IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlleddiode Features: HighspeedH3technologyoffers: •Ultra-lowlossswitchinglossesthankstoKelvinemitterpin packageincombinationwithHighspeedH3technology •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeatTvj=175°C •Easyparallelingcapabilityduetopositivetemperature coefficientinVCE(sat) •LowEMI •LowGateChargeQG •Verysoft,fastrecoveryfullcurrentanti-paralleldiode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •IndustrialUPS •Charger •EnergyStorage •Three-levelSolarStringInverter ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IKY75N120CH3 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 1200V 75A 2V 175°C K75MCH3 PG-TO247-4-2 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=134°C IC 150.0 75.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 300.0 A Turn off safe operating area VCE≤1200V,Tvj≤175°C,tp=1µs - 300.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 150.0 75.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 300.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V Short circuit withstand time VGE=15.0V,VCC≤600V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=175°C tSC PowerdissipationTC=25°C PowerdissipationTC=134°C Ptot 938.0 256.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 10 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,1) junction - case Rth(j-C) - - 0.16 K/W Diode thermal resistance,1) junction - case Rth(j-C) - - 0.28 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. Datasheet 3 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - V VGE=15.0V,IC=75.0A Tvj=25°C Tvj=175°C - 2.00 2.50 2.35 - V - 1.90 1.85 2.30 - V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=75.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=1.88mA,VCE=VGE 5.1 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C - 5000 450 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=75.0A - 26.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 4856 - - 505 - - 290 - - 370.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=75.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 38 - ns - 32 - ns - 303 - ns - 32 - ns - 3.40 - mJ - 2.90 - mJ - 6.30 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=600V,IC=75.0A, VGE=0.0/15.0V, RG(on)=6.0Ω,RG(off)=6.0Ω, Lσ=70nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=600V, IF=75.0A, diF/dt=1200A/µs dirr/dt - 292 - ns - 4.90 - µC - 41.0 - A - -585 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 38 - ns - 35 - ns - 400 - ns - 68 - ns - 6.10 - mJ - 6.00 - mJ - 12.10 - mJ - 538 - ns - 13.80 - µC - 60.0 - A - -360 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=600V,IC=75.0A, VGE=0.0/15.0V, RG(on)=6.0Ω,RG(off)=6.0Ω, Lσ=70nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=600V, IF=75.0A, diF/dt=1200A/µs dirr/dt 5 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 1000 900 100 800 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] not for linear use 10 1 700 600 500 400 300 200 100 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 160 300 VGE=20V 17V 140 120 100 80 60 40 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 250 11V 200 9V 7V 150 5V 100 50 20 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Datasheet 0 1 2 3 4 5 6 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 6 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 300 300 VGE=20V Tvj = 25°C Tvj = 175°C 17V 250 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 250 11V 200 9V 7V 150 5V 100 200 150 100 50 0 50 0 1 2 3 4 5 0 6 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 6 8 10 12 14 16 18 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 4.5 1000 IC = 38A IC = 75A IC = 150A 4.0 td(off) tf td(on) tr 3.5 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 4 3.0 2.5 2.0 100 10 1.5 1.0 0.5 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 30 60 90 120 150 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175°C,VCE=600V, VGE=0/15V,RG=6Ω,Dynamictestcircuitin Figure E) Datasheet 7 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT td(off) tf td(on) tr 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 0 5 td(off) tf td(on) tr 10 15 20 25 30 35 100 10 40 25 RG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=600V, VGE=0/15V,IC=75A,Dynamictestcircuitin Figure E) 100 125 150 175 35 typ. min. max. 7 Eoff Eon Ets 30 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=75A,RG=6Ω,Dynamictestcircuitin Figure E) 8 6 5 4 3 25 20 15 10 2 1 50 Tvj,JUNCTIONTEMPERATURE[°C] 5 25 50 75 100 125 150 0 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1mA) Datasheet 0 30 60 90 120 150 IC,COLLECTORCURRENT[A] Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=600V, VGE=0/15V,RG=6Ω,Dynamictestcircuitin Figure E) 8 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 30 14 Eoff Eon Ets 12 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 25 20 15 10 10 8 6 4 5 0 Eoff Eon Ets 2 0 5 10 15 20 25 30 35 0 40 25 RG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=600V, VGE=0/15V,IC=75A,Dynamictestcircuitin Figure E) 150 175 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 125 VCC=240V VCC=960V 12 10 8 6 4 12 10 8 6 4 2 2 450 500 550 600 650 700 750 0 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=0/15V, IC=75A,RG=6Ω,Dynamictestcircuitin Figure E) Datasheet 100 16 Eoff Eon Ets 14 0 400 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=75A,RG=6Ω,Dynamictestcircuitin Figure E) 18 16 50 Tvj,JUNCTIONTEMPERATURE[°C] 0 50 100 150 200 250 300 350 400 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=75A) 9 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 600 C,CAPACITANCE[pF] 1E+4 IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] Cies Coes Cres 1000 100 0 5 10 15 20 25 500 400 300 200 100 0 30 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 11 12 13 14 15 16 17 18 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤600V,Tvj≤175°C) 45 D = 0.5 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] tSC,SHORTCIRCUITWITHSTANDTIME[µs] 40 35 30 25 20 15 10 5 0.1 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 0.001 i: 1 2 3 4 5 ri[K/W]: 0.02275 0.047736 0.08788 2.0E-3 2.7E-4 τi[s]: 3.8E-4 2.7E-3 0.019881 0.505051 12.95671 0 10 12 14 16 18 20 1E-4 1E-6 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤600V,startatTvj≤175°C) Datasheet 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. IGBTtransientthermalresistance (D=tp/T) 10 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 1000 0.2 0.1 900 0.05 0.02 0.01 single pulse 0.01 0.001 1E-4 1E-6 1E-5 1E-4 0.001 0.01 0.1 800 700 600 500 400 300 200 100 i: 1 2 3 4 5 ri[K/W]: 0.01104 0.10889 0.1573 2.8E-3 3.0E-4 τi[s]: 3.6E-4 2.7E-3 0.01681 0.44863 12.11241 0 400 1 tp,PULSEWIDTH[s] 800 1000 1200 1400 90 Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A 80 Irr,REVERSERECOVERYCURRENT[A] 16 14 12 10 8 6 4 2 Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A 70 60 50 40 30 20 10 600 800 1000 1200 1400 0 400 1600 600 800 1000 1200 1400 diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=600V) Figure 24. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=600V) Datasheet 1600 Figure 22. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=600V) 18 0 400 600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Qrr,REVERSERECOVERYCHARGE[µC] Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A 0.1 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] D = 0.5 11 1600 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT 0 300 Tvj = 25°C, IF = 75A Tvj = 175°C, IF = 75A Tvj = 25°C Tvj = 175°C 250 -200 IF,FORWARDCURRENT[A] dIrr/dt,diodepeakrateoffallofIrr[A/µs] -100 -300 -400 -500 -600 -700 200 150 100 -800 50 -900 -1000 400 600 800 1000 1200 1400 0 1600 diF/dt,DIODECURRENTSLOPE[A/µs] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=600V) Figure 26. Typicaldiodeforwardcurrentasafunction offorwardvoltage 3.5 IF = 38A IF = 75A IF = 150A VF,FORWARDVOLTAGE[V] 3.0 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Datasheet 12 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT PG-TO247-4-2 M D3 A E A2 E2 D2 D4 D D1 R b2 N b4 L1 b6 2x H L E3 E1 1 2 3 e1 4 b e 4 3 2 1 A1 b7 c PACKAGE SURFACE ROUTE BETWEEN PIN 1 & PIN 2 WILL BE 5.1mm MIN. DIMENSION A A1 A2 b b2 b4 b6 b7 c D D1 D2 D3 D4 E E1 E2 E3 e e1 H L L1 M N R Datasheet MILLIMETERS MIN. MAX. 5.1 4.9 2.31 2.51 1.9 2.1 1.16 1.29 1.36 1.49 2.29 2.16 1.45 1.16 1.16 1.65 0.66 0.59 21.1 20.9 22.5 22.3 16.55 15.95 1.35 1 1.6 1.8 15.7 15.9 3.9 4.1 13.1 13.5 2.58 2.78 2.54 5.08 0.8 1 19.8 20.1 2.55 2.85 0.97 1.57 3.24 3.44 1.9 2.1 ALL b... AND c DIMENSIONS INCLUDING PLATING EXCEPT AREA OF CUTTING DOCUMENT NO. Z8B00182798 REVISION 01 SCALE 2:1 0 5 10mm EUROPEAN PROJECTION ISSUE DATE 23.09.2016 13 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.2 2017-06-09 IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT RevisionHistory IKY75N120CH3 Revision:2017-06-09,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-04-26 Final data sheet 2.2 2017-06-09 Update Figure 6 Datasheet 15 V2.2 2017-06-09 TrademarksofInfineonTechnologiesAG µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™, CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™, EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™, HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™, ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™, PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™, StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™ TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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