DMT8012LPS Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features BVDSS RDS(ON) 80V 17mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID TC = +25°C 65A 59A Description and Applications High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Mechanical Data ideal for high-efficiency power management applications. Case: PowerDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) Synchronous Rectifier Backlighting Power Management Functions DC-DC Converters ® PowerDI5060-8 Pin1 Top View Bottom View Internal Schematic S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMT8012LPS-13 Notes: Case PowerDI5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information D D D D =Manufacturer’s Marking T8012LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) T8012LS YY WW S S S G PowerDI is a registered trademark of Diodes Incorporated. DMT8012LPS Document number: DS37738 Rev. 4 - 2 1 of 7 www.diodes.com July 2017 © Diodes Incorporated DMT8012LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = 10V (Note 5) Continuous Drain Current, VGS = 10V (Note 6) TA = +25°C TA = +70°C TC = +25°C TC = +70°C Value 80 ±20 9 7.2 ID A 65 51 80 80 11.6 10.2 A A A mJ Value 2.1 56 113 1.1 -55 to +150 Unit W °C/W W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH Unit V V IS IDM IAS EAS A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics TA = +25°C TC = +25°C Symbol PD RθJA PD RθJC TJ, TSTG (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 80 - - 1 ±100 V μA nA VGS = 0V, ID = 1mA VDS = 64V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) 3 17 21 1.2 mΩ VSD 1.3 14 16.5 0.9 V Static Drain-Source On-Resistance 1 - VDS = VGS, ID = 250μA VGS = 10V, ID = 12A VGS = 4.5V, ID = 6A VGS = 0V, IS = 20A Ciss Coss Crss - 1,949 177 10 - pF VDS = 40V, VGS = 0V, f = 1MHz Gate Resistance Rg - 0.7 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Qg Qg Qgs Qgd - 15 34 6 4.5 4.9 3.8 16.5 3.5 30.2 34.6 - nC VDS = 40V, ID = 12A ns VDD = 40V, VGS = 10V, ID = 12A, RG = 1.6Ω ns nC IF = 12A, di/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: tD(ON) tR tD(OFF) tF tRR QRR V Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT8012LPS Document number: DS37738 Rev. 4 - 2 2 of 7 www.diodes.com July 2017 © Diodes Incorporated DMT8012LPS 30.0 30 25 VGS=6.0V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS= 5.0V VGS=10.0V 25.0 VGS=5.0V VGS=4.5V VGS=4.0V 15.0 10.0 20 15 10 5.0 5 -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0.030 0.025 VGS = 4.5V 0.020 0.015 0.010 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 25℃ 125℃ VGS=3.5V VGS = 10.0V 0.005 0.000 0.02 0.015 ID=12A ID=6A 0.01 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS=10V 150℃ 0.025 125℃ 0.02 85℃ 0.015 25℃ 0.01 -55℃ 5 0.025 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.03 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.03 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 150℃ 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.5 2.3 2.1 1.9 VGS=10V, ID=20A 1.7 1.5 1.3 1.1 VGS=4.5V, ID=20A 0.9 0.7 0.5 0.005 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Temperature DMT8012LPS Document number: DS37738 Rev. 4 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature July 2017 © Diodes Incorporated 3.5 0.04 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMT8012LPS 0.03 VGS=4.5V, ID=20A 0.02 0.01 VGS=10V, ID=20A 3 ID=1mA 2.5 2 ID=250µA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 30 10000 VGS=0V CT, JUNCTION CAPACITANCE (pF) f=1MHz IS, SOURCE CURRENT (A) 25 20 15 10 TA=85℃ TA=150℃ 5 TA=25℃ TA=125℃ Ciss 1000 Coss 100 Crss 10 TA=-55℃ 0 1 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1.5 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 100 10 RDS(ON) LIMITED 9 PW =1μs ID, DRAIN CURRENT (A) 8 7 VGS (V) 6 5 4 VDS=40V, ID=12A 3 PW =100μs PW =1ms PW =10ms 1 2 1 0.1 0 0 5 10 15 20 Qg (nC) 25 30 35 Document number: DS37738 Rev. 4 - 2 TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V 0.1 PW =100ms PW =1s 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 12. SOA, Safe Operation Area Figure 11. Gate Charge DMT8012LPS PW =10μs 10 4 of 7 www.diodes.com July 2017 © Diodes Incorporated DMT8012LPS r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC (t)=r(t) * RθJC RθJC=1.05℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMT8012LPS Document number: DS37738 Rev. 4 - 2 5 of 7 www.diodes.com July 2017 © Diodes Incorporated DMT8012LPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M M1 Detail A L1 G b3 (4X) PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMT8012LPS Document number: DS37738 Rev. 4 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 July 2017 © Diodes Incorporated DMT8012LPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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