BGA8V1BN6 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Features • Operating frequencies: 3.3 - 3.8 GHz • Insertion power gain: 15.0 dB • Insertion Loss in bypass mode: 5.3 dB • Low noise figure: 1.2 dB • Low current consumption: 4.2 mA • Multi-state control: OFF-, bypass- and high gain-Mode • Ultra small TSNP-6-2 leadless package • RF input and RF output internally matched to 50 Ohm • No external components necessary 0.7 x 1.1 mm2 Application The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the basestation the bypass mode can be activated reducing current consumption. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Block diagram VCC GPIO1 AI GPIO2 AO ESD GND BGA8V1BN6_Blockdiagram.vsd Data Sheet www.infineon.com Revision 3.3 (min/max) 2017-09-14 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Data Sheet 2 Revision 3.3 (min/max) 2017-09-14 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Features 1 Features • Insertion power gain: 15.0 dB • Insertion Loss in bypass mode: 5.3 dB • Low noise figure: 1.2 dB • Low current consumption: 4.2 mA • Operating frequencies: 3.3 - 3.8 GHz • Multi-state control: OFF-, bypass- and high gain-Mode • Supply voltage: 1.6 V to 3.1 V • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) • B9HF Silicon Germanium technology • RF input and RF output internally matched to 50 Ohm • No external SMD components necessary • 2kV HBM ESD protection (including AI-pin) • Pb-free (RoHS compliant) package VCC GPIO1 AI GPIO2 AO ESD GND BGA8V1BN6_Blockdiagram.vsd Figure 1 Block Diagram Product Name Marking Package BGA8V1BN6 X TSNP-6-2 Data Sheet 3 Revision 3.3 (min/max) 2017-09-14 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Features Description The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.3 GHz to 3.8 GHz. The LNA provides 15.0 dB gain and 1.2 dB noise figure at a current consumption of 4.2 mA in the application configuration described in Chapter 4. In bypass mode the LNA provides an insertion loss of 5.3 dB. The BGA8V1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode). Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GPIO2 Control pin 2 2 VCC DC supply 3 AO LNA output 4 GPIO1 Control pin 1 5 GND Ground 6 AI LNA input Control Table Table 2 Control Table GPIO1 GPIO2 Low Low High Low Bypass mode Low High High gain mode High High OFF Data Sheet 4 Revision 3.3 (min/max) 2017-09-14 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Maximum Ratings 2 Maximum Ratings Table 3 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Voltage at pin VCC VCC -0.3 – 3.6 V 1) Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at GPIO pins VGPIO -0.3 – VCC + 0.3 V – Voltage at pin GND VGND -0.3 – 0.3 V – Current into pin VCC ICC – – 16 mA – RF input power PIN – – +25 dBm – Total power dissipation, TS < 148 °C2) Ptot – – 60 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -65 – 150 °C – ESD capability all pins VESD_HBM - - 2000 V according to JS-001 1) All voltages refer to GND-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. Data Sheet 5 Revision 3.3 (min/max) 2017-09-14 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Electrical Characteristics 3 Electrical Characteristics Table 4 Electrical Characteristics1) TA = 25 °C, VCC = 2.8 V, VGPIOx,ON = 2.8 V, VGPIOx,OFF = 0 V, f = 3300 - 3800 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Supply voltage VCC 1.6 2.8 3.1 V – Control voltages VGPIOx 1.0 – VCC V High 0 – 0.4 V Low – 4.2 5.2 mA High gain mode – 85 120 µA Bypass mode – 0.1 2 µA OFF-Mode 13.0 15.0 17.0 dB High gain mode -6.8 -5.3 -3.8 dB Bypass mode – 1.2 1.7 dB High gain mode – 5.3 6.8 dB Bypass mode 10 15 – dB High gain mode 10 16 – dB Bypass mode 8 11 – dB High gain mode 3 5 – dB Bypass mode 20 28 – dB High gain mode 6.8 5.3 – dB Bypass mode – 0.3 3 µs High gain- to bypass-mode – 3 5 µs Bypass- to High gain-mode -19 -15 – dBm High gain mode -7 -3 – dBm Bypass mode -8 -3 – dBm High gain mode 1 6 – dBm Bypass mode -6 – 6 ° Part to part variation after compensation in Base Band with constant value >1 – – Supply current ICC Insertion power gain f = 3500 MHz 2) 2 |S21| Noise figure f = 3500 MHz, ZS = 50 Ω NF Input return loss3) f = 3500 MHz RLIN Output return loss f = 3500 MHz 3) 3) Reverse isolation f = 3500 MHz 4)6) Transient time RLOUT 2 1/|S12| tS Inband input 1dB-compression IP1dB point, f = 3500 MHz3) rd Inband input 3 -order intercept point3)5) f1 = 3500 MHz, f2 = f1 +/- 1 MHz IIP3 Phase discontinuity between ON- and bypass-mode3) Stability6) 1) 2) 3) 4) 5) 6) k f = 20 MHz ... 10 GHz Based on the application described in chapter 4 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain Input power HG = -30 dBm for each tone; Input power BP = -10 dBm for each tone Guaranteed by device design; not tested in production Data Sheet 6 Revision 3.3 (min/max) 2017-09-14 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Application Information 4 Application Information Application Board Configuration N1 BGA8V1BN6 GPIO1 GND AO, 3 GPIO1, 4 RFout VCC VCC, 2 GND, 5 C1 (optional) RFin C2 GPIO2, 1 AI, 6 GPIO2 BGA8V1BN6_Schematic.vsd Figure 2 Application Schematic BGA8V1BN6 Table 5 Bill of Materials Name Value Package Manufacturer Function C1 (optional) ≥ 1nF 0402 Various Input matching C2 ≥ 1nF 0402 Various RF bypass 1) N1 BGA8V1BN6 TSNP-6-2 Infineon SiGe LNA 1) RF bypass recommended to mitigate power supply noise Note: No external DC blocking capacitor at RFin is required in typical applications as long as no DC is applied. A list of all application notes is available at http://www.infineon.com/ltelna Data Sheet 7 Revision 3.3 (min/max) 2017-09-14 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Package Information Package Information Top view Bottom view +0.025 0.375 -0.015 0.7 ±0.05 A 0.2 ±0.05 1) 6x 0.1 A 3 4 2 5 1 6 0.2 ±0.05 1) 6x 1.1 ±0.05 2 x 0.4 = 0.8 0.02 MAX. STANDOFF 0.4 Pin 1 marking B 0.1 B 5 1) Dimension applies to plated terminals Figure 3 TSNP-6-2-PO V01 TSNP-6-2 Package Outline (top, side and bottom views) NSMD 0.4 0.4 0.25 0.25 0.4 0.4 0.25 0.25 (stencil thickness 100 µm) Copper Stencil apertures Solder mask TSNP-6-2-FP V01 Figure 4 Footprint Recommendation TSNP-6-2 1 Type code Monthly data code Pin 1 marking TSNP-6-2-MK V01 Figure 5 Data Sheet Marking Layout (top view) 8 Revision 3.3 (min/max) 2017-09-14 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Package Information 1.25 Pin 1 marking 8 0.5 2 0.85 TSNP-6-2-TP V01 Figure 6 Data Sheet Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) 9 Revision 3.3 (min/max) 2017-09-14 BGA8V1BN6 Low Noise Amplifier for LTE Band 42 and Band 43 Revision History Page or Item Subjects (major changes since previous revision) Revision 3.3 (min/max), 2017-09-14 5 Update max. RF input power 11 Update trademark information Data Sheet 10 Revision 3.3 (min/max) 2017-09-14 Please read the Important Notice and Warnings at the end of this document Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2017-09-14 Published by Infineon Technologies AG 81726 Munich, Germany © 2017 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: [email protected] Document reference Doc_Number IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.