Addr
Reset/Read
1
XXXXH
F0H
Reset/Read
3
5555H
AAH
2AAAH
55H
5555H
F0H
RA
RD
Autoselect
3
5555H
AAH
2AAAH
55H
5555H
90H
Byte Program
4
5555H
AAH
2AAAH
55H
5555H
A0H
PA
Data
Chip Erase
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH 2AAAH 55H 5555H
10H
Sector Erase
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH 2AAAH 55H
30H
Erase Suspend
1
XXXXH
B0H
Erase Resume
1
XXXXH
30H
Command
Sequence
Read/Reset
Data
SA
Data
Notes:
1. Bus operations are defined in Table 1.
2. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
SA= Address of the sector to be erased. The combination of A20, A19, A18, A17, and A16 will uniquely select any sector.
3. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.
4. Read and Byte program functions to non-erasing sectors are allowed in the Erase Suspend mode.
5. Address bits A15, A14, A13, A12 and A11 = X, X = don’t care.
Read/Reset Command
The read or reset operation is initiated by writing the
read/reset command sequence into the command register. Microprocessor read cycles retrieve array data
from the memory. The device remains enabled for
reads until the command register contents are altered.
The device will automatically power-up in the read/
reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read
cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content
occurs during the power transition. Refer to the AC
Read Characteristics and Waveforms for the specific
timing parameters.
Autoselect Command
Flash memories are intended for use in applications
where the local CPU can alter memory contents. As
such, manufacture and device codes must be
accessible while the device resides in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However,
multiplexing high voltage onto the address lines is not
generally a desirable system design practice.
The device contains an autoselect command operation
to supplement traditional PROM programming
12
methodology. The operation is initiated by writing the
autoselect command sequence into the command register. Following the command write, a read cycle from
address XX00H retrieves the manufacturer code of
01H. A read cycle from address XX01H returns the device code ADH (see Table 2).
All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit.
Furthermore, the write protect status of sectors can be
read in this mode. Scanning the sector group
addresses (A18, A19, and A20) while (A6, A1, A0) = (0,
1, 0) will produce a logical “1” at device output DQ0 for
a protected sector group.
To terminate the operation, it is necessary to write the
read/reset command sequence into the register.
Byte Programming
The device is programmed on a byte-by-byte basis.
Programming is a four bus cycle operation. There are
two “unlock” write cycles. These are followed by the
program set-up command and data write cycles. Addresses are latched on the falling edge of CE or WE,
whichever happens later and the data is latched on the
rising edge of CE or WE, whichever happens first. The
rising edge of CE or WE (whichever happens first) begins programming using the Embedded Program Algo-
Am29F016
rithm. Upon executing the algorithm, the system is not
required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verify the programmed cell
margin.
This automatic programming operation is completed
when the data on DQ7 (also used as Data Polling) is
equivalent to the data written to this bit at which time
the device returns to the read mode and addresses are
no longer latched (see Table 6, Write Operation Status). Therefore, the device requires that a valid address
to the device be supplied by the system at this particular instance of time for Data Polling operations. Data
Polling must be performed at the memory location
which is being programmed.
Any commands written to the chip during the Embedded Program Algorithm will be ignored. If a hardware
reset occurs during the programming operation, the
data at that particular location will be corrupted.
Programming is allowed in any sequence and across
sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success according to the data polling algorithm but a read
from reset/read mode will show that the data is still “0”.
Only erase operations can convert “0”s to “1”s.
Figure 1 illustrates the Embedded Programming Algor ithm using typic al command s tr ings and bus
operations.
Chip Erase
Chip erase is a six bus cycle operation. There are two
“unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are
then followed by the chip erase command.
Chip erase does not require the user to program the
device prior to erase. Upon executing the Embedded
Erase Algorithm command sequence the device will
automatically program and verify the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
The automatic erase begins on the rising edge of the
last WE pulse in the command sequence and terminates when the data on DQ7 is “1” (see Write Operation Status section) at which time the device returns to
read mode.
Figure 2 illustrates the Embedded Erase Algorithm
using typical command strings and bus operations.
Sector Erase
Sector erase is a six bus cycle operation. There are two
“unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are
then followed by the sector erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of WE, while the command (30H) is latched on the rising edge of WE. After
a time-out of 50 µs from the rising edge of the last sector erase command, the sector erase operation will
begin.
Multiple sectors may be erased sequentially by writing
the six bus cycle operations as described above. This
sequence is followed with writes of the Sector Erase
command to addresses in other sectors desired to be
concurrently erased. The time between writes must be
less than 50 µs otherwise that command will not be accepted and erasure will start. It is recommended that
processor interrupts be disabled during this time to
guarantee this condition. The interrupts can be re-enabled after the last Sector Erase command is written. A
time-out of 50 µs from the rising edge of the last WE will
initiate the execution of the Sector Erase command(s).
If another falling edge of the WE occurs within the 50
µs time-out window the timer is reset. (Monitor DQ3 to
determine if the sector erase timer window is still open,
see section DQ3, Sector Erase Timer.) Any command
other than Sector Erase or Erase Suspend during this
period will reset the device to the read mode, ignoring
the previous command string. In that case, restart the
erase on those sectors and allow them to complete.(Refer to the Write Operation Status section for
DQ3, Sector Erase Timer, operation.) Loading the sector erase buffer may be done in any sequence and with
any number of sectors (0 to 31).
Sector erase does not require the user to program the
device prior to erase. The device automatically programs all memory locations in the sector(s) to be
erased prior to electrical erase. When erasing a sector
or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations.
The automatic sector erase begins after the 50 µs time
out from the rising edge of the WE pulse for the last
sector erase command pulse and terminates when the
data on DQ7, Data Polling, is “1” (see Write Operation
Status section) at which time the device returns to the
read mode. Data Polling must be performed at an address within any of the sectors being erased.
Figure 2 illustrates the Embedded Erase Algorithm
using typical command strings and bus operations.
Erase Suspend
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data
reads or programs to a sector not being erased. This
command is applicable ONLY during the Sector Erase
operation which includes the time-out period for sector
erase. The Erase Suspend command will be ignored if
written during the Chip Erase operation or Embedded
Am29F016
13
Program Algorithm. Writing the Erase Suspend command during the Sector Erase time-out results in immediate termination of the time-out period and suspension
of the erase operation.
pended. Successively reading from the erase-susp e n d e d s e c t o r w h i l e t h e d ev i c e i s i n t h e
erase-suspend-read mode will cause DQ2 to toggle.
(See the section on DQ2).
Any other command written during the Erase Suspend
mode will be ignored except the Erase Resume command. Writing the Erase Resume command resumes
the erase operation. The addresses are “don’t-cares”
when writing the Erase Suspend or Erase Resume
command.
After entering the erase-suspend-read mode, the user
can program the device by writing the appropriate command sequence for Byte Program. This program mode
is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming
in the regular Byte Program mode except that the data
must be programmed to sectors that are not erase-suspended. Successively reading from the erase-susp e n d e d s e c t o r w h i l e t h e d ev i c e i s i n t h e
erase-suspend-program mode will cause DQ2 to toggle. The end of the erase-suspended program operation is detected by the RY/BY output pin, Data Polling
of DQ7, or by the Toggle Bit I (DQ6) which is the same
as the regular Byte Program operation. Note that DQ7
must be read from the byte program address while
DQ6 can be read from any address.
When the Erase Suspend command is written during
the Sector Erase operation, the device will take a maximum of 15 µs to suspend the erase operation. When
the device has entered the erase-suspended mode, the
RY/BY output pin and the DQ7 bit will be at logic ‘1’,
and DQ6 will stop toggling. The user must use the address of the erasing sector for reading DQ6 and DQ7 to
determine if the erase operation has been suspended.
Further writes of the Erase Suspend command are ignored.
When the erase operation has been suspended, the
device defaults to the erase-suspend-read mode.
Reading data in this mode is the same as reading from
the standard read mode except that the data must be
read from sectors that have not been erase-sus-
14
To resume the operation of Sector Erase, the Resume
command (30H) should be written. Any further writes of
the Resume command at this point will be ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
Am29F016
Write Operation Status
Table 6.
Write Operation Status
Status
Byte Program in Embedded Program Algorithm
Embedded Program Algorithm
Erase Suspended Read
(Erase Suspended Sector)
In Progress
Erase Suspended
Mode
Erase Suspended Read
(Non-Erase Suspended Sector)
Erase Suspended Read
(Non-Erase Suspended Sector)
Byte Program in Embedded Program Algorithm
Exceeded
Time Limits
Program/Erase Program in Embedded Program Algorithm
Erase Suspended
Mode
Erase Suspended Read
(non-Erase Suspended Sector)
DQ7
DQ6
DQ5
DQ3
DQ2
DQ7
Toggle
0
0
1
0
Toggle
0
1
Toggle
1
1
0
1
Data
Data
Data
Data
DQ7
Toggle
(Note 2)
0
1
DQ7
Toggle
1
0
1
0
Toggle
1
1
N/A
DQ7
Toggle
1
1
N/A
Toggle
(Note 1)
Data
1
(Note 3)
Notes:
1. Performing successive read operations from the erase-suspended sector will cause DQ2 to toggle.
2. Performing successive read operations from any address will cause DQ6 to toggle.
3. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic ‘1’ at the DQ2 bit.
However, successive reads from the erase-suspended sector will cause DQ2 to toggle.
DQ7
Data Polling
The Am29F016 device features Data Polling as a
method to indicate to the host that the embedded
algorithms are in progress or completed. During the
Embedded Program Algorithm, an attempt to read the
device will produce the complement of the data last
written to DQ7. Upon completion of the Embedded
Program Algorithm, an attempt to read the device will
produce the true data last written to DQ7. During the
Embedded Erase Algorithm, an attempt to read the
device will produce a “0” at the DQ7 output. Upon
completion of the Embedded Erase Algorithm an attempt to read the device will produce a “1” at the DQ7
output. The flowchart for Data Polling (DQ7) is shown
in Figure 3.
Data Polling will also flag the entry into Erase Suspend.
DQ7 will switch “0” to “1” at the start of the Erase Suspend mode. Please note that the address of an erasing
sector must be applied in order to observe DQ7 in the
Erase Suspend Mode.
During Program in Erase Suspend, Data Polling will
perform the same as in regular program execution outside of the suspend mode.
For chip erase, the Data Polling is valid after the rising
edge of the sixth WE pulse in the six write pulse
sequence. For sector erase, the Data Polling is valid
after the last rising edge of the sector erase WE pulse.
Data Polling must be performed at sector addresses
within any of the sectors being erased and not a sector
that is within a protected sector group. Otherwise, the
status may not be valid.
Just prior to the completion of Embedded Algorithm operations DQ7 may change asynchronously while the
output enable (OE) is asserted low. This means that
the device is driving status information on DQ7 at one
instant of time and then that byte’s valid data at the next
instant of time. Depending on when the system samples the DQ7 output, it may read the status or valid
data. Even if the device has completed the Embedded
Algorithm operations and DQ7 has a valid data, the
data outputs on DQ0–DQ6 may be still invalid. The
valid data on DQ0–DQ7 can be read on the successive
read attempts.
The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm, Erase Suspend, erase-suspend-program
mode, or sector erase time-out (see Table 6).
See Figure 11 for the Data Polling timing specifications
and diagrams.
Am29F016
15
DQ6
Toggle Bit I
The Am29F016 also features the “Toggle Bit I” as a
method to indicate to the host system that the embedded algorithms are in progress or completed.
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data
from the device at any address will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle is completed, DQ6 will
stop toggling and valid data will be read on the next
successive attempts. During programming, the Toggle
Bit I is valid after the rising edge of the fourth WE pulse
in the four write pulse sequence. For chip erase, the
Toggle Bit I is valid after the rising edge of the sixth WE
pulse in the six write pulse sequence. For Sector
Erase, the Toggle Bit I is valid after the last rising edge
of the sector erase WE pulse. The Toggle Bit I is active
during the sector erase time out.
Either CE or OE toggling will cause the DQ6 to toggle.
In addition, an Erase Suspend/Resume command will
cause DQ6 to toggle. See Figure 12 for the Toggle Bit I
timing specifications and diagrams.
DQ5
Exceeded Timing Limits
DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count).
Under these conditions DQ5 will produce a “1”. This is
a failure condition which indicates that the program or
erase cycle was not successfully completed. Data Polling is the only operating function of the device under
this condition. The CE circuit will partially power down
the device under these conditions (to approximately 2
mA). The OE and WE pins will control the output disable functions as described in Table 1.
The DQ5 failure condition will also appear if a user tries
to program a “1” to a location that is previously programmed to “0”. In this case the device locks out and
never completes the Embedded Program Algorithm.
Hence, the system never reads a valid data on DQ7 bit
and DQ6 never stops toggling. Once the device has exceeded timing limits, the DQ5 bit will indicate a “1.”
Please note that this is not a device failure condition
since the device was incorrectly used. If this occurs,
reset the device.
DQ3
If Data Polling or the Toggle Bit I indicates the device
has been written with a valid erase command, DQ3
may be used to determine if the sector erase timer window is still open. If DQ3 is high (“1”) the internally controlled erase cycle has begun; attempts to write
subsequent commands (other than Erase Suspend) to
the device will be ignored until the erase operation is
completed as indicated by Data Polling or Toggle Bit I.
If DQ3 is low (“0”), the device will accept additional sector erase commands. To insure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 were high on the second status check, the command may not have been accepted.
Refer to Table 6: Write Operation Status.
DQ2
Toggle Bit II
This toggle bit, along with DQ6, can be used to determine whether the device is in the Embedded Erase Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause
DQ2 to toggle during the Embedded Erase Algorithm.
If the device is in the erase-suspended-read mode,
successive reads from the erase-suspend sector will
cause DQ2 to toggle. When the device is in the
erase-suspended-program mode, successive reads
from the byte address of the non-erase suspended sector will indicate a logic ‘1’ at the DQ2 bit.
DQ6 is different from DQ2 in that DQ6 toggles only
when the standard Program or Erase, or Erase Suspend Program operation is in progress. The behavior of
these two status bits, along with that of DQ7, is summarized as follows:
Mode
Program
Erase
Erase Suspend Read (1)
(Erase-Suspended Sector)
Erase Suspend Program
DQ7
DQ6
DQ2
DQ7
toggles
1
0
toggles
toggles
1
1
toggles
DQ7 (2)
toggles
1 (2)
Notes:
1. These status flags apply when outputs are read from a
sector that has been erase-suspended.
Sector Erase Timer
2. These status flags apply when outputs are read from the
byte address of the non-erase suspended sector.
After the completion of the initial sector erase command sequence the sector erase time-out will begin.
DQ3 will remain low until the time-out is complete. Data
Polling and Toggle Bit I are valid after the initial sector
erase command sequence.
For example, DQ2 and DQ6 can be used together to
determine the erase-suspend-read mode (DQ2 toggles
while DQ6 does not). See also Table 6 and Figure 17.
16
Am29F016
Furthermore, DQ2 can also be used to determine
which sector is being erased. When the device is in the
erase mode, DQ2 toggles if this bit is read from the
erasing sector.
RY/BY
Ready/Busy
The Am29F016 provides a RY/BY open-drain output
pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been
completed. If the output is low, the device is busy with
either a program or erase operation. If the output is
high, the device is ready to accept any read/write or
erase operation. When the RY/BY pin is low, the device
will not accept any additional program or erase commands with the exception of the Erase Suspend command. If the Am29F016 is placed in an Erase Suspend
mode, the RY/BY output will be high.
During programming, the RY/BY pin is driven low after
the rising edge of the fourth WE pulse. During an erase
operation, the RY/BY pin is driven low after the rising
edge of the sixth WE pulse. The RY/BY pin will indicate
a busy condition during the RESET pulse. Refer to
Figure 13 for a detailed timing diagram. The RY/BY pin
is pulled high in standby mode.
Since this is an open-drain output, several RY/BY pins
can be tied together in parallel with a pull-up resistor
to VCC.
RESET
Hardware Reset
The Am29F016 device may be reset by driving the
RESET pin to VIL. The RESET pin must be kept low
(VIL) for at least 500 ns. Any operation in progress will
be terminated and the internal state machine will be
reset to the read mode 20 µs after the RESET pin is
driven low. If a hardware reset occurs during a program operation, the data at that particular location will
be indeterminate.
When the RESET pin is low and the internal reset is
complete, the device goes to standby mode and cannot
be accessed. Also, note that all the data output pins are
tri-stated for the duration of the RESET pulse. Once the
RESET pin is taken high, the device requires 500 ns of
wake up time until outputs are valid for read access.
The RESET pin may be tied to the system reset input.
Therefore, if a system reset occurs during the Embedded Program or Erase Algorithm, the device will be automatically reset to read mode and this will enable the
system’s microprocessor to read the boot-up firmware
from the Flash memory.
Data Protection
The Am29F016 is designed to offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power transitions. During power up the device automatically resets
the internal state machine in the Read mode. Also, with
its control register architecture, alteration of the memory contents only occurs after successful completion of
specific multi-bus cycle command sequences.
The device also incorporates several features to prevent inadvertent write cycles resulting from V CC
power-up and power-down transitions or system noise.
Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up
and power-down, a write cycle is locked out for V CC
less than 3.2 V (typically 3.7 V). If VCC < VLKO, the command register is disabled and all internal program/
erase circuits are disabled. Under this condition the device will reset to the read mode. Subsequent writes will
be ignored until the VCC level is greater than VLKO. It is
the user’s responsibility to ensure that the control pins
are logically correct to prevent unintentional writes
when VCC is above 3.2 V.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE or
WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = VIL,
CE = VIH or WE = VIH. To initiate a write cycle CE and
WE must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
Power-up of the device with WE = CE = V IL and
OE = V IH will not accept commands on the rising
edge of WE. The internal state machine is automatically reset to the read mode on power-up.
Am29F016
17
EMBEDDED ALGORITHMS
Start
Write Program Command Sequence
(see below)
Data Poll Device
Increment Address
No
Last Address
?
Yes
Programming Completed
Program Command Sequence (Address/Command):
5555H/AAH
2AAAH/55H
5555H/A0H
Program Address/Program Data
18805D-6
Figure 1. Embedded Programming Algorithm
18
Am29F016
EMBEDDED ALGORITHMS
Start
Write Erase Command Sequence
(see below)
Data Polling or Toggle Bit I
Successfully Completed
Erasure Completed
Chip Erase Command Sequence
(Address/Command):
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command):
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/80H
5555H/80H
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/10H
Sector Address/30H
Sector Address/30H
Additional sector
erase commands
are optional
Sector Address/30H
18805C-7
To insure the command has been accepted, the system software should check the status of DQ3 prior to and following
each subsequent sector erase command. If DQ3 were high on the second status check, the command may not have
been accepted.
Figure 2. Embedded Erase Algorithm
Am29F016
19
Start
VA = Byte address for programming
= Any of the sector addresses within the sector
being erased during sector erase operation
= Valid address equals any non-protected sector
group address during chip erase
Read Byte
(DQ0–DQ7)
Addr = VA
Yes
DQ7 = Data
?
No
No
DQ5 = 1
? Yes
Yes
Read Byte
(DQ0–DQ7)
Addr = VA
Yes
DQ7 = Data
?
No
Pass
Fail
18805D-8
DQ7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
Figure 3. Data Polling Algorithm
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
Figure 5. Maximum Negative Overshoot Waveform
20
Am29F016
18805D-10
Start
Read Byte
(DQ0–DQ7)
Addr = Don’t Care
No
DQ6 = Toggle
?
Yes
No
DQ5 = 1
? Yes
Yes
Read Byte
(DQ0–DQ7)
Addr = Don’t Care
No
DQ6 = Toggle
?
Yes
Pass
Fail
DQ6 is rechecked even if DQ5 = “1” because DQ6 may stop toggling at the same time as DQ5 changing to “1”.
18805D-9
Figure 4. Toggle Bit I Algorithm
20 ns
VCC + 2.0 V
VCC + 0.5 V
2.0 V
20 ns
20 ns
18805D-11
Figure 6. Maximum Positive Overshoot Waveform
Am29F016
21
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +125°C
vice to absolute maximum rating conditions for extended periods may affect device reliability.
OPERATING RANGES
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
Commercial (C) Devices
Voltage with Respect to Ground
All pins except A9 (Note 1). . . . . . . . .–2.0 V to +7.0 V
Industrial (I) Devices
VCC (Note 1). . . . . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9, OE, RESET (Note 2) . . . . . . . . .–2.0 V to +13.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, inputs may overshoot VSS to
–2.0 V for periods of up to 20 ns. Maximum DC voltage
on output and I/O pins is VCC + 0.5 V. During voltage
transitions, outputs may overshoot to VCC + 2.0 V for
periods up to 20 ns.
Case Temperature (TC). . . . . . . . . . . . . .0°C to +70°C
Case Temperature (TC). . . . . . . . . . . .–40°C to +85°C
VCC Supply Voltages
VCC for Am29F016-75 . . . . . . . . . +4.75 V to +5.25 V
VCC for Am29F016-90, 120, 150. . +4.50 V to +5.50 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
2. Minimum DC input voltage on A9, OE, RESET pins is
–0.5 V. During voltage transitions, A9, OE, RESET
pins may overshoot VSS to –2.0 V for periods of up to
20 ns. Maximum DC input voltage on A9 is +12.5 V
which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output shorted at a time. Duration of
the short circuit should not be greater than one second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or
any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure of the de-
22
Am29F016
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min
Max
Unit
±1.0
µA
50
µA
±1.0
µA
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9 Input Load Current
VCC = VCC Max, A9 = 12.0 Volt
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Active Current (Note 1)
CE = VIL, OE = VIH
40
mA
ICC2
VCC Active Current (Notes 2, 3)
CE = VIL, OE = VIH
60
mA
ICC3
VCC Standby Current
VCC = VCC Max, CE = VIH, RESET = VIH
1.0
mA
ICC4
VCC Standby Current (Reset)
VCC = VCC Max, RESET = VIL
1.0
mA
VIL
Input Low Level
–0.5
0.8
V
VIH
Input High Level
2.0
VCC + 0.5
V
VID
Voltage for Autoselect and Sector
VCC = 5.0 Volt
Protect
11.5
12.5
V
VOL
Output Low Voltage
IOL = 12 mA, VCC = VCC Min
0.45
V
VOH
Output High Level
IOH = –2.5 mA VCC = VCC Min
VLKO
Low VCC Lock-out Voltage
2.4
3.2
V
4.2
V
Notes:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 1 mA/MHz, with OE at VIH.
2. ICC active while Embedded Program or Erase Algorithm is in progress.
3. Not 100% tested.
Am29F016
23
DC CHARACTERISTICS (continued)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
±1.0
µA
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9 Input Load Current
VCC = VCC Max, A9 = 12.0 Volt
50
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC
Max
±1.0
µA
ICC1
VCC Active Current (Note 1)
CE = VIL, OE = VIH
25
40
mA
ICC2
VCC Active Current (Notes 2, 3)
CE = VIL, OE = VIH
30
40
mA
ICC3
VCC Standby Current
VCC = VCC Max, CE = VCC ± 0.3 V,
RESET = VCC ± 0.3 V
1
5
µA
ICC4
VCC Standby Current (Reset)
VCC = VCC Max,
RESET = VSS ± 0.3 V
1
5
µA
VIL
Input Low Level
–0.5
0.8
V
VIH
Input High Level
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect
and Sector Protect
VCC = 5.0 Volt
11.5
12.5
V
VOL
Output Low Voltage
IOL = 12 mA, VCC = VCC Min
0.45
V
VOH1
Output High Voltage
VOH2
VLKO
IOH = –2.5 mA, VCC = VCC Min
0.85 VCC
V
IOH = –100 µA, VCC = VCC Min
VCC – 0.4
V
Low VCC Lock-out Voltage
3.2
4.2
Notes:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 1 mA/MHz, with OE at VIH.
2. ICC active while Embedded Program or Erase Algorithm is in progress.
3. Not 100% tested.
24
Am29F016
V
AC CHARACTERISTICS
Read-only Operations Characteristics
Parameter Symbol
Speed Options (Notes 1 and 2)
JEDEC
Standard
Parameter Description
tAVAV
tRC
Read Cycle Time 4
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
-75
-90
-120
-150
Unit
Min
70
90
120
150
ns
CE = VIL
OE = VIL
Max
70
90
120
150
ns
OE = VIL
Max
70
90
120
150
ns
Output Enable to Output Delay
Max
40
40
50
55
ns
tDF
Chip Enable to Output High Z
(Notes 3, 4)
Max
20
20
30
35
ns
tGHQZ
tDF
Output Enable to Output High Z
(Notes 3, 4)
Max
20
20
30
35
ns
tAXQX
tOH
Output Hold Time From Addresses CE
or OE Whichever Occurs First
Min
0
0
0
0
ns
tReady
RESET Pin Low to Read Mode
4
Max
20
20
20
20
µs
Notes:
1. Test Conditions (for -75):
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level: 1.5 V input and
output
Test Setup
2. Test Conditions (for all others):
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level: 0.8 V and 2.0 V
input and output
3. Output driver disable time.
4. Not 100% tested.
5.0 Volt
IN3064
or Equivalent
Device
Under
Test
2.7 kΩ
6.2 kΩ
CL
Diodes = IN3064
or Equivalent
Note:
CL (for -75) = 30 pF including jig capacitance
CL (for all others) = 100 pF including jig capacitance
18805D-11
Figure 7. Test Conditions
Am29F016
25
AC CHARACTERISTICS
Write/Erase/Program Operations
Parameter Symbol
JEDEC
Speed Options (Notes 1 and 2)
Standard
Parameter Description
-75
-90
-120
-150
Unit
tAVAV
tWC
Write Cycle Time
Min
70
90
120
150
ns
tAVWL
tAS
Address Setup Time
Min
0
0
0
0
ns
tWLAX
tAH
Address Hold Time
Min
40
45
50
50
ns
tDVWH
tDS
Data Setup Time
Min
40
45
50
50
ns
tWHDX
tDH
Data Hold Time
Min
0
0
0
0
ns
Read 2
Min
0
0
0
0
ns
tOEH
Output
Enable
Hold Time
Toggle Bit I and Data Polling
2
Min
10
10
10
10
ns
Min
0
0
0
0
ns
Read Recover Time Before Write
tGHWL
tGHWL
tELWL
tCS
CE Setup Time
Min
0
0
0
0
ns
tWHEH
tCH
CE Hold Time
Min
0
0
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
40
45
50
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
7
7
7
µs
Typ
1
1
1
1
sec
tWHWH2
tWHWH2
Sector Erase Operation 1
Max
8
8
8
8
sec
tVCS
VCC Set Up Time 2
Min
50
50
50
50
µs
tVIDR
Rise Time to VID (Notes 2, 3)
Min
500
500
500
500
ns
tVLHT
Voltage Transition Time (Notes 2, 3)
Min
4
4
4
4
µs
tOESP
OE Setup Time to WE Active (Notes 2, 3)
Min
4
4
4
4
µs
tRP
RESET Pulse Width
Min
500
500
500
500
ns
tBUSY
Program/Erase Valid to RY/BY Delay
Min
40
40
50
60
ns
(OE high to WE low)
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
3. These timings are for Temporary Sector Group Unprotect operation.
26
Am29F016
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Must be
Steady
Will be
Steady
May
Change
from H to L
Will be
Changing
from H to L
May
Change
from L to H
Will be
Changing
from L to H
Don’t Care,
Any Change
Permitted
Changing,
State
Unknown
Does Not
Apply
Center
Line is HighImpedance
“Off” State
KS000010-PAL
SWITCHING TEST WAVEFORM
tRC
Addresses Stable
Addresses
tACC
CE
(tDF)
tOE
OE
tOEH
WE
(tCE)
(tOH)
Outputs
High Z
High Z
Output Valid
18805D-12
Figure 8. AC Waveforms for Read Operations
Am29F016
27
SWITCHING WAVEFORMS
Data Polling
3rd Bus Cycle
Addresses
5555H
PA
tWC
tAS
PA
tAH
tRC
CE
tGHWL
OE
tWHWH1
tWP
WE
tWPH
tCS
tDH
Data
PD
A0H
tDF
tOE
DQ7
DOUT
tDS
tOH
5.0 Volt
tCE
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
18805D-13
Figure 9. Program Operation Timings
tAH
5555H
Addresses
2AAAH
5555H
5555H
2AAAH
80H
AAH
55H
SA
tAS
CE
tGHWL
OE
tWP
WE
tWPH
tCS
tDH
Data
AAH
55H
10H/30H
tDS
VCC
tVCS
Note:
SA is the sector address for Sector Erase. Addresses = don’t care for Chip Erase.
18805D-14
Figure 10.
28
AC Waveforms Chip/Sector Erase Operations
Am29F016
SWITCHING WAVEFORMS
tCH
CE
tDF
tOE
OE
tOEH
tCE
WE
tOH
*
DQ7
DQ7 =
Valid Data
DQ7
High Z
tWHWH 1 or 2
DQ0–DQ6
DQ0–DQ6 = Invalid
DQ0–DQ7
Valid Data
*DQ7 = Valid Data (The device has completed the Embedded operation).
18805D-15
Figure 11.
AC Waveforms for Data Polling During Embedded Algorithm Operations
CE
tOEH
WE
OE
*
Data (DQ0–DQ7)
DQ6 = Toggle
DQ6 =
Stop Toggling
DQ6 = Toggle
DQ0–DQ7
Valid
tOE
*DQ6 stops toggling (The device has completed the Embedded operation).
18805D-16
Figure 12. AC Waveforms for Toggle Bit I During Embedded Algorithm Operations
Am29F016
29
CE
The rising edge of the last WE signal
WE
Entire programming
or erase operations
RY/BY
tBUSY
18805D-17
Figure 13.
RY/BY Timing Diagram During Program/Erase Operations
RESET
tRP
tReady
18805D-18
Figure 14.
RESET Timing Diagram
Start
RESET = VID
(Note 1)
Perform Erase or
Program Operations
RESET = VIH
Temporary Sector Group
Unprotect Completed
(Note 2)
18805D-21
Notes:
1. All protected sector groups unprotected.
2. All previously protected sector groups are protected once again.
Figure 15.
30
Temporary Sector Group Unprotect Algorithm
Am29F016
12V
RESET
0 or 5V
0V or 5 V
tVIDR
CE
WE
Program or Erase Command Sequence
RY/BY
18805D-22
Figure 16. Temporary Sector Group Unprotect Timing Diagram
Enter
Embedded
Erasing
WE
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Toggle
DQ2 and DQ6
with OE
Note:
DQ2 is read from the erase-suspended sector.
18805D-23
Figure 17.
DQ2 vs. DQ6
Am29F016
31
AC CHARACTERISTICS
Write/Erase/Program Operations
Alternate CE Controlled Writes
Parameter Symbol
JEDEC
Speed Options (Notes 1 and 2)
Standard
Parameter Description
-75
-90
-120
-150
Unit
tAVAV
tWC
Write Cycle Time
Min
70
90
120
150
ns
tAVEL
tAS
Address Setup Time
Min
0
0
0
0
ns
tELAX
tAH
Address Hold Time
Min
40
45
50
50
ns
tDVEH
tDS
Data Setup Time
Min
40
45
50
50
ns
tEHDX
tDH
Address Hold Time
Min
0
0
0
0
ns
tOES
Output Enable Setup Time (Note 2)
Min
0
0
0
0
ns
Read (Note 2)
Min
0
0
0
0
ns
tOEH
Output
Enable
Hold Time
Toggle Bit I and Data Polling
(Note 2)
Min
10
10
10
10
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
0
0
0
0
ns
tWLEL
tWS
CE Setup Time
Min
0
0
0
0
ns
tEHWH
tWH
CE Hold Time
Min
0
0
0
0
ns
tELEH
tCP
Write Pulse Width
Min
40
45
50
50
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
20
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
7
7
7
µs
Typ
1
1
1
1
sec
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)
Max
8
8
8
8
sec
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
32
Am29F016
Data Polling
Addresses
5555H
PA
tWC
tAS
PA
tAH
WE
tGHEL
OE
tCP
tWHWH1
CE
tWS
tCPH
tDH
Data
PD
A0H
DQ7
DOUT
tDS
5.0 Volt
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
18805D-24
Figure 18.
Alternate CE Controlled Program Operation Timing
Am29F016
33
ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Min
Typ
Max
Unit
Comments
1 (Note 1)
8
sec
Excludes 00H programming prior
to erasure
Chip Erase Time
32
256
sec
Excludes 00H programming prior
to erasure
Byte Programming Time
7
300 (Note 3)
µs
Excludes system-level overhead
sec
Excludes system-level overhead
Sector Erase Time
Chip Programming Time
14.4 (Note 1) 43.2 (Notes 2, 3)
Notes:
1. 25°C, 5 V VCC, 100,000 cycles.
2. Although Embedded Algorithms allow for a longer chip program and erase time, the actual time will be considerably less since
bytes program or erase significantly faster than the worst case byte.
3. Under worst case condition of 90°C, 4.5 V VCC, 100,000 cycles.
LATCHUP CHARACTERISTIC
Input Voltage with respect to VSS on I/O pins
VCC Current
Min
Max
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
Includes all pins except VCC. Test conditions: VCC = 5.0 Volt, one pin at a time.
TSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Conditions
Max
Unit
6
7.5
pF
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
CIN
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
34
Min
Am29F016
PHYSICAL DIMENSIONS
TS 048
48-Pin Standard Thin Small Outline Package
0.95
1.05
Pin 1 I.D.
1
48
11.90
12.10
0.50 BSC
24
25
0.05
0.15
18.30
18.50
19.80
20.20
0.08
0.20
0.10
0.21
1.20
MAX
0°
5°
0.25MM (0.0098") BSC
16-038-TS48-2
TS 048
DA101
8-8-94 ae
0.50
0.70
Am29F016
35
PHYSICAL DIMENSIONS
TSR048
48-Pin Reversed Thin Small Outline Package
0.95
1.05
Pin 1 I.D.
1
48
11.90
12.10
0.50 BSC
24
25
0.05
0.15
18.30
18.50
19.80
20.20
SEATING PLANE
0.08
0.20
0.10
0.21
1.20
MAX
0°
5°
0.25MM (0.0098") BSC
16-038-TS48
TSR048
DA104
8-8-94 ae
0.50
0.70
Trademarks
Copyright © 1997 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
36
Am29F016
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