LRC LBAS16TW1T1G Surface mount fast switching diode Datasheet

LESHAN RADIO COMPANY, LTD.
LBAS16TW1T1G
SURFACE MOUNT FAST SWITCHING DIODE
LBAS16TW1T1G
S-LBAS16TW1T1G
Features
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Also Available in Lead Free Version
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Pb-Free package is available
DEVICE MARKING
LBAS16TW1T1G=KA2
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Value
Unit
VRM
100
V
VRRM
VRWM
VR
75
V
VR(RMS)
53
V
Forward Continuous Current (Note 1)
IFM
300
mA
Average Rectified Output Current (Note 1)
IO
150
mA
IFSM
2.0
1.0
A
RMS Reverse Voltage
Non-Repetitive Peak Forward Surge Current
@ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Pd
200
mW
RqJA
625
°C/W
Tj , TSTG
-65 to +150
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
V(BR)R
75
¾
V
IR = 1mA
Forward Voltage (Note 2)
VF
¾
0.715
0.855
1.0
1.25
V
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
Reverse Current (Note 2)
IR
¾
1.0
50
30
25
mA
mA
mA
nA
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
Total Capacitance
CT
¾
2.0
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
¾
4.0
ns
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Reverse Breakdown Voltage (Note 2)
Notes:
Test Condition
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LBAS16TW1T1G, S-LBAS16TW1T1G
10
I R , REVERSE CURRENT (µA)
T A = 150°C
T A= 85°C
10
TA= – 40°C
1.0
T A= 25°C
0.1
T A = 125°C
1.0
T A = 85°C
0.1
T A = 55°C
0.01
T A = 25°C
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
50
0.68
C D , DIODE CAPACITANCE (pF)
I F , FORWARD CURRENT (mA)
100
0.64
0.60
0.56
0.52
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LBAS16TW1T1G, S-LBAS16TW1T1G
SC−88
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
DIM
A
A1
A3
b
C
D
E
e
L
HE
4
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
GENERIC
MARKING DIAGRAM*
A3
C
6
6
XX M
A1
L
1
XX
OR
M
A
1
XX = Specific Device Code
M = Date Code
Rev.O 3/3
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