ON MMBD7000LT3 Dual switching diode Datasheet

MMBD7000LT1
Preferred Device
Dual Switching Diode
Features
• Pb−Free Packages are Available
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1
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Peak Forward Surge Current
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
CATHODE/ANODE
3
2
CATHODE
SOT−23 (TO−236AB)
CASE 318−08
STYLE 8
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MARKING DIAGRAM
M5C M
1
M5C
M
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Shipping†
Device
Package
MMBD7000LT1
SOT−23
3000 Tape & Reel
SOT−23
(Pb−Free)
3000 Tape & Reel
SOT−23
10,000 Tape & Reel
MMBD7000LT1G
MMBD7000LT3
MMBD7000LT3G
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2005
April, 2005 − Rev. 3
1
Publication Order Number:
MMBD7000LT1/D
MMBD7000LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
V(BR)
100
−
Vdc
IR
IR2
IR3
−
−
−
1.0
3.0
100
0.55
0.67
0.75
0.7
0.82
1.1
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 Adc)
Adc
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125°C)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
−
4.0
ns
Capacitance (VR = 0 V)
C
−
1.5
pF
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
t
IF
trr
10%
t
0.1 F
90%
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
VR
IR
INPUT SIGNAL
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
MMBD7000LT1
CURVES APPLICABLE TO EACH DIODE
I F, FORWARD CURRENT (mA)
100
TA = 85°C
TA = −40°C
10
TA = 25°C
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
40
50
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
I R , REVERSE CURRENT ( A)
10
TA = 150°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
TA = 25°C
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
C D , DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8.0
MMBD7000LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236AB)
CASE 318−08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
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MMBD7000LT1/D
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