IXYS IXFP20N85X X-class hiperfettm Datasheet

IXFA20N85XHV
IXFP20N85X
IXFH20N85X
X-Class HiPerFETTM
Power MOSFET
VDSS
ID25
= 850V
= 20A
 330m

RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263HV
G
S
D (Tab)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
850
V
VDGR
TJ = 25C to 150C, RGS = 1M
850
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
20
A
IDM
TC = 25C, Pulse Width Limited by TJM
50
A
IA
TC = 25C
10
A
EAS
TC = 25C
800
mJ
dv/dt
IS  IDM, VDD  VDSS, TJ  150°C
50
V/ns
PD
TC = 25C
540
W
-55 ... +150
C
TJ
TJM
150
C
Tstg
-55 ... +150
C
300
260
°C
°C
10.65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
2.5
3.0
6.0
g
g
g
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
FC
Md
Mounting Force (TO-263HV)
Mounting Torque (TO-220 & TO-247)
Weight
TO-263HV
TO-220
TO-247
TO-220AB (IXFP)
G
DS
D (Tab)
TO-247 (IXFH)
G
D
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features





International Standard Packages
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
850
VGS(th)
VDS = VGS, ID = 2.5mA
3.5
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)


V
5.5
V
100 nA
TJ = 125C
VGS = 10V, ID = 0.5 • ID25, Note 1

25 A
1.5 mA
330 m
Applications





© 2016 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100703C(6/16)
IXFA20N85XHV
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
6
RGi
Gate Input Resistance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
10
S
0.8

1660
pF
1730
pF
24
pF
67
270
pF
pF
20
ns
28
ns
44
ns
20
ns
63
nC
12
nC
26
nC
Crss
IXFP20N85X
IXFH20N85X
Effective Output Capacitance
Co(er)
Co(tr)
Energy related
td(on)
Resistive Switching Times
tr
td(off)
tf
Time related
VGS = 0V
VDS = 0.8 • VDSS
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.23 C/W
RthJC
RthCS
TO-220
TO-247
C/W
C/W
0.50
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
IS
VGS = 0V
20
A
ISM
Repetitive, pulse Width Limited by TJM
80
A
VSD
IF = IS, VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
IF = 20A, -di/dt = 100A/μs
190
1.6
16.5
ns
μC
A
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
VR = 100V
Note 1. Pulse test, t  300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFA20N85XHV
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
20
45
VGS = 10V
VGS = 15V
18
40
11V
16
35
14
I D - Amperes
12
10
8
10V
30
9V
I D - Amperes
IXFP20N85X
IXFH20N85X
8V
25
9V
20
15
6
8V
10
4
7V
5
2
7V
6V
0
0
0
1
2
3
4
5
6
0
7
5
10
15
VDS - Volts
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
3.4
20
VGS = 10V
18
VGS = 10V
3.0
9V
16
R DS(on) - Normalized
2.6
I D - Amperes
14
12
8V
10
8
7V
6
I D = 20A
2.2
I D = 10A
1.8
1.4
1.0
4
0.6
6V
2
0.2
0
0
2
4
6
8
10
12
14
16
-50
18
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 10A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
3.4
150
1.2
VGS = 10V
TJ = 125ºC
BVDSS / VGS(th) - Normalized
RDS(on) - Normalized
3.0
2.6
2.2
1.8
TJ = 25ºC
1.4
1.1
BVDSS
1.0
0.9
VGS(th)
0.8
1.0
0.6
0.7
0
5
10
15
20
I D - Amperes
© 2016 IXYS CORPORATION, All Rights Reserved
25
30
35
-60
-40
-20
0
20
40
60
80
TJ - Degrees Centigrade
100
120
140
160
IXFA20N85XHV
Fig. 7. Maximum Drain Current vs. Case Temperature
IXFP20N85X
IXFH20N85X
Fig. 8. Input Admittance
20
24
18
20
16
14
I D - Amperes
I D - Amperes
16
12
TJ = 125ºC
25ºC
- 40ºC
12
10
8
8
6
4
4
2
0
0
-50
-25
0
25
50
75
100
125
150
4.0
4.5
5.0
5.5
6.0
TC - Degrees Centigrade
6.5
7.0
7.5
8.0
8.5
9.0
9.5
VGS - Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
18
50
TJ = - 40ºC
16
45
40
14
35
12
125ºC
I S - Amperes
g f s - Siemens
25ºC
10
8
30
25
20
6
TJ = 125ºC
15
TJ = 25ºC
4
10
2
5
0
0
0
2
4
6
8
10
12
14
16
18
20
0.3
0.4
0.5
0.6
I D - Amperes
0.7
0.8
1.0
1.1
1.2
Fig. 12. Capacitance
Fig. 11. Gate Charge
16
10,000
VDS = 425V
14
Ciss
Capacitance - PicoFarads
I D = 10A
I G = 10mA
12
VGS - Volts
0.9
VSD - Volts
10
8
6
4
1,000
Coss
100
10
2
Crss
f = 1 MHz
1
0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
100
VDS - Volts
1000
IXFA20N85XHV
IXFP20N85X
IXFH20N85X
Fig. 14. Forward-Bias Safe Operating Area
Fig. 13. Output Capacitance Stored Energy
100
25
RDS(on) Limit
25µs
20
100µs
I D - Amperes
EOSS - MicroJoules
10
15
10
1
1ms
0.1
TJ = 150ºC
5
10ms
TC = 25ºC
Single Pulse
DC
0.01
0
0
100
200
300
400
500
600
700
800
10
900
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
Z(th)JC - K / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
© 2016 IXYS CORPORATION, All Rights Reserved
0.1
1
10
IXFA20N85XHV
IXFP20N85X
IXFH20N85X
TO-263HV Outline
1 = Gate
2 = Source
3 = Drain
TO-247 Outline
TO-220 Outline
A
E
E
A2
E2/2
Q
0P
U
H1
Q
D
T
4
(D2)
1
D1
2
2
3
4
3
(E1)
L1
L
A2
EJECTOR
PIN
0P
S
E2
D
1
R
A
A1
L1
L
b2
e
c
e1
3X b
b4
b
e
c
A1
3X b2
1 = Gate
2,4 = Drain
3 = Source
1 = Gate
2,4 = Drain
3 = Source
W
BOTTOM FLATNESS
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_20N85X(S5-D901) 2-09-16
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