TriQuint AH225-S8G 1w high linearity ingap hbt amplifier Datasheet

AH225
1W High Linearity InGaP HBT Amplifier
Applications
Repeaters
Base Station Transceivers
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / CDMA / WiMAX
SOIC-8 Package
Product Features
Functional Block Diagram
400-2700 MHz
15.5 dB Gain at 2140 MHz
+31 dBm P1dB
+46 dBm Output IP3
300 mA Quiescent Current
+5 V Single Supply
MTTF > 100 Years
Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz,
31.5 dBm CW Pout or 23 dBm WCDMA Pout
Lead-free/RoHS-compliant SOIC-8 Package
General Description
Pin Configuration
The AH225 is a high dynamic range driver amplifier in a
low-cost surface-mount package. The InGaP/GaAs HBT
is able to achieve high performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.2 dBm of compressed 1dB power.
The integrated active bias circuitry in the devices enables
excellent stable linearity performance over temperature. It
is housed in a lead-free/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.
Pin #
Symbol
1
2, 4, 5
3
6, 7
Vbias
N/C
RF_in
RF_Out
8
Backside Paddle
Iref
RF/DC GND
The AH225 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH225 is ideal for the final stage
of small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a
wide variety of other applications within the 400 to 2700
MHz frequency band.
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9103
Ordering Information
Part No.
AH225-S8G
Description
1W High Linearity Amplifier
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 1 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min
Typ
Storage Temperature
RF Input Power, CW, 50Ω, T=25°C
Device Voltage,Vcc, Vbias
Device Current
Device Power
-65 to 150 °C
+26 dBm
+8 V
900 mA
+5 W
Vcc
Tcase
TJ (for >106 hours MTTF)
+4.5
-40
+5
Max Units
+5.25
+85
+200
V
C
°
C
°
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 300 mA, T = +25°C, in a tuned application circuit.
Parameter
Conditions
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
WCDMA Channel Power at -50 dBc ACLR
Noise Figure
Vcc, Vbias
Quiescent Current, Icq
Iref
Thermal Resistance (jnc. to case) θjc
Min
Typical
Max
Units
2700
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
mA
°
C/W
400
2140
15.5
18
9.4
+31.2
+46
+21.3
6
+5
300
15
13.3
+30
+43
See Note 1
See Note 2
See Note 3
350
35
Notes:
1. 3OIP measured with two tones at an output power of +19 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the 3OIP using a 2:1 rule. 2:1 rule gives relative value w.r.t. fundamental tone.
2. 3GPP WCDMA, 1±64DPCH, ±5 MHz, no clipping, PAR = 10.2 dB at 0.01% Probability.
3. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7.
Performance Summary Table
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 300 mA, T = +25°C, in an application circuit tuned for each frequency.
Frequency
750
940
1500
1840
1960
2140
2600 MHz
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 [See note 4]
WCDMA Channel Power at -50 dBc ACLR
20.1
14.5
7
+30.4
+45
+21.2
19.8
10.5
8.4
+31
+47.3
+21.7
17
17.2
11
+31.3
+48
+22
15.1
11
10.7
+30.7
+46
+21.6
15.4
15.4
8.3
+31.3
+53.6
+21.7
15.2
18
9.4
+31
+47
+21.4
13.2
19.4
5.5
+30.5
+48.7
+21.3
dB
dB
dB
dBm
dBm
dBm
Notes:
4. OIP3 is measured with two tones at an output power of 20 dBm/tone for 750 MHz, 22 dBm/tone for 940 MHz and 19 dBm/tone for 1490,
1840, 1960, 2140, 2600 MHz application circuits respectively.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 2 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Device Characterization Data
Gain and Max Stable Gain
Input Smith Chart
De-embedded S-Parameters
45
Output Smith Chart
1
1
4GHz
40
Gain (dB)
35
0.8
0.8
MSG (dB)
0.6
0.6
Gain (dB)
30
4GHz
0.4
0.4
25
0.2
0.2
20
0
0
15
-0.75
-0.5 -0.25
0.05
GHz
10
0
0.25
0.5
0.75
-1
-0.75
-0.5
-0.25
0
0.25
0.5
0.050.75
GHz 1
-0.2
-0.2
-0.4
5
-0.4
-0.6
0
-0.6
0
0.5
1
1.5
2
Frequency (MHz)
2.5
3
-0.8
-0.8
-1
Note: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color, Gain (dB). For a tuned circuit for a particular
frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line,
DB [MSG]. The impedance loss plots are shown from 0.05-4 GHz.
S-Parameter Data
Vcc = +5 V, Icq = 300 mA, T = +25°C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-2.90
-165.27
32.12
136.60
-40.91
46.68
-0.94
-74.85
100
-1.57
-171.34
28.59
116.71
-38.86
31.54
-1.66
-113.38
200
-0.99
179.84
23.57
100.17
-37.78
17.25
-1.95
-143.44
400
-0.81
169.25
17.96
86.66
-37.58
7.00
-2.15
-162.82
800
-0.97
152.64
12.56
69.77
-36.47
-0.03
-2.08
-173.99
1000
-1.12
145.10
11.02
62.27
-36.53
-6.84
-2.19
-175.67
1200
-1.25
136.77
10.01
54.20
-35.91
-8.53
-2.20
-177.71
1400
-1.53
128.95
9.29
46.48
-35.54
-14.78
-2.19
-178.63
1800
-2.52
110.16
8.93
27.07
-34.79
-32.76
-2.20
-179.60
2100
-4.69
91.38
9.54
5.44
-33.84
-58.32
-1.92
-179.47
2000
-3.69
98.77
9.27
13.27
-34.06
-50.56
-2.01
179.89
2200
-6.45
86.18
9.79
-4.317
-33.35
-72.56
-1.80
179.99
2400
-13.76
87.27
10.01
-28.04
-33.51
-107.65
-1.25
179.43
2600
-10.27
171.20
8.85
-57.83
-34.02
-157.07
-0.81
175.18
2800
-4.15
159.31
6.56
-84.16
-35.29
156.89
-0.78
171.95
3000
-1.93
143.93
3.19
-104.79
-34.70
116.80
-0.99
167.43
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 3 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Reference Design 700-850 MHz
Notes:
See PC Board Layout, page 20 for more information.
Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 Ω and R7 = no connect.
The primary RF microstrip characteristic line impedance is 50 Ω.
Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
Components shown on the silkscreen but not on the schematic are not used.
The edge of C6 is placed at 70 mils from the edge of AH225 RFout pin pad (3° at 750 MHz).
C5 is placed against the edge of C6.
The edge of R5 is placed at 10 mils from the edge of AH225 RFin pin pad (0.5° at 750 MHz).
C8 is placed against the edge of R5, L2 against C8 and C9 against L2.
Zero ohm jumpers may be replaced with copper traces in the target application layout.
DNP means Do Not Place.
Inductor L3 on Vpd line is critical for linearity performance.
The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
All components are of 0603 size unless stated otherwise.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
Typical Performance 700-850 MHz
Frequency
MHz
700
750
800
850
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 at 20 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
OFDMA Channel Power at 2.5% EVM [2]
Supply Voltage, Vcc
Quiescent Collector Current, Icq
dB
dB
dB
dBm
dBm
dBm
dBm
V
mA
20
12
6
+30.4
+44.1
+20.6
+22.8
20.1
14.5
7
+30.4
+45
+21.2
+23.6
20.2
16
8.6
+30.7
+44.6
+21.4
+23.3
20
13.3
11.5
+30.6
+44
+21
+23.2
+5
300
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 4 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 700-850 MHz
P1dB vs. Frequency
Return Loss vs. Frequency
S21 vs. Frequency
32
0
22
-5
19
31
S22
P1dB (dBm)
Return Loss (dB)
-10
-15
S11
-20
17
-25
600
650
700
750
800
Frequency (MHz)
850
900
29
27
600
650
ACLR vs. Pout vs. Freq
700
750
800
Frequency (MHz)
850
700
900
EVM vs. Pout vs. Freq
3GPP WCDMA,TM1+64DPCH,+5 MHz Offset
-35
30
28
820
2
EVM (%)
700 MHz
750 MHz
800 MHz
850 MHz
-50
-55
700 MHz
750 MHz
800 MHz
850 MHz
1.5
1
40
35
0
22
23
Pout (dBm)
45
0.5
-60
21
T=+25°C
700 MHz
750 MHz
800 MHz
850 MHz
50
-45
850
1 MHz tone spacing
55
2.5
-40
20
760
790
Frequency (MHz)
T=+25°C
T=+25°C
19
730
OIP3 vs. Pout / tone vs. Freq
OFDM,QAM-64,54 Mb/s
3
OIP3 (dBm)
S21 (dB)
20
18
ACLR (dBc)
T=+25°C
T=+25°C
T=+25°C
21
24
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
25
19
20
21
22
Pout (dBm)
- 5 of 21 -
23
24
17
19
21
Pout / tone (dBm)
23
25
Disclaimer: Subject to change without notice
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AH225
1W High Linearity InGaP HBT Amplifier
Application Circuit 920-960 MHz (AH225-S8PCB900)
J3
Vcc=+5V
J5 GND
R7
R6
C7
C7
FB1
R1
Vpd
J3
R6
0
C15
L3
L4
R7
0
C17
R8
C1
R3
J4
10 uF 6032
J4 Vref
C17
D3
C12
DNP
0.1 uF 0805
C1
D3
SM05T1G
C12
1000 pF
L1
C9
U1
C3
R1
120
R3
51
C3
C2
R2
C10
L2
C11
FB1
1000 pF
L4
0
R2
J5
J1
RF
Input
C11
51
0
C10
C9
3.9 pF
22 pF
L3
22 nH
U1
AH225
1
8
2
7
3
6
4
5
L2
3.3 nH
C15
47 pF
L1
33 nH
1008
C3
C6
J2
0
C2
Backside
Paddle
10 pF
RF
Output
5.6 pF
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
See PC Board Layout, page 20 for more information.
Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 Ω and R8 = no connect.
The primary RF microstrip characteristic line impedance is 50 Ω.
Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
Components shown on the silkscreen but not on the schematic are not used.
The edge of L2 is placed at 170 mils from the edge of AH225 RFin pin pad (8.5° at 940 MHz).
The edge of C9 is placed at 80 mils from the edge of AH225 RFin pin pad (4° at 940 MHz).
The edge of C2 is placed at 220 mils from the edge of AH225 RFout pin pad (11° at 940 MHz).
Zero ohm jumpers may be replaced with copper traces in the target application layout. C2 location will need to be re-optimized if
replaced with copper trace.
DNP means Do Not Place.
Inductor L3 on Vpd line is critical for linearity performance.
The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
All components are of 0603 size unless stated otherwise.
Typical Performance 920-960 MHz
Frequency
MHz
920
940
960
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 at 22 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
19.7
9.6
8
+31.1
+46.2
+21.6
9.3
19.8
10.5
8.4
+31
+47.3
+21.7
9.2
+5
300
19.9
10.4
9
+31.1
+48
+21.6
9.3
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 6 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 920-960 MHz
S11 vs. Frequency
S21 vs. Frequency
0
-40°C
+25°C
+85°C
S11 (dB)
-5
20
19
-10
-15
18
17
930
940
Frequency (MHz)
950
960
-20
920
930
940
Frequency (MHz)
950
960
920
Frequency = 940 MHz
18
P1dB (dBm)
Icc (mA)
Gain (dB)
32
500
19
450
400
26
27
28
29
Pout (dBm)
30
31
32
22
24
ACLR vs. Pout vs. Temp
26
28
Pout (dBm)
30
920
32
ACLR vs. Pout vs. Freq
3GPP WCDMA,TM1+64DPCH, ±5 MHz Offset, 940 MHz
-35
30
28
300
25
31
29
350
17
960
T=+25°C
550
20
950
33
T=+25°C
- 40°C
+25°C
+85°C
940
Frequency (MHz)
P1dB vs. Frequency
3GPP WCDMA,TM1±64DPCH,±5 MHz Offset,940 MHz
600
21
930
Icc vs. Pout
Gain vs. Pout vs. Temp
22
-10
-15
-20
920
- 40°C
+25°C
+85°C
-5
S22 (dB)
-40°C
+25°C
+85°C
21
S21 (dB)
S22 vs. Frequency
0
22
940
Frequency (MHz)
950
960
Noise Figure vs. Frequency vs. Temp
3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset
-35
930
12
T=+25°C
10
-45
- 40°C
+25°C
+85°C
-50
-45
920 MHz
940 MHz
960 MHz
-50
-55
21
22
23
24
Output Channel Power (dBm)
25
26
21
22
23
24
Output Channel Power (dBm)
25
35
45
40
23
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
25
45
40
35
30
21
Pout / tone (dBm)
960
T=+25°C
35
30
950
50
OIP3 (dBm)
OIP3 (dBm)
40
940
Frequency (MHz)
1 MHz spacing, 22 dBm / Tone Pout
55
920 MHz
940 MHz
960 MHz
T=+25°C
50
45
19
930
OIP3 vs. Frequency
1 MHz spacing
55
-40°C
+25°C
+85°C
17
920
26
OIP3 vs. Pout/Tone vs. Freq
1 MHz spacing, 940 MHz
50
-40°C
+25°C
+85°C
6
2
20
OIP3 vs. Pout/Tone vs. Temp
55
8
4
-55
20
OIP3 (dBm)
NF (dB)
-40
ACLR (dBc)
ACLR (dBc)
-40
30
17
19
21
Pout / tone (dBm)
- 7 of 21 -
23
25
920
930
940
Frequency (MHz)
950
960
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Reference Design 1475-1510 MHz
J3
Vcc=+5V
J5 GND
R7
R6
C7
C7
R7
0
C17
R8
C12
R6
0
J3
DNP
0.1 uF 0805
D3
SM05T1G
C12
C15
L3
L4
FB1
R1
Vpd
R3
J4
10 uF 6032
J4 Vref
C17
D3
FB1
1000 pF
L1
C9
U1
C6
C5
R2
C10
L2
C11
R1
120
R3
51
C15
C3
L4
0
R2
J5
J1
RF
Input
C11
51
0
C10
C9
1.8 pF
22 pF
L3
22 nH
U1
AH225
1
8
2
7
3
6
4
5
L2
2.2 nH
10 pF
L1
18 nH
1008
C6
10 pF
Backside
Paddle
C3
0
C2
J2
RF
Output
3.3 pF
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
See PC Board Layout, page 20 for more information.
Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 Ω and R8 = no connect.
The primary RF microstrip characteristic line impedance is 50 Ω.
Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
Components shown on the silkscreen but not on the schematic are not used.
The edge of L2 is placed against the edge of C9.
The edge of C9 is placed at 75 mils from the edge of AH225 RFin pin pad (6° at 1490 MHz).
The edge of C2 is placed at 300 mils from the edge of AH225 RFout pin pad (24° at 1490 MHz).
Zero ohm jumpers may be replaced with copper traces in the target application layout.
DNP means Do Not Place.
Inductor L3 on Vpd line is critical for linearity performance.
The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
All components are of 0603 size unless stated otherwise.
Typical Performance 1475-1510 MHz
Frequency
MHz
1475
1490
1510
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 at 19 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
OFDMA Channel Power at 2.5% EVM [2]
Supply Voltage, Vcc
Quiescent Collector Current, Icq
dB
dB
dB
dBm
dBm
dBm
dBm
V
mA
17
17.5
10
+31.4
+47.6
+22
+23.9
17
17.2
11
+31.3
+48
+22
+23.9
+5
300
17
15.2
13
+31
+47
+21.8
+23.7
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 8 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 1475-1510 MHz
S21 vs. Frequency
Return Loss vs. Frequency
18
T=+25°C
32
16
15
14
P1dB (dBm)
-5
Return Loss (dB)
-10
-15
S11
-20
13
1400
1450
1500
Frequency (MHz)
1550
-25
1400
1600
1450
1550
28
1475
1600
-35
EVM (%)
-45
1.5
-50
1
-55
0.5
-60
50
1475 MHz
1490 MHz
1510 MHz
2
21
22
Pout (dBm)
23
24
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
25
1515
45
40
35
0
20
1505
1475 MHz
1490 MHz
1510 MHz
T=+25°C
2.5
1475 MHz
1490 MHz
1510 MHz
1495
Frequency (MHz)
1 MHz Spacing
55
T=+25°C
-40
1485
OIP3 vs. Pout / tone vs. Freq
OFDM, QAM-64, 54 Mb/s, +25 ⁰C
3
T=+25°C
19
30
EVM vs. Pout vs. Freq
ACLR vs. Pout vs. Freq
3GPP WCDMA,TM1+64DPCH,+5 MHz Offset
-30
1500
Frequency (MHz)
31
29
S22
OIP3 (dBm)
S21 (dB)
T=+25°C
T=+25°C
17
ACLR (dBc)
P1dB vs. Frequency
33
0
30
19
20
21
22
Pout (dBm)
- 9 of 21 -
23
24
17
19
21
Pout / tone (dBm)
23
25
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
C7
R7
R6
Reference Design 1805-1880 MHz
C17
D3
C12
J3
C15
L3
L4
FB1
R1
C1
R3
J4
L5 C9
U1
C6
C3
C5
C11
L2
L1
R2
C10
J5
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
See PC Board Layout, page 20 for more information.
Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 Ω and R8 = no connect.
The primary RF microstrip characteristic line impedance is 50 Ω.
Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
Components shown on the silkscreen but not on the schematic are not used.
The edge of C9 is placed at 10 mils from the edge of AH225 RFin pin pad (0.5° at 1840 MHz).
The edge of L2 is placed against the edge of L5.
°
The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin pad (8 at 1840 MHz).
The edge of C5 is placed against the edge of C6.
Zero ohm jumpers may be replaced with copper traces in the target application layout.
DNP means Do Not Place.
Inductor L3 on Vpd line is critical for linearity performance.
The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
All components are of 0603 size unless stated otherwise.
Typical Performance 1805-1880 MHz
Frequency
MHz
1805
1840
1880
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 at 19 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
OFDMA Channel Power at 2.5% EVM [2]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
dB
dB
dB
dBm
dBm
dBm
dBm
dB
V
mA
15.1
12
9.5
+30.8
+46.2
+21.7
+23.6
5.7
15.1
11
10.7
+30.7
+46
+21.6
+23.5
5.7
+5
300
15.1
10
12
+30.6
+45
+21.4
+23.3
5.8
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 10 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 1805-1880 MHz
Return Loss vs. Frequency
S21 vs. Frequency
17
32
-5
15
14
13
31
S22
P1dB (dBm)
Return Loss (dB)
-10
S11
-15
12
1700
1750
1800
1850
1900
Frequency (MHz)
1950
-25
1700
2000
1750
ACLR vs. Pout vs. Freq
1800
1850
1900
Frequency (MHz)
1950
27
1800
2000
EVM (%)
-45
-50
1.5
1
0.5
-60
0
19
20
21
22
Pout (dBm)
23
24
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
25
55
1880 MHz
1840 MHz
1805 MHz
2
-55
1860
1880
T=+25°C
2.5
1880 MHz
1840 MHz
1805 MHz
1840
Frequency (MHz)
1 MHz Spacing
60
T=+25°C
-35
1820
OIP3 vs. Pout / tone vs. Freq
OFDM, QAM-64, 54 Mb/s
3
T=+25°C
-40
29
EVM vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset
-30
30
28
-20
OIP3 (dBm)
S21 (dB)
T=+25°C
T=+25°C
16
ACLR (dBc)
P1dB vs. Frequency
0
T=+25°C
1880 MHz
1840 MHz
1805 MHz
50
45
40
35
30
19
20
21
22
Pout (dBm)
- 11 of 21 -
23
24
17
19
21
Pout / tone (dBm)
23
25
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Application Circuit 1930-1990 MHz (AH225-S8PCB1960)
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
See PC Board Layout, page 20 for more information.
Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 Ω and R8 = no connect.
The primary RF microstrip characteristic line impedance is 50 Ω.
Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
Components shown on the silkscreen but not on the schematic are not used.
The edge of L2 is placed at 135 mils from the edge of AH225 RFin pin pad (14.7° 1960 MHz).
The edge of C9 is placed at 75 mils from the edge of AH225 RFin pin pad (8.4° 1960 MHz).
The edge of C2 is placed at 320 mils from the edge of AH225 RFout pin pad (33° at 1960 MHz).
The edge of C6 is placed at 85 mils from the edge of AH225 RFout pin pad (8.4° at 1960 MHz).
Zero ohm jumpers may be replaced with copper traces in the target application layout.
DNP means Do Not Place.
The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
All components are of 0603 size unless stated otherwise.
Typical Performance 1930-1990 MHz
Frequency
MHz
1930
1960
1990
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 at 19 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
15.2
16
7
+31.2
+51.3
+21.8
5.9
15.4
15.4
8.3
+31.3
+53.6
+21.7
5.9
+5
300
15.6
14.5
9.6
+31.1
+47.5
+21.7
6
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 12 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 1930-1990 MHz
S11 vs. Frequency
16
-5
15
-40°C
+25°C
+85°C
14
13
-5
-40°C
+25°C
+85°C
-10
-15
1940
1950
1960
1970
Frequency (MHz)
1980
-25
1930
1990
1940
ACLR vs. Pout vs. Freq
-25
1930
1990
-50
-60
20
21
22
23
Output Channel Power (dBm)
24
45
40
25
50
45
35
19
ACLR vs. Pout vs Bias Voltage
21
Pout / Tone (dBm)
23
17
25
-35
4.75 V
5V
5.25 V
-55
21
22
23
Pout (dBm)
24
31
4.75 V
5V
5.25 V
30
29
28
1930
-60
20
Device Current (mA)
P1dB (dBm)
-45
25
OIP3 vs. P1dB vs. Frequency
Total device current include Icc, Iref, Ibias, 1960 MHz
400
350
4.75 V
5V
5.25 V
300
250
200
1940
1950
1960
1970
Frequency (MHz)
1980
1990
19
Noise Figure vs. Frequency
1 MHz spacing, 19 dBm / tone Pout
10
55
8
8
50
6
6
35
1930
-40°C
+25°C
+85°C
4
2
40
1940
1950
1960
1970
Frequency (MHz)
1980
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
1990
0
1930
NF (dB)
NF (dB)
OIP3 (dBm)
T=+25°C
45
1940
1950
1960
1970
Frequency (MHz)
- 13 of 21 -
20
21
22
Pout (dBm)
23
24
25
Noise Figure vs. Bias Voltage
10
60
25
T=+25°C
32
-40
21
23
Output Power/Tone (dBm)
Total device current vs. Pout vs. Bias Voltage
450
T=+25°C
-50
19
P1dB vs. Freq vs. Bias Voltage
33
T=+25°C
19
4.75 V
5V
5.25 V
40
17
3GPPWCDMA,TM1+64DPCH,±5 MHz Offset,1960 MHz
-30
1990
1960 MHz, 1MHz spacing
55
30
19
1980
T=+25°C
35
-55
1950
1960
1970
Frequency (MHz)
OIP3 vs. Pout/Tone vs. Bias Voltage
OIP3 (dBm)
-45
1940
60
1930 MHz
1960 MHz
1990 MHz
50
1930 MHz
1960 MHz
1990 MHz
-40
1980
1 MHz spacing
T=+25°C
OIP3 (dBm)
ACLR (dBc)
1950
1960
1970
Frequency (MHz)
55
T=+25°C
-35
-40°C
+25°C
+85°C
-15
OIP3 vs. Pout / Tone vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset
-30
-10
-20
-20
12
1930
ACLR (dBc)
S22 vs. Frequency
0
S22 (dB)
0
S11 (dB)
S21 (dB)
S21 vs. Frequency
17
1980
T=+25°C
F=1960 MHz
4
2
1990
0
4.75
4.85
4.95
5.05
Voltage (V)
5.15
5.25
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Reduced Bias Configurations Application Note
The AH225 can be configured to be operated with lower bias current by varying the Vpd resistor-R1 as highlighted on the
schematic below. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will
slightly lower the ACLR performance of the device as shown below. It is expected that variation of the bias current for other
frequency applications will produce similar performance results. The data below represents data taken from the AH225S8PCB1960 with data taken at 1960 MHz.
R1 (Ω)
Icq (mA)
Gain (dB)
Pdiss (W)
P1dB (dBm)
OIP3 (dBm)1
500
400
300
200
100
15.6
15.4
15.2
14.8
14
2.5
2
1.5
1
0.5
+30.9
+30.9
+30.9
+31.1
+31.4
+48.7
+48.7
+48.5
+43.5
+37.7
56.2
82
120
200
403
Pout (dBm)2
+21.4
+21.6
+21.4
+19.9
+15
Notes:
1. OIP3 is measured with two tones at output power of 19 dBm / tone separated by 1 MHz spacing.
2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. Pout (Channel power) at -50 dBc
ACLR is shown in the table above.
OIP3 vs. Pout / Tone vs. Bias Current
ACLR vs. Pout vs. Bias Current
3GPPWCDMA,TM1+64DPCH,±5 MHz Offset,1960 MHz
-30
T=+25°C
33
T=+25°C
-35
T=+25°C
50
-45
1 0 0m A
2 0 0m A
3 0 0m A
4 0 0m A
5 0 0m A
-50
-55
32
P1dB (dBm)
-40
OIP3 (dBm)
ACLR (dBc)
P1dB vs. Current
1960 MHz, 1 MHz spacing
55
45
40
1 0 0m A
2 0 0m A
3 0 0m A
4 0 0m A
5 0 0m A
35
19
20
21
22
Pout (dBm)
23
24
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
25
30
29
30
-60
31
28
17
19
21
Pout / Tone (dBm)
- 14 of 21 -
23
25
100
200
300
Current (mA)
400
500
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Application Circuit 2110-2170 MHz (AH225-S8PCB2140)
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
See PC Board Layout, page 20 for more information.
Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 Ω and R8 = no connect.
The primary RF microstrip characteristic line impedance is 50 Ω.
Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
Components shown on the silkscreen but not on the schematic are not used.
The edge of L2 is placed at 205 mils from the edge of Ah225 RFin pin pad (23° at 2140 MHz).
The edge of C9 is placed at 80 mils from the edge of AH225 RFin pin pad (9° at 2140 MHz).
The edge of C2 is placed at 205 mils from the edge of AH225 RFout pin pad (23° at 2140 MHz).
The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin pad (9° at 2140 MHz).
Zero ohm jumpers may be replaced with copper traces in the target application layout.
DNP means Do Not Place.
Inductor L3 on Vpd line is critical for linearity performance.
The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
All components are of 0603 size unless stated otherwise.
Typical Performance 2110-2170 MHz
Frequency
MHz
2110
2140
2170
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 at 19 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
Noise Figure
Supply Voltage, Vcc
Quiescent Collector Current, Icq
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
15.2
20
7.7
+31.5
+45.6
+20.9
6
15.5
18
9.4
+31.2
+46
+21.3
6
+5
300
15.6
17
12
+31.1
+46.1
+21
5.9
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 15 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 2110-2170 MHz
S11 vs. Frequency
S21 vs. Frequency
S22 vs. Frequency
0
0
-5
16
-10
S11 (dB)
-40°C
+25°C
+85°C
14
-15
13
2120
2130
2140
2150
Frequency (MHz)
2160
-30
2110
2170
2120
2130
2140
2150
Frequency (MHz)
450
400
28
29
Pout (dBm)
30
31
22
32
24
ACLR vs. Pout vs. Temp
ACLR (dBc)
-45
-40°C
+25°C
+85°C
-50
26
Pout (dBm)
28
-55
8
-45
6
2110 MHz
2140 MHz
2170 MHz
20
21
22
23
Output Channel Power (dBm)
24
25
19
1 MHz spacing, 2140 MHz
20
21
22
23
Channel Output Power (dBm)
24
0
2110
25
OIP3 (dBm)
40
35
21
Pout / Tone (dBm)
23
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
25
2170
2160
2170
T=+25°C
45
40
45
40
35
30
19
2160
50
35
30
2130
2140
2150
Frequency (MHz)
1 MHz spacing, 19 dBm / Tone Pout
55
2110 MHz
2140 MHz
2170 MHz
50
45
17
2120
OIP3 vs. Frequency
1 MHz spacing
55
- 40°C
+25°C
+85°C
50
4
OIP3 vs. Pout/Tone vs. Freq
OIP3 vs. Pout/Tone vs. Temp
55
-40°C
+25°C
+85°C
2
-60
19
2130
2140
2150
Frequency (MHz)
Noise Figure vs. Frequency vs. Temp
-40
-50
2120
10
-55
-60
2170
30
28
2110
30
3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset
-35
-40
2160
31
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, 2140 MHz
-35
2170
29
NF (dB)
Gain (dB)
Icc (mA)
27
2160
T=+25°C
300
13
2150
32
350
14
2140
P1dB vs. Frequency
500
15
2130
33
T=+25°C
- 40°C
+25°C
+85°C
16
26
2120
Frequency (MHz)
P1dB (dBm)
Freq=2140 Mhz
ACLR (dBc)
-25
2110
2170
3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, 2140 MHz
550
17
OIP3 (dBm)
2160
Icc vs. Pout
Gain vs. Pout vs. Temp
18
25
-15
-20
-25
12
2110
-10
-20
OIP3 (dBm)
S21 (dB)
15
-40°C
+25°C
+85°C
-5
-40°C
+25°C
+85°C
S11 (dB)
17
30
17
19
21
Pout / Tone (dBm)
- 16 of 21 -
23
25
2110
2120
2130
2140
2150
Frequency (MHz)
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Reference Design 2500-2700 MHz
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
See PC Board Layout, page 20 for more information.
Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 Ω and R8 = no connect.
The primary RF microstrip characteristic line impedance is 50 Ω.
Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
Components shown on the silkscreen but not on the schematic are not used.
The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin pad (10.5° at 2600 MHz).
The edge of C5 is placed at 10 mils from the edge of AH225 RFout pin pad (1.5° at 2600 MHz).
The edge of R5 is placed at 5 mils from the edge of AH225 RFin pin pad (1° at 2600 MHz).
The edge of C9 is placed at 10 mils from the edge of R5 (1.5° at 2600 MHz).
L2 is placed against the edge of C9.
Zero ohm jumpers may be replaced with copper traces in the target application layout.
DNP means Do Not Place.
The multilayer inductor L3 on Vpd line is critical for linearity performance.
The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
All components are of 0603 size unless stated otherwise.
Typical Performance 2500-2700 MHz
Frequency
MHz
2500
2600
2700
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 at 19 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
OFDMA Channel Power at 2.5% EVM [2]
Supply Voltage, Vcc
Quiescent Collector Current, Icq
dB
dB
dB
dBm
dBm
dBm
dBm
V
mA
12.9
13.3
5.2
+30.4
+50
+21.3
+23
13.2
19.4
5.5
+30.5
+48.7
+21.3
+23
+5
300
12.8
15.8
6.4
+30.2
+44.8
+20.9
+22.7
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
- 17 of 21 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Typical Performance Plots 2500-2700 MHz
S21 vs. Frequency
Return Loss vs. Frequency
15
32
T=+25°C
T=+25°C
12
11
31
P1dB (dBm)
Return Loss (dB)
-10
-15
2500
2600
Frequency (MHz)
-25
2400
2700
2500
2600
Frequency (MHz)
ACLR vs. Pout vs. Freq
T=+25°C
EVM (%)
-45
-50
-55
50
2500 MHz
2600 MHz
2700 MHz
1.5
1
0
19
20
21
22
Pout (dBm)
23
24
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
25
2700
45
40
35
0.5
-60
2650
2500 MHz
2600 MHz
2700 MHz
T=+25°C
2
2600
Frequency (MHz)
1 MHz Spacing
55
T=+25°C
2.5
2500 MHz
2600 MHz
2700 MHz
2550
OIP3 vs. Pout / Tone vs. Freq
OFDM, QAM-64, 54 Mb/s
3
-35
-40
27
2500
2700
EVM vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset
-30
29
28
-20
10
2400
30
S11
OIP3 (dBm)
Gain (dB)
13
T=+25°C
S22
-5
14
ACLR (dBc)
P1dB vs. Frequency
0
30
19
20
21
22
Pout (dBm)
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23
24
17
19
21
Pout / tone (dBm)
23
25
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Pin Description
Pin 1 Reference Mark
Vbias
1
8 Iref
N/C
2
7 RF_Out
RF_In
3
6 RF_Out
N/C
4
5 N/C
Backside Paddle - RF/DC GND
Pin
Symbol
Description
1
2, 4, 5
3
6
7
Vbias
N/C
RF_in
RF_out
RF_out
8
Iref
Backside
Paddle
RF/DC GND
Voltage supply for active bias. Connect to same supply voltage as Vcc.
No internal connection. This pin can be grounded or N/C on PCB.
RF Input. Requires matching for operation.
RF Output and DC supply voltage.
See pin 6.
Reference current into internal active bias current mirror. Current into Iref sets device
quiescent current. Also, can be used as on/off control.
Use recommended via pattern shown on page 20 and ensure good solder attach for
optimum thermal and electrical performance.
Application Board Information
PC Board Layout
Top RF layer is .014” Getek, єr = 4.0, 4 total layers
(0.062” thick) for mechanical rigidity. Metal layers are 1oz copper. Microstrip line details: width = .030”, spacing
= .026”.
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’,
etc. are used as placemarkers for the input and output
tuning shunt capacitors – C8, C5 and C2. The markers
and vias are spaced in .050” increments.
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from company to company, careful process development
is recommended.
For
further
technical
www.TriQuint.com
information,
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
Refer
to
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Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Mechanical Information
Package Information and Dimensions
This package is lead-free/RoHS-compliant. The plating
material on the leads is NiPdAu. It is compatible with
both lead-free (maximum 260 °C reflow temperature)
and lead (maximum 245 °C reflow temperature)
soldering processes.
The AH225 will be marked with an “AH225G”
designator with a lot code marked below the part
designator. The “Y” represents the last digit of the year
the part was manufactured, the “XXXX” is an autogenerated number, and “Z” refers to a wafer number in a
lot batch.
Mounting Configuration
Notes:
1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device
can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”) or equivalent.
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a heat sink. Ensure that the ground / thermal via region contact the heat
sink.
5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heat sink.
6. RF Trace width depends upon the PC board material and construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters (inches). Angles are in degrees.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
AH225
1W High Linearity InGaP HBT Amplifier
Product Compliance Information
Solderability
ESD Information
Compatible with the latest version of J-STD-020, Lead
free solder, 260°.
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes ≥ 1000 V min.
Human Body Model (HBM)
JEDEC Standard JESD22A114-E
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes ≥ 1000 V min.
Charged Device Model (CDM)
JEDEC Standard JESD22C101-C
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
MSL Rating
Level 2 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 2 at 260°C per JEDEC
standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.503.615.9000
+1.503.615.8902
For technical questions and application information:
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®