Fairchild FDBL0090N40 N-channel powertrenchâ® mosfet Datasheet

FDBL0090N40
N-Channel PowerTrench® MOSFET
40 V, 240 A, 0.9 mΩ
Features
„ Typical RDS(on) = 0.65 mΩ at VGS = 10V, ID = 80 A
„ Typical Qg(tot) = 144 nC at VGS = 10V, ID = 80 A
D
„ UIS Capability
„ RoHS Compliant
Applications
„ Industrial Motor Drive
G
„ Industrial Power Supply
„ Industrial Automation
„ Battery Operated tools
S
„ Battery Protection
For current package drawing, please refer to the Fairchild web‐
site at https://www.fairchildsemi.com/evaluate/package‐spec‐
ifications/packageDetails.html?id=PN_PSOFA‐008
„ Solar Inverters
„ UPS and Energy Inverters
„ Energy Storage
„ Load Switch
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Drain-to-Source Voltage
VGS
ID
EAS
PD
Parameter
Gate-to-Source Voltage
Ratings
40
Units
V
±20
V
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
240
Pulsed Drain Current
TC = 25°C
See Figure 4
Single Pulse Avalanche Energy
(Note 2)
A
737
mJ
Power Dissipation
357
W
Derate Above 25oC
2.38
W/oC
TJ, TSTG Operating and Storage Temperature
o
-55 to + 175
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
o
0.42
(Note 3)
C
C/W
oC/W
43
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.36mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
Package Marking and Ordering Information
Device Marking
FDBL0090N40
Device
FDBL0090N40
©2014 Fairchild Semiconductor Corporation
FDBL0090N40 Rev.C2
Package
MO-299A
-
1
-
-
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FDBL0090N40 N-Channel PowerTrench® MOSFET
November 2014
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-to-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 40V,
VGS = 0V
40
-
-
V
-
-
1
μA
-
-
1
mA
-
-
±100
nA
TJ = 25oC
TJ = 175oC (Note 4)
VGS = ±20V
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 80A,
VGS= 10V
2.0
3.3
4.0
V
-
0.65
0.90
mΩ
-
1.10
1.50
mΩ
TJ = 25oC
TJ = 175oC (Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge at 10V
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate-to-Source Gate Charge
Qgd
Gate-to-Drain “Miller“ Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
VDD = 32V
ID = 80A
-
12000
-
pF
-
3260
-
pF
-
442
-
pF
-
3.3
-
Ω
-
144
188
nC
-
22
26
nC
-
66
-
nC
16
-
nC
ns
Switching Characteristics
ton
Turn-On Time
-
-
162
td(on)
Turn-On Delay
-
42
-
ns
tr
Rise Time
-
73
-
ns
td(off)
Turn-Off Delay
-
83
-
ns
tf
Fall Time
-
50
-
ns
toff
Turn-Off Time
-
-
279
ns
V
VDD = 20V, ID = 80A,
VGS = 10V, RGEN = 6Ω
Drain-Source Diode Characteristics
VSD
Source-to-Drain Diode Voltage
trr
Reverse-Recovery Time
Qrr
Reverse-Recovery Charge
ISD =80A, VGS = 0V
-
-
1.25
ISD = 40A, VGS = 0V
-
-
1.2
V
IF = 80A, dISD/dt = 100A/μs,
VDD=32V
-
111
129
ns
-
178
214
nC
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
FDBL0090N40 Rev.C2
2
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FDBL0090N40 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
600
1.0
500
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
CURRENT LIMITED
BY PACKAGE
VGS = 10V
CURRENT LIMITED
BY SILICON
400
300
200
100
0
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
200
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
VGS = 10V
TC = 25oC
IDM, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
I = I2
175 - TC
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
FDBL0090N40 Rev.C2
3
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FDBL0090N40 N-Channel PowerTrench® MOSFET
Typical Characteristics
100
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
10
1
1ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
0.1
10ms
100ms
TJ = 25oC
60
0
2
0.01
0.1
1
10
100
1000 10000
400
180
TJ = 175oC
STARTING TJ = 150oC
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
120
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
240
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
300
100
1
0.001
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
TJ = -55oC
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
VGS = 0 V
100
TJ = 175 oC
10
TJ = 25 oC
1
0.1
0.0
7
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
300
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
250
200
150
100
80μs PULSE WIDTH
Tj=25oC
50
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
2000
1000
5V
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5V
200
150
100
50
0
5
Figure 9. Saturation Characteristics
FDBL0090N40 Rev.C2
250
VGS
5.5V
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
80μs PULSE WIDTH
Tj=175oC
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 10. Saturation Characteristics
4
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FDBL0090N40 N-Channel PowerTrench® MOSFET
Typical Characteristics
ID = 80A
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
10
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
8
6
TJ = 175oC
TJ = 25oC
4
2
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 11. RDSON vs. Gate Voltage
1.6
1.4
1.2
1.0
0.8
ID = 80A
VGS = 10V
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 12. Normalized RDSON vs. Junction
Temperature
1.10
VGS = VDS
ID = 250μA
1.2
ID = 1mA
1.05
0.9
1.00
0.6
0.95
0.3
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.90
-80
200
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
Ciss
10000
Coss
1000
Crss
100
f = 1MHz
VGS = 0V
10
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs. Drain to Source
Voltage
FDBL0090N40 Rev.C2
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
100000
CAPACITANCE (pF)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.8
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
2.0
10
ID = 80A
VDD = 20V
8
VDD =16V
6
VDD = 24V
4
2
0
0
30
60
90
120
Qg, GATE CHARGE(nC)
150
Figure 16. Gate Charge vs. Gate to Source
Voltage
5
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FDBL0090N40 N-Channel PowerTrench® MOSFET
Typical Characteristics
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Datasheet contains the design specifications for product development. Specifications
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I71
FDBL0090N40 Rev.C2
6
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