ON NDDP010N25AZ-1H N-channel power mosfet Datasheet

NDDP010N25AZ
Power MOSFET
250V, 10A, 420mΩ, N-Channel
Features
Electrical Connection
 High Speed Switching
 Low Gate Charge
 ESD Diode-Protected Gate
 100% Avalanche Tested
 Pb-Free, Halogen Free and RoHS Compliance
2,4
Specifications
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage
Symbol
Value
250
V
Gate to Source Voltage
VGSS
30
V
Drain Current (DC)
ID
10
A
IDP
40
PW10s, duty cycle1%
Power Dissipation
Tc=25C
1
PD
52
Junction Temperature
Tj
Storage Temperature
Tstg
Source Current (Body Diode)
IS
Avalanche Energy (Single Pulse) *1
EAS
15.5
TL
260
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
1
Unit
VDSS
Drain Current (Pulse)
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150
 55 to
+150
10
3
Packing Type:TL
A
Marking
W
10N25
C
TL
AZ
C
LOT No.
A
mJ
C
4
4
1 2
Thermal Resistance Ratings
3
Parameter
Symbol
Value
Junction to Case Steady State
RJC
2.40
Junction to Ambient *2
RJA
125
DPAK
Unit
1
2
3
IPAK
C/W
Note : *1 VDD=50V, L=1mH, IAV=5A (Fig.1)
*2 Insertion mounted
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Ordering & Package Information
Device
NDDP010N25AZT4H
NDDP010N25AZ-1H
© Semiconductor Components Industries, LLC, 2014
November 2014 - Rev. 2
Package
DPAK(TP-FA),
SC-63, TO-252
IPAK(TP),
SC-64, TO-251
Shipping
Memo
700pcs. / reel
Pb-Free
and
Halogen Free
500pcs. / bag
1
Publication Order Number :
NDDP010N25AZ/D
NDDP010N25AZ
Electrical Characteristics at Ta  25C
Value
Parameter
Symbol
Conditions
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=250V, VGS=0V
250
1
A
V
Gate to Source Leakage Current
IGSS
VGS=±24V, VDS=0V
10
A
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
4.5
V
Forward Transconductance
gFS
VDS=10V, ID=5A
6.5
Static Drain to Source On-State Resistance
RDS(on)
ID=5A, VGS=10V
320
420
m
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
2.5
S
980
pF
80
pF
Crss
25
pF
Turn-ON Delay Time
td(on)
18
ns
Rise Time
tr
26
ns
Turn-OFF Delay Time
td(off)
44
ns
Fall Time
tf
31
ns
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
IS=10A, VGS=0V
0.96
Reverse Recovery Time
trr
See Fig.3
130
ns
Reverse Recovery Charge
Qrr
IS=10A, VGS=0V, di/dt=100A/s
540
nC
VDS=20V, f=1MHz
See Fig.2
VDS=125V, VGS=10V, ID=10A
16
nC
4.7
nC
4.6
nC
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.3 Reverse Recovery Time Test Circuit
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Fig.2 Switching Time Test Circuit
NDDP010N25AZ
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NDDP010N25AZ
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NDDP010N25AZ
Package Dimensions
NDDP010N25AZT4H
DPAK / TP-FA
unit : mm
1:Gate
2:Drain
3:Source
4:Drain
Recommended
Soldering Footprint
7.0
7.0
2.5
2.0
1.5
2.3
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5
2.3
NDDP010N25AZ
Package Dimensions
NDDP010N25AZ-1H
IPAK / TP
unit : mm
1:Gate
2:Drain
3:Source
4:Drain
Note on usage : Since the NDDP010N25AZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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