® MBR3035PTR thru MBR30200PTR Pb Free Plating Product Pb MBR3035PTR thru MBR30200PTR 30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers TO-3PN/TO-3PB Features Standard MBR matured technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High surge current capability Bottom Side Metal Heat Sink Application Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems Mechanical Data Case: Heatsink TO-3PN/TO-3PB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 6.5 gram approximately Case Case Case Case Series Doubler Negative Positive Common Cathode Common Anode Tandem Polarity Tandem Polarity Suffix "PTS" Suffix "PTR" Suffix "PTD" Suffix "PT" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER MBR MBR MBR MBR MBR SYMBOL 3035 MBR MBR MBR 3045 3050 3060 3090 30100 30150 30200 PTR PTR PTR PTR PTR PTR PTR PTR 100 150 200 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 Maximum RMS voltage VRMS 24 31 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) 30 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 30 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Peak repetitive reverse surge Current (Note 1) IRRM 2 - 0.75 0.85 0.95 VF 0.60 0.65 0.75 0.92 - 0.82 - - 1.02 1.10 - - Maximum instantaneous forward voltage (Note 2) IF=15A, TJ=25℃ IF=15A, TJ=125℃ IF=30A, TJ=25℃ IF=30A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ 1 0.73 IR 1 20 A 0.98 0.5 15 V 1.05 0.1 10 V mA Voltage rate of change,(Rated VR) dV/dt 10,000 V/μs Typical thermal resistance RθJC 1.4 TJ - 55 to +150 ℃/W ℃ TSTG - 55 to +150 ℃ Operating junction temperature range Storage temperature range Note 1: 2.0μs Pulse Width, f=1.0KHz Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle Rev.07C © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ ® MBR3035PTR thru MBR30200PTR RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT (A) 35 AVERAGE FORWARD A CURRENT (A) 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 5 0 0 25 50 75 100 125 150 225 8.3ms Single Half Sine Wave JEDEC Method 200 175 150 125 100 75 50 25 0 1 10 CASE TEMPERATURE (℃) FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG TJ=125℃ TJ=125℃ 10 TJ=25℃ 1 0.1 MBR3035PTR-MBR3045PTR MBR3050PTR-MBR3060PTR MBR3090PTR-MBR30200PTR 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 10 REVERSE LEAKAGE CURRENT (mA) FORWARD CURRENT (A) 100 1 0.1 TJ=25℃ 0.01 1.1 1.2 0 MBR3050PTR-MBR3060PTR MBR3090PTR-MBR30200PTR 100 10 REVERSE VOLTAGE (V) Rev.07C © 2006 Thinki Semiconductor Co., Ltd. 100 TRANSIENT THERMAL IMPEDANCE(℃/W) JUNCTION CAPACITANCE (pF) A MBR3035PTR-MBR3045PTR 1 40 60 80 100 120 140 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG f=1.0MHz Vsig=50mVp-p 0.1 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 1000 MBR3035PTR-MBR3045PTR MBR3050PTR-MBR30200PTR 0.001 FORWARD VOLTAGE (V) 10000 100 NUMBER OF CYCLES AT 60 Hz 100 10 1 0.1 0.01 0.1 1 10 100 T-PULSE DURATION(s) Page 2/2 http://www.thinkisemi.com/