BWTECH MSF7N60 600v n-channel mosfet Datasheet

MSF7N60
600V N-Channel MOSFET
Description
The MSF7N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Open Framed Power Supply
• Adapter
• STB
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
7.0
A
Drain Current -Continuous (TC=100°C)
4.4
A
IDM
Drain Current Pulsed
21
A
EAS
Single Pulsed Avalanche Energy
48
mJ
IAR
Avalanche Current
7.0
A
ID
Publication Order Number: [MSF7N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N60
600V N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
EAR
Repetitive Avalanche Energy
3.1
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
Total Power Dissipation (TC = 25 °C)
31
W
0.25
W/°C
-55 to +150
°C
300
°C
260
°C
150
°C
PD
TSTG
TL
TPKG
TJ
Derating Factor above 25 °C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Storage Temperature
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS≤7A, VDD=50V, L=7mH, VG=10V, starting TJ=+25°C.
3. ISD≤7A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal characteristics
Symbol
Parameter
Max.
RθJc
Junction-to-Case
2.6
RθJA
Junction-to-Ambient
62.5
Units
°C/W
Off Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
VGS(th)
VDS = VGS, ID = 250μA
2.0
--
4.0
V
*RDS(ON)
VGS = 10 V , ID = 3.5 A
--
0.85
1.2
Ω
BVDSS
VGS = 0 V , ID = 250μA
600
--
--
V
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
--
0.6
--
V/°C
--
--
--
--
±100
nA
Min
Typ.
Max.
Units
--
1482
--
pF
--
121.7
--
pF
--
14
--
pF
IDSS
IGSS
VDS = 600 V , VGS = 0 V
VDS = 480 V , VC= 125°C
VGS = ±30
Dynamic Characteristics
Symbol
Test Conditions
CISS
COSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
CRSS
Publication Order Number: [MSF7N60]
1
10
uA
© Bruckewell Technology Corporation Rev. A -2014
MSF7N60
600V N-Channel MOSFET
Dynamic Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
--
28
37
nC
--
4.7
--
nC
Qgd
--
11
--
nC
td(on)
--
10
30
ns
Qg
Qgs
VDG = 300 V,ID = 7 A,
VGS = 10 V
tr
VDS = 400 V, ID = 7 A,
--
35
80
ns
td(off)
RG = 25 Ω , VGS = 10 V
--
45
100
ns
--
40
90
ns
Min
Typ.
Max.
Units
--
1500
2010
pF
--
145
190
pF
--
13
20
pF
Min
Typ.
Max.
Units
tf
Dynamic Characteristics
Symbol
Test Conditions
CISS
COSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
CRSS
Source-Drain Diode Characteristics
Symbol
Test Conditions
IS
VG = VD = 0
--
--
7
ISM
VS = 13 V
--
--
28
VSD
IS = 7 A , VGS = 0 V
--
--
1.4
V
--
350
--
ns
--
3.3
--
uC
trr
Qrr
IF = 7 A ,VGS = 0 V , dIF/dt=100A/μs
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Publication Order Number: [MSF7N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF7N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N60
600V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF7N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N60
600V N-Channel MOSFET
■Characteristics Test Circuit & Waveform
Fig 12. Resistive Switching Test Circuit & Waveforms
Fig 13. Gate Charge Test Circuit & Waveform
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Publication Order Number: [MSF7N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N60
600V N-Channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MSF7N60]
© Bruckewell Technology Corporation Rev. A -2014
MSF7N60
600V N-Channel MOSFET
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Publication Order Number: [MSF7N60]
© Bruckewell Technology Corporation Rev. A -2014
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