CYSTEKEC DTC114GS3 Npn digital transistors (built-in resistors) Datasheet

Spec. No. : C649S3
Issued Date : 2017.01.04
Revised Date : 2017.02.08
Page No. : 1/6
CYStech Electronics Corp.
NPN Digital Transistors (Built-in Resistors)
DTC114GS3
Features
• Built-in bias resistors, R=10kΩ
• Complements the DTA114GS3
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOT-323
DTC114GS3
R=10 kΩ
B : Base C : Collector E : Emitter
Ordering Information
Device
DTC114GS3-0-T1-G
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
DTC114GS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C649S3
Issued Date : 2017.01.04
Revised Date : 2017.02.08
Page No. : 2/6
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj
Tstg
Limits
50
50
5
100
200
625
-55~+150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Electrical Characteristics (Ta=25℃)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Emitter-Base Resistance
Transition Frequency
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
HFE
R
50
50
5
300
30
7
10
500
580
120
13
V
V
V
nA
μA
mV
kΩ
fT
-
250
-
MHz
Test Conditions
IC=50μA
IC =1mA
IE=720μA
VCB=50V
VEB=4V
IC =10mA, IB=0.5mA
VCE=5V, IC =5mA
VCE=10V, IC=5mA,
f=100MHz*
* Transition frequency of the device
Recommended Soldering Footprint
DTC114GS3
CYStek Product Specification
Spec. No. : C649S3
Issued Date : 2017.01.04
Revised Date : 2017.02.08
Page No. : 3/6
CYStech Electronics Corp.
Typical Characteristics
DC Current Gain vs Collector Current
Collector-Emitter Saturation Voltage vs Collector
Current
1000
Collector-Emitter Saturation Voltage--VCE(SAT) (mV)
Current Gain---H FE
1000
Ta=125°C
75°C
25°C
0°C
-40°C
100
10
VCE =5V
Pulsed
Ta=125°C
75°C
25°C
0°C
-40°C
100
IC/IB=20
Pulsed
10
1
0.1
1
10
Collector Current ---I C (mA)
1
100
100
Power Derating Curve
Grounded Emitter Propagation Characteristics
250
100
Ta=
125°C, 75°C, 25°, 0°C, -40°C
Power Dissipation---P D(mW)
Collector Current --- I C (mA)
10
Collector Current ---I C (mA)
10
1
VCE =5V
Pulsed
0.1
0
DTC114GS3
0.2
0.4
0.6
0.8
Base-Emitter Voltage--- VBE(V)
200
150
100
50
0
1
0
50
100
150
200
Ambient Temperature --- TA(℃ )
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C649S3
Issued Date : 2017.01.04
Revised Date : 2017.02.08
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
DTC114GS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C649S3
Issued Date : 2017.01.04
Revised Date : 2017.02.08
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
DTC114GS3
CYStek Product Specification
Spec. No. : C649S3
Issued Date : 2017.01.04
Revised Date : 2017.02.08
Page No. : 6/6
CYStech Electronics Corp.
SOT-323 Dimension
Marking:
3
Q
A1
1
C
K24
Lp
2
detail Z
bp
e1
W
XX
A
B
e
E
D
A
Device Code
Z
Date Code
θ
He
0
v
A
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
2 mm
1
scale
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0078 0.0157
0.0031 0.0059
0.0709 0.0866
0.0453 0.0531
0.0472 0.0551
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.20
0.40
0.08
0.15
1.80
2.20
1.15
1.35
1.20
1.40
DIM
e1
He
Lp
Q
v
w
θ
Inches
Min.
Max.
0.0256*
0.0846 0.0965
0.0105 0.0181
0.0051 0.0091
0.0079
0.0079
0°
8°
Millimeters
Min.
Max.
0.65*
2.15
2.45
0.26
0.46
0.13
0.23
0.2
0.2
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTC114GS3
CYStek Product Specification
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