PROCESS CP788X Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.7 x 13.7 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 91,469 PRINCIPAL DEVICE TYPE CMKT5087 BACKSIDE COLLECTOR R0 R1 (29-April 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP788X Typical Electrical Characteristics R1 (29-April 2010) w w w. c e n t r a l s e m i . c o m