BWTECH MS23N70 Low rds(on) trench technology Datasheet

MS23N70
N-Channel 100-V (D-S) MOSFET
Description
These miniature surface mount MOSFETs utilize High
Cell Density process. Low rDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are lower voltage application, power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
• RoHS compliant package
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Packing & Order Information
3,000/Reel
Graphic symbol
Publication Order Number: [MS23N70]
© Bruckewell Technology Corporation Rev. A -2014
MS23N70
N-Channel 100-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
a
1.5
A
a
1.2
A
10
A
ID
Continuous Drain Current (TA =25°C)
Continuous Drain Current (TA =70°C)
IDM
IS
PD
TJ/TSTG
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
1.6
A
a
1.3
W
a
0.8
W
-55 to +150
°C
Power Dissipation (TA =25°C)
Power Dissipation (TA =70°C)
Operating Junction and Storage Temperature
Thermal Resistance Ratings
Symbol
Parameter
RθJA
Maximum
a
100
a
166
Maximum Junction-to-Ambient C/W (t <= 10 sec)
Maximum Junction-to-Ambient C/W (Steady-State)
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Electrical Characteristics
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS , ID = -250 μA
IGSS
Gate-Body Leakage
VDS = 0 V , VGS = 20 V
IDSS
Zero Gate Voltage Drain Current
ID(on)
On-State Drain Current
r
DS(on)
A
gfs
Forward Tranconductance
VSD
Diode Forward Voltage
Publication Order Number: [MS23N70]
A
A
Typ.
Max.
1
Units
V
±100
VDS = 80 V , VGS = 0 V
1
VDS = 80 V , VGS = 0 V , TJ= 55°C
10
VDS = 5 V , VGS = 10 V
Drain-Source On-Resistance
Min
4
nA
uA
A
VDS = 10 V , ID = 1.2 A
280
VDS = 4.5 V , ID = 1.0 A
355
mΩ
VGS = 15 V , ID = 1.2 A
5
S
IS = 0.8 A , VGS = 0 V
0.75
V
© Bruckewell Technology Corporation Rev. A -2014
MS23N70
N-Channel 100-V (D-S) MOSFET
Dynamic
Symbol
Qg
b
Parameter
Test Conditions
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V , ID = 1.2 A ,
VGS = 4.5 V
VDD = 50 V , ID = 1.2 A ,
VGEN = 10 V , RL = 41.7 Ω ,
RGEN = 6 Ω
VDS = 15 V , VGS =0 V ,
f =1.0MHz
f = 1 MHz
Min
Typ.
Max.
Units
--
3.9
--
nC
--
1.3
--
nC
--
2.0
--
nC
--
4.8
--
ns
--
3.9
--
ns
--
12.7
--
ns
--
3.2
--
ns
--
332
--
pF
--
40
--
pF
--
29
--
pF
0.3
Ω
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Publication Order Number: [MS23N70]
© Bruckewell Technology Corporation Rev. A -2014
MS23N70
N-Channel 100-V (D-S) MOSFET
■Typical
Electrical Characteristics
FIG.1-ON RESISTANCE VS. DRAIN
CURRENT
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VS GATE-TO-SOURCE
FIG.4-DRAIN-TO-SOURCE FORWARD VOLTAGE
VOLTAGE
FIG.5-OUTPUT CHARACTERISTICS
Publication Order Number: [MS23N70]
FIG.6-CAPACITANCE
© Bruckewell Technology Corporation Rev. A -2014
MS23N70
N-Channel 100-V (D-S) MOSFET
■Typical Electrical Characteristics
FIG.7-GAGE CHARGE
FIG.8-NORMALIZED ON-RESISTANCE VS
JUNCTION TMPERATURE
FIG.9-SAFE OPERATING AREA
FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION
FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT
Publication Order Number: [MS23N70]
© Bruckewell Technology Corporation Rev. A -2014
MS23N70
N-Channel 100-V (D-S) MOSFET
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Publication Order Number: [MS23N70]
© Bruckewell Technology Corporation Rev. A -2014
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