ON MMBTA56W Driver transistor Datasheet

MMBTA56W, SMMBTA56W
Driver Transistor
PNP Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating:
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Human Body Model − 4 kV
Machine Model − 400 V
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
♦
♦
•
•
SC−70 (SOT−323)
CASE 419
STYLE 3
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−80
Vdc
Collector−Base Voltage
VCBO
−80
Vdc
Emitter−Base Voltage
VEBO
−4.0
Vdc
IC
−500
mAdc
Collector Current − Continuous
1
BASE
2
EMITTER
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
Unit
mW
150
RqJA
833
°C/W
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
FM M G
G
1
FM
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBTA56WT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
SMMBTA56WT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
SMMBTA56WT3G
SC−70
(Pb−Free)
10,000 /
Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 4
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBTA56WT1/D
MMBTA56W, SMMBTA56W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−80
−
−4.0
−
−
−0.1
−
−
−
−0.1
100
100
−
−
−
−0.25
−
−1.2
50
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = −60 Vdc, IB = 0)
ICES
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
(VCB = −80 Vdc, IE = 0)
ICBO
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = −100 mAdc, IB = −10 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = −100 mAdc, VCE = −1.0 Vdc)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
fT
Current−Gain − Bandwidth Product (Note 2)
(IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz)
MHz
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN-ON TIME
TURN-OFF TIME
VCC
-1.0 V
VCC
+VBB
+40 V
5.0 ms
100
+40 V
RL
100
OUTPUT
+10 V
Vin
tr = 3.0 ns
OUTPUT
Vin
RB
0
* CS t 6.0 pF
5.0 mF
RL
RB
* CS t 6.0 pF
5.0 mF
100
100
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
200
100
VCE = -2.0 V
TJ = 25°C
TJ = 25°C
70
50
C, CAPACITANCE (pF)
100
70
50
20
Cobo
10
30
7.0
20
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
5.0
-0.1 -0.2
-200
-10
-20
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
-1.0 k
-700
-500
ts
100 ms
1.0 s
TC = 25°C
-200
100
70
50
VCC = -40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-30
-20
tr
td @ VBE(off) = -0.5 V
10
-5.0 -7.0 -10
TA = 25°C
-100
-70
-50
tf
-50 -100
1.0 ms
-300
200
30
-5.0
VR, REVERSE VOLTAGE (VOLTS)
300
20
-0.5 -1.0 -2.0
IC, COLLECTOR CURRENT (mA)
1.0 k
700
500
t, TIME (ns)
Cibo
30
I C , COLLECTOR CURRENT (mA)
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz
MMBTA56W, SMMBTA56W
-10
-20 -30
-50 -70 -100
-200 -300
-500
-1.0
IC, COLLECTOR CURRENT (mA)
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Switching Time
Figure 5. Active−Region Safe Operating Area
400
-1.0
TJ = 25°C
TJ = 125°C
-0.8
200
V, VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN
VCE = -1.0 V
25°C
-55°C
100
80
-0.6
VBE(on) @ VCE = -1.0 V
-0.4
-0.2
60
40
-0.5 -1.0 -2.0
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
-5.0 -10
-20
-50
-100 -200
0
-0.5
-500
-1.0 -2.0
-5.0
-10
-20
-50
-100 -200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
Figure 7. “ON” Voltages
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3
-500
-1.0
R qVB , TEMPERATURE COEFFICIENT (mV/° C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
MMBTA56W, SMMBTA56W
TJ = 25°C
-0.8
IC =
-100 mA
IC =
-50 mA
IC =
-250 mA
IC =
-500 mA
-0.6
-0.4
-0.2
IC =
-10 mA
0
-0.05 -0.1 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-0.8
-1.2
-1.6
-2.0
RqVB for VBE
-2.4
-2.8
-0.5 -1.0 -2.0
-5.0
-10
-20
-50
-100 -200
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Collector Saturation Region
Figure 9. Base−Emitter Temperature
Coefficient
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4
-500
MMBTA56W, SMMBTA56W
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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