NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in broadband application design • High efficiency from 14 - 28V • 1.4 °C/W RTH with maximum TJ rating of 200°C • Robust up to 10:1 VSWR mismatch at all phase angles with no damage to the device • Subject to EAR99 export control DC – 2000 MHz 14 – 28 Volt GaN HEMT RF Specifications (CW, 900MHz): VDS = 28V, IDQ = 700mA, TA = 25°C, Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Gain Compression 49.0 50.0 - dBm P1dB Average Output Power at 1dB Gain Compression - 49.0 - dBm GSS Small Signal Gain 18.7 19.7 - dB 57 64 - % h VSWR Drain Efficiency at 3dB Gain Compression 10:1 VSWR at all phase angles No damage to the device Figure 1 - Typical CW Performance in Load-Pull, VDS = 28V, IDQ = 700mA NPT1010 Figure 2 - Typical CW Performance in Load-Pull, VDS = 28V, IDQ = 700mA Page 1 NDS-023 Rev. 3, April 2013 NPT1010 DC Specifications: TA = 25°C Symbol Parameter Min Typ Max Units 100 - - V - 9 18 mA Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 36mA) IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 36mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 700mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, ID = 270mA) - 0.13 0.14 W 19.0 21.0 - A Min Typ Max Units - 1.4 - °C/W ID,MAX Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle) Thermal Resistance Specification Symbol qJC Parameter Thermal Resistance (Junction-to-Case), TJ = 180 °C Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V 180 mA IG Gate Current PT Total Device Power Dissipation (Derated above 25°C) TSTG TJ Storage Temperature Range Operating Junction Temperature HBM Human Body Model ESD Rating (per JESD22-A114) MM Machine Model ESD Rating (per JESD22-A115) CDM NPT1010 Charge Device Model ESD Rating (per JESD22-C101) Page 2 125 W -65 to 150 °C 200 °C 1B (>500V) Class A (≤200V) IV (>1000V) NDS-023 Rev. 3, April 2013 NPT1010 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =700mA, TA=25°C unless otherwise noted Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance Frequency (MHz) ZS (W) ZL (W) PSAT (W) GSS (dB) Drain Efficiency @ PSAT (%) 500 2.8 + j2.2 2.7 + j2.0 100 24.5 71% 900 1.1 - j0.5 1.9 + j0.6 100 21.0 70% 1500 1.1 - j3.6 2.0 - j1.2 100 17.0 63% 2000 1.1 - j4.9 1.9 - j3.8 89 14.5 59% ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Figure 3 - Optimum Impedances for CW Performance. Z0 = 5 Ω 73% 68% 49dBm 49dBm Figure 5 - Load-Pull Contours, 900MHz, PIN = 32.5dBm, ZS = 1.1 - j0.5 Ω Figure 4 - Load-Pull Contours, 500MHz, PIN = 27dBm, ZS = 2.8 + j2.2 Ω NPT1010 Page 3 NDS-023 Rev. 3, April 2013 NPT1010 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =700mA, TA=25°C unless otherwise noted. 63% 53% 48.5dBm 48.5dBm Figure 6 - Load-Pull Contours, 1500MHz, PIN = 29dBm, ZS = 1.1 - j3.6 Ω Figure 7 - Load-Pull Contours, 2000MHz, PIN = 36dBm, ZS = 1.1 - j4.9 Ω Figure 8 - Typical CW Performance Over Voltage in Load-Pull, 900MHz Figure 9 - Typical CW Performance Over Temperature in Nitronex Test Fixture, 900MHz Figure 10 - Quiescient Gate Voltage (VGSQ) Required to Reach IDQ as a Function of Ambient Temperature, VDS = 28V Figure 11 - MTTF of NRF1 Devices as a Function of Junction Temperature NPT1010 Page 4 NDS-023 Rev. 3, April 2013 NPT1010 RF Performance in 500-1000MHz Broadband Application Circuit VDS=28V, IDQ =700mA, TA=25°C unless otherwise noted Figure 12 - Photograph of 500-1000MHz broadband application circuit for NPT1010 Figure 13 - CW Performance in broadband circuit. Measurements (symbols) are connected by a smoothing function (25 °C) Figure 14 - CW drive up curves in broadband circuit. Figure 15 - CW Performance in broadband circuit. Measurements (symbols) are connected by a smoothing function (100 °C) Figure 16 - CW Performance in broadband circuit at different output powers connected by a smoothing function NPT1010 Page 5 NDS-023 Rev. 3, April 2013 NPT1010 RF Performance in 500-1000MHz Broadband Application Circuit VDS=28V, IDQ =700mA, TA=25°C unless otherwise noted Figure 17 - Input and output return loss of the 500-1000MHz broadband application circuit, PIN = -5dBm Table 2: Power, gain, efficiency and temperature rise across frequency in the 500-1000MHz application circiut Frequency (MHz) PSAT (dBm) PSAT (W) Drain Efficiency @ PSAT (%) GSS (dB) TJ,RISE (°C)1 500 48.9 77.8 60 18.1 76 550 49.3 84.9 65 17.4 66 600 49.8 94.8 69 16.6 63 650 48.3 68.2 63 16.1 59 700 48.1 63.8 56 15.5 73 750 48.0 63.1 55 15.1 76 800 49.4 86.9 63 15.1 76 850 49.7 92.5 66 15.4 71 900 50.0 98.9 66 15.7 74 950 49.0 79.4 69 16.0 53 1000 48.3 67.1 67 16.0 49 Note 1: Temperature rise is from junction to case and is calculated from the dissipated power using an RTH value of 1.4°C/W NPT1010 Page 6 NDS-023 Rev. 3, April 2013 NPT1010 Figure 18 - Schematic of 500-1000MHz application board for NPT1010 Figure 19 - Layout of 500-1000MHz application board for NPT1010 NPT1010 Page 7 NDS-023 Rev. 3, April 2013 NPT1010 Table 3: NPT1010 500-1000MHz Application Board Build of Materials Name Value Tolerance Size Vendor Vendor Number C1 100pF 5% .11"X.11" ATC ATC100B101J C2 100pF 5% .11"X.11" ATC ATC100B101J C3, C6 1.0uF 10% 1812 AVX Corp 18121C105KAT2A C4, C7 0.1uF 10% 1206 Kemet C1206C104K1RACTU C5, C8 0.01uF 1% 1206 AVX Corp 12061C103KAT2A C9 150uF 20% 3216(EIA) Nichicon UPW1C151MED C10 270uF 20% 10mm(dia) United Chmi-Con ELXY 630ELL271MK25S C11, C12 56pF 1% .11"X.11" ATC ATC100B560J C14, C15 4.7pF 1% .11"X.11" ATC ATC100B4R7J C13 15pF 1% .11"X.11" ATC ATC100B150J R1 10 ohms 5% 805 Panasonic ERJ-6ENF10R0V R2, R3 0.33 ohms 1% 805 Panasonic ERJ-6RQFR33V R4, R5 7.5 ohms 1% 2512 Stackpole Electron- RHC 2512 10 1% R L1 12nH 5% 805 Coilcraft 0805CS-120XJB L2 4 Turn, 16G, 0.2"ID Copper Wire N Connector Amphenol 172195 nbd-079_Rev1 Rogers Rogers 6010LM 25mil, 1oz, εr = 10.2 BNC Connectors Tyco Electronics 1052566-1 Metric 18-8 SS Socket head Cap Screw M2.5 Thread, 8mm Length, 0.45mm Pitch McMaster Carr 91292A012 Copper Heatsink NPT1010 Page 8 NDS-023 Rev. 3, April 2013 NPT1010 Ordering Information1 Part Number NPT1010B Description NPT1010 in AC360B-2 Metal-Ceramic Bolt-Down Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com Figure 20 - AC360B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm]) NPT1010 Page 9 NDS-023 Rev. 3, April 2013 NPT1010 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. © Nitronex, LLC 2012. All rights reserved. NPT1010 Page 10 NDS-023 Rev. 3, April 2013