PolarHVTM Power MOSFET VDSS = 800 V ID25 = 2 A 6 Ω RDS(on) ≤ IXTA2N80P IXTP2N80P IXTU2N80P IXTY2N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 2 4 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 2 10 100 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 30 Ω 5 V/ns PD TC = 25°C 70 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C S Maximum Ratings TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Weight Mounting torque TO-220 TO-263 TO-252 TO-251 (TAB) TO-220 (IXTP) G (TAB) D S TO-251 (IXTU) G D S (TAB) TO-252 (IXTY) G (TO-220) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) 1.13/10 Nm/lb.in. 3 g 2.5 g 0.35 g 0.4 g Characteristic Values Min. Typ. Max. VGS = 0 V, ID = 250 μA 800 VGS(th) VDS = VGS, ID = 50 μA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 (TAB) G = Gate S = Source V TJ = 125°C 5.0 5.5 V ±100 nA 5 50 μA μA 6.0 Ω z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z © 2006 IXYS All rights reserved D = Drain TAB = Drain Features z BVDSS RDS(on) S Easy to mount Space savings High power density DS99595E(10/06) IXTA2N80P IXTU2N80P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, Note 1 1.4 2.4 S 440 pF 36 pF Crss 4.4 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 35 ns td(off) RG = 30 Ω (External) 53 ns 28 ns 10.6 nC 3.7 nC 4.5 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd TO-263 (IXTA) Outline 1.80 °C/W RthJC RthCS IXTP2N80P IXTY2N80P (TO-220) °C/W 0.25 Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 2 A ISM Repetitive 6 A VSD IF = IS, VGS = 0 V, Pulse test 1.5 V trr IF = 2 A, -di/dt = 100 A/μs, VR = 100 V, VGS = 0 V 650 TO-220 (IXTP) Outline ns Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXTA2N80P IXTU2N80P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 2 3.5 V GS = 10V 8V 7V 1.8 1.6 V GS = 10V 7V 3 2.5 I D - Amperes 1.4 I D - Amperes IXTP2N80P IXTY2N80P 1.2 1 6V 0.8 0.6 6V 2 1.5 1 5V 0.4 0.5 0.2 5V 0 0 0 2 4 6 8 10 12 0 3 6 9 12 15 18 21 24 27 30 V DS - Volts V DS - Volts Fig. 4. R DS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 2 3.2 V GS = 10V 7V 1.8 V GS = 10V 2.8 I D - Amperes 1.4 R DS(on) - Normalized 1.6 6V 1.2 1 0.8 0.6 2.4 2 I D = 2A 1.6 I D = 1A 1.2 0.4 0.8 0.2 5V 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 28 -25 V DS - Volts 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 1A Value vs. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 2.2 2.8 TJ = 125ºC V GS = 10V 2.6 2 1.8 2.4 1.6 2.2 I D - Amperes R DS(on) - Normalized 0 2 1.8 1.6 1.4 1.4 1.2 1 0.8 0.6 1.2 TJ = 25ºC 0.4 1 0.2 0.8 0 0 0.5 1 1.5 2 I D - Amperes © 2006 IXYS All rights reserved 2.5 3 3.5 -50 -25 0 25 50 75 T C - Degrees Centigrade 100 125 150 IXTA2N80P IXTU2N80P IXTP2N80P IXTY2N80P Fig. 8. Transconductance Fig. 7. Input Admittance 4 2.2 TJ = - 40ºC 2 3.5 1.8 3 g f s - Siemens I D - Amperes 1.6 1.4 TJ = 125ºC 25ºC - 40ºC 1.2 1 0.8 0.6 25ºC 2.5 2 125ºC 1.5 1 0.4 0.5 0.2 0 0 4 4.4 4.8 5.2 5.6 6 0 6.4 0.2 0.4 0.6 0.8 V GS - Volts 1 1.2 1.4 1.6 1.8 2 2.2 11 12 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 4.5 10 4 9 V DS = 400V I D = 1A 8 I G = 10mA 7 3 V GS - Volts I S - Amperes 3.5 2.5 2 TJ = 125ºC 1.5 6 5 4 3 TJ = 25ºC 1 2 0.5 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 V SD - Volts 4 5 6 7 8 9 10 Q G - NanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 1,000 10.0 C iss 100 R (th)JC - ºC / W Capacitance - PicoFarads 3 C oss 10 C rss f = 1 MHz 1 0 5 1.0 10 15 20 25 30 35 40 V DS - Volts 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_2N80P (2J) 8-07-06.xls IXTA2N80P IXTU2N80P IXTP2N80P IXTY2N80P TO-252 (IXTY) Outline TO-251 (IXTU) Outline 1. Gate 2. Drain 3. Source Pins: 1 - Gate 3 - Source Dim. Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 .086 0.35 .094 .045 b b1 b2 0.64 0.76 5.21 0.89 1.14 5.46 .025 .030 .205 .035 .045 .215 c c1 0.46 0.46 0.58 0.58 .018 .018 .023 .023 D 5.97 6.22 .235 .245 E e e1 6.35 2.28 4.57 6.73 BSC BSC .250 .090 .180 .265 BSC BSC H 17.02 17.78 .670 .700 L L1 L2 8.89 1.91 0.89 9.65 2.28 1.27 .350 .075 .035 .380 .090 .050 © 2006 IXYS All rights reserved Millimeter Min. Max. 2,4 - Drain Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC