ON NRVTS12100MFST1G Very low forward voltage trench-based schottky rectifier Datasheet

NTS12100MFS,
NRVTS12100MFS
Very Low Forward Voltage
Trench-based Schottky
Rectifier
http://onsemi.com
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
5,6
1,2,3
MARKING
DIAGRAM
A
1
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
TRENCH SCHOTTKY
RECTIFIERS
12 AMPERES
100 VOLTS
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TH1210
A
Y
W
ZZ
A
C
TH1210
AYWWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
ORDERING INFORMATION
Device
Package
Shipping†
NTS12100MFST1G
NRVTS12100MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTS12100MFST3G
NRVTS12100MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 2
1
Publication Order Number:
NTS12100MFS/D
NTS12100MFS, NRVTS12100MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
Average Rectified Forward Current
(Rated VR, TC = 137°C)
IF(AV)
12
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 134°C)
IFRM
24
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
200
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
−55 to +150
°C
EAS
100
mJ
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
V
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
2.0
−
°C/W
Symbol
Typ
Max
Unit
0.5
0.63
−
0.71
0.44
0.56
−
0.64
3.4
14.5
−
95
mA
3.5
9.2
−
20
mA
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(iF = 5 A, TJ = 125°C)
(iF = 12 A, TJ = 25°C)
vF
(iF = 5 A, TJ = 125°C)
(iF = 12 A, TJ = 25°C)
Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
V
iR
(VR = 70 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
NTS12100MFS, NRVTS12100MFS
TYPICAL CHARACTERISTICS
100
iF, INSTANTANEOUS FORWARD
CURRENT (A)
10
TA = 125°C
1
TA = 150°C
TA = 25°C
TA = −55°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
0.0
TA = 125°C
TA = 25°C
1
TA = 150°C
TA = −55°C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.0
1.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E+00
1.E−01
1.E−01
TA = 150°C
1.E−02
TA = 150°C
1.E−02
TA = 125°C
1.E−03
TA = 125°C
1.E−03
1.E−04
1.E−04
1.E−05
TA = 25°C
1.E−05
TA = 25°C
1.E−06
1.E−06
0
10
20
30
40
50
60
70
80
90
0
100
20
10
30
40
50
60
70
80
90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10k
25
RqJC = 2.0 °C/W
TJ = 25°C
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
10
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1k
100
0.1
1
10
100
20
DC
15
Square Wave
10
5
0
80
90
100
110
120
130
140
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating TO−220AB
http://onsemi.com
3
150
NTS12100MFS, NRVTS12100MFS
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
20
IPK/IAV = 20
18
TJ = 150°C
IPK/IAV = 10
16
14
IPK/IAV = 5
12
10
8
6
Square Wave
4
DC
2
0
0
1
2
3
4
5
6
7
8
9
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
50% Duty Cycle
R(t) (°C/W)
10
1
0.1
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Characteristics
10
R(t) (°C/W)
1
50% Duty Cycle
20%
10%
0.1
5%
2%
Single Pulse
1%
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
http://onsemi.com
4
NTS12100MFS, NRVTS12100MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10 C
SIDE VIEW
8X
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
1.000
e/2
L
1
4
0.965
K
1.330
2X
0.905
2X
E2
PIN 5
(EXPOSED PAD)
G
SOLDERING FOOTPRINT*
DETAIL A
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
L1
M
0.495
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTS12100MFS/D
Similar pages