NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package High Drain Efficiency (>60%) Applications Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM Applications VHF/UHF/L-Band Radar DC-2.2 GHz 100W GaN HEMT Product Description The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange. RF Specifications (CW, 2.15 GHz): VDS = 48V, IDQ = 600mA, TC= 25°C Symbol Parameter Min Typ Max Units G SS Small-signal Gain - 17 - dB PSAT Saturated Output Power - 50.5 - dBm SAT Efficiency at Saturated Output Power - 64 - % Gain at POUT = 95W 13.5 15 - dB Drain Efficiency at POUT = 95W 52.5 61 - % - 48 - V GP VDS Drain Voltage Ruggedness: Output Mismatch, all phase angles Page 1 VSWR = 10:1, No Device Damage NDS-034 Rev. 1, 052413 NPT2010 DC Specifications: TC = 25°C Symbol Parameter Min Typ Max Units Off Characteristics IDLK Drain-Source Leakage Current (VGS=-8V, VDS=160V) - - 24 mA IGLK Gate-Source Leakage Current (VGS=-8V, VDS=0V) - - 12 mA On Characteristics VT Gate Threshold Voltage (VDS=48V, I D=24mA) -2.5 -1.5 -0.5 V VGSQ Gate Quiescent Voltage (VDS=48V, I D=600mA) -2.1 -1.2 -0.3 V RON On Resistance (VDS=2V, I D=180mA) - 0.2 - Maximum Drain Current (VDS=7V pulsed, 300µS pulse width, 0.2% Duty Cycle) - 14 - A Typ Units 1.75 °C/W ID, MAX Thermal Resistance Specification: Symbol RJC Parameter Thermal Resistance (Junction-to-Case), TJ = 200 °C Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in heatsink. Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 160 V VGS Gate-Source Voltage -10 to 3 V IG Gate Current 48 mA PT Total Device Power Dissipation (Derated above 25°C) 114 W -65 to 150 °C 225 °C TSTG TJ HBM Storage Temperature Range Operating Junction Temperature Human Body Model ESD Rating (per JESD22-A114) Page 2 Class 1A NDS-034 Rev. 1, 052413 NPT2010 Load-Pull Data, Reference Plane at Device Leads VDS=48V, IDQ=600mA, TC=25C unless otherwise noted Optimum Source and Load Impedances: (CW Drain Efficiency and Output Power Tradeoff Impedance) Frequency ZS () PSAT (W) ZL () GSS (dB) (MHz) Drain Efficiency @ PSAT (%) 500 1.1 + j0.8 5.9 + j2.0 144 26.1 66.8 900 1.3 - j1.7 5.7 + j3.2 125 21.9 71.4 2200 2.0 - j6.5 2.7 - j1.9 115 16.6 66.6 Figure 1: CW Power/Drain Efficiency Tradeoff Impedances, ZO=10 Figure 3: Efficiency vs. POUT Figure 2: Gain vs. POUT Page 3 NDS-034 Rev. 1, 052413 NPT2010 2.15 GHz Narrowband Circuit (CW, VDS=48V, IDQ=600mA, TC=25C, unless otherwise noted) Figure 4: Component Placement of 2.15 GHz Narrowband Circuit for NPT2010 Reference Value Manufacturer Part Number C1, C5 1uF AVX 1210C105KAT2A C2, C6 0.1uF Kemet C1206C104K1RACTU C3, C7 0.01uF AVX 1206C103KAT2A C4, C8 1000pF Kemet C0805C102K1RACTU C9 240pF ATC ATC600F241B C10 10pF ATC ATC800B100B C11 1pF ATC ATC800B1R0B C12 0.8pF ATC ATC600F0R8B C13 0.9pF ATC ATC600F0R9B C14 10pF ATC ATC600F100B C15 1.5pF ATC ATC800B1R5B C16 15pF ATC ATC800B150B L1 12.5nH CoilCraft A04TJL L2 19.4nH CoilCraft 0806SQ-19NJL L3 8.0nH CoilCraft A03TJL R1 15Ω Panasonic ERJ-2RKF15R0X PCB RO4350, r=3.5, 0.020” Rogers Nitronex NBD-139r1 Page 4 NDS-034 Rev. 1, 052413 NPT2010 Typical Performance in 2.15 GHz Narrowband Circuit (CW, VDS=48V, IDQ=600mA, f=2.15GHz, TC=25C, unless otherwise noted) Figure 5. Electrical Schematic of 2.15 GHz Narrowband Circuit for NPT2010 (For RF Tuning details see Component Placement Diagram Figure 4) Figure 6: Gain vs. POUT Figure 7: Drain Efficiency vs. POUT Figure 8: Quiescent VGS vs. Temperature Figure 9: Power De-rating Curve (TJ = 225°C, TC > 25°C) Page 5 NDS-034 Rev. 1, 052413 NPT2010 Typical Performance in 2.15 GHz Narrowband Circuit (CW, VDS=48V, IDQ=600mA, f=2.15GHz, TC=25C, unless otherwise noted) Figure 10: 2-Tone IMD3 vs. POUT vs. IDQ (1MHz Tone Spacing) Figure 11: 2-Tone Gain vs. POUT vs. IDQ (1MHz Tone Spacing) Figure 12: 2-Tone IMD vs. POUT (1MHz Tone Spacing) Page 6 NDS-034 Rev. 1, 052413 NPT2010 100-700 MHz Broadband Circuit (CW, VDS=48V, IDQ=600mA, TC=25C, unless otherwise noted) Figure 13: Component Placement of 100-700 MHz Broadband Circuit for NPT2010 Reference C1 C2, C7 C3, C6 C4, C5 C8 C9 C10, C19 C11 C12 C13 C14 C15, C16 C17 C18 R1 R2 R3, R4 F1 F2, F3 L1 L2 L3 L4, L5 PCB Value 150uF 1uF 0.1uF 0.01uF 270uF 18pF 2.4pF 5.6pF 15pF 220pF 12pF 82pF 4.7pF 2pF 49.9Ω 0.33Ω 24.9Ω Material 73 4:1 Transformer 1.8µH ~50nH 5nH 8nH RO4350, er=3.5, 0.020” Page 7 Manufacturer Nichicon AVX Kemet AVX United Chemi-Con ATC ATC ATC ATC ATC ATC ATC ATC ATC Panasonic Panasonic Panasonic Fair-Rite Anaren Coilcraft 16 AWG Cu Wire Coilcraft Coilcraft Rogers Part Number UPW1C151MED 1210C105KAT2A C1206C104K1RACTU 12061C103KAT2A ELXY 630ELL271MK25S ATC100B180 ATC100B2R4 ATC100B5R6 ATC100B150 600F221FT 600F120FT ATC100B820 ATC100B4R7 ATC100B2R0 ERJ-6ENF49R9V ERJ-6RQFR33V ERJ-1TNF24R9U 2673000801 XMT031B5012 0805LS-182XJLC 5 turn, 0.2"ID A02TJL A03TJL Nitronex NBD-120r1 NDS-034 Rev. 1, 052413 NPT2010 Typical Performance in 100-700 MHz Broadband Circuit (CW, VDS=48V, IDQ=600mA, TC=25C, unless otherwise noted) Figure 14. Electrical Schematic of 100-700 MHz Broadband Circuit for NPT2010 (For RF Tuning details see Component Placement Diagram Figure 13) Figure 16: Performance vs. Frequency (POUT = 49dBm) Figure 15: Performance vs. Frequency (POUT = PSAT) Figure 17: Gain/Drain Efficiency vs. POUT (f = 500MHz) Figure 18: Small Signal s-parameters vs. Frequency Page 8 NDS-034 Rev. 1, 052413 NPT2010 Figure 19 - AC360B-2 Metal-Ceramic Package Dimensions (all dimensions in inches [millimeters]) Function Gate — RF Input Drain — RF Output (Cut lead) Source — Ground (Flange) Page 9 NDS-034 Rev. 1, 052413 NPT2010 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. © Nitronex, LLC 2013 All rights reserved. Page 10 NDS-034 Rev. 1, 052413