ON NSV60200LT1G 60 v, 4.0 a, low vce(sat) pnp transistor Datasheet

NSS60200L
60 V, 4.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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−60 VOLTS, 4.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
COLLECTOR
3
1
BASE
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
2
EMITTER
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
1
MAXIMUM RATINGS (TA = 25°C)
2
Rating
SOT−23 (TO−236)
CASE 318
STYLE 6
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−60
Vdc
Collector-Base Voltage
VCBO
−80
Vdc
Emitter-Base Voltage
VEBO
−7.0
Vdc
IC
−2.0
A
ICM
−4.0
A
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Collector Current − Continuous
Collector Current − Peak
MARKING DIAGRAM
VG MG
G
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 2
1
1
VG = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
NSS60200LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
NSV60200LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60200L/D
NSS60200L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−60
−
−
−80
−
−
−7.0
−
−
−
−
−0.1
−
−
−0.1
150
150
100
100
−
300
−
−
−
−
−
−
−
−
−
−
−0.017
−0.095
−0.180
−0.170
−0.030
−0.120
−0.270
−0.220
−
−
−0.900
−
−
−0.850
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −0.010 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.010 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
V
V
V
fT
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
−
−
325
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
−
−
62
pF
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
60
ns
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
120
ns
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
400
ns
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
130
ns
SWITCHING CHARACTERISTICS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS60200L
TYPICAL CHARACTERISTICS
0.50
VCE(sat) = 150°C
IC/IB = 10
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.2
0.15
25°C
−55°C
0.1
0.05
0.40
0.35
0.30
0.25
0.20
VCE(sat) = 150°C
25°C
0.15
0.10
0.05
0
0
0.001
0.01
0.1
1.0
10
0.001
IC, COLLECTOR CURRENT (A)
1.0
10
1.1
150°C (5.0 V)
IC/IB = 10
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
0.1
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
400
150°C (2.0 V)
300
250
25°C (5.0 V)
200
25°C (2.0 V)
150
−55°C (5.0 V)
100
−55°C (2.0 V)
0.001
0.01
0.1
1.0
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
10
VBE(on), BASE EMITTER TURN−ON
VOLTAGE (V)
1.0
IC/IB = 100
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.9
0.3
10
1.0
0.9
1.0
0.4
50
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
0.01
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
350
−55°C
IC/IB = 100
0.45
VCE = −2.0 V
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
Figure 6. Base Emitter Turn−On Voltage vs.
Collector Current
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3
10
NSS60200L
TYPICAL CHARACTERISTICS
375
1.0
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
0.8
100 mA
0.6
0.4
300 mA
0.2
325
300
275
250
225
200
175
0
0.01
0.1
1.0
10
Cibo (pF)
350
Cibo, INPUT CAPACITANCE (pF)
VCE (V) IC = 500 mA
10 mA
150
100
0
IB, BASE CURRENT (mA)
2.0
5.0
4.0
6.0
Figure 8. Input Capacitance
10
90
85
80
75
70
65
60
55
50
45
40
35
30
25
20
3.0
VEB, EMITTER BASE VOLTAGE (V)
Figure 7. Saturation Region
Cobo (pF)
100 ms
10 ms
1 ms
1s
1.0
IC (A)
Cobo, OUTPUT CAPACITANCE (pF)
1.0
0.1
Thermal Limit
0.01
Single Pulse Test
at Tamb = 25°C
0
5.0
10
15
20
25
30
0.001
0.1
35
1.0
10
VCB, COLLECTOR BASE VOLTAGE (V)
VCE (Vdc)
Figure 9. Output Capacitance
Figure 10. Safe Operating Area
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4
100
NSS60200L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NSS60200L/D
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