INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK25E60X5，ITK25E60X5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.14Ω. ·Enhancement mode: Vth =3.0 to 4.5V (VDS = 10 V, ID=1.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 25 A IDM Drain Current-Single Pulsed 100 A PD Total Dissipation @TC=25℃ 180 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.694 ℃/W 83.3 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK25E60X5，ITK25E60X5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA 600 VGS(th) Gate Threshold Voltage VDS=10V; ID=1.2mA 3.0 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 4.5 V VGS=10V; ID=7.5A 140 mΩ Gate-Source Leakage Current VGS= ±30V;VDS= 0V ±1 μA IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V 100 μA VSDF Diode forward voltage IDR =25A, VGS = 0 V 1.7 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark