NJSEMI MJE205K Medium-power npn silicon transistor Datasheet

<^£.mL-C.onaactoi ^Pioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJE205 (SILICON)
MJE205K
MEDIUM-POWER NPN SILICON TRANSISTORS
5 AMPERE
POWER TRANSISTORS
. . . for use as an output device in complementary audio amplifiers
up to 20-Watts music power per channel.
NPN SILICON
• High DC Current Gain -hpE " 25-100@lc
• Thermopad High-Efficiency Compact Package
SO VOLTS
66 WATTS
•Complementary to PNP MJE 105, MJE105K
•Choice of Packages - MJE205-Case 90
MJE205K-Case 199
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
CollKtor-BaM Voltage
Em. Hot-Bin Voltage
Collector Currant
flaw Currant
Total Dnict Diuipation STc-25°C
Otrtlt above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
vceo
VCB
VEB
ic
SO
Vdc
SO
4.0
Vdc
5.0
Adc
'B
2.5
Adc
"ot
65
0.522
-55 to +150
w/°c
°c
TJ.T,tB
Vdc
VVMtl
CASE 90-05
THERMAL CHARACTERISTICS
Ctiaracterittlc
Thermal Reiiitance, Junction to Case
MJE 205
Symbol
Max
Unit
»JC
1.92
°C/W
tSaf* Ar«« Curwt ira indicated by Fiflure 1 . Both Hmltl ar« applicabl* and muff b« obHrwd.
MJE2O6K
ELECTRICAL CHARACTERISTICS (Tc = 25°C unlan otherwi» noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Collector-Emitter Breakdown Voltaget
(1C - lOOmAdc, IB -01
Collector Cutoff Current
(V CB -50Vdi;. IE -0)
(VCB » SO Vdc, IE - 0, TC- 15O°C)
Emitter Cutoff Current
(vB£ - 4.0 vdc, ic - 01
BVCEOt
|
Min
Mix
Unit
Vdc
so
mAdc
'C80
-
IEBO
0.1
2.0
niAdc
_
1.0
25
100
-
1.2
CASE 199-04
ON CHARACTERISTICS
DC Current Gain
|lc - 2.0 Adc, Vce - 2.0 Vdcl
Bin-Emitter Voltage
He • 2.0 Adc, VCE - 2.0 Vdc)
HFE
-
VBE
Vdc
tPuluTtil: PulHWMth<300M>. Duty Cycle<2.0X.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
MJE205
MJE205K
—t-U
ff
— B-~,
M
V
M
T
r
Q
S
A
ff
t
U
t
^
M
1
Q
Ml RIB
i:
K
Jt°
-HHcl—-
PIN 1. EMITTER
2. COLLECTOR
3 BASE
"It
DIM
|
1
Q
R
U
Mil LiMCTERS
MAX
Ml 1
INC 4ES
MIN
MAX
^i±^
mr— MIr"
STYL E l :
PI 1. BASE
2. COLLECTOR
3. EMITTER
[ gMM \—, C
DIM
MIN
MAX
INlHES
MAX
MIN
A
B
1608
16.33
12.83
0.633 0.643
0.495 U.bllb
0.845
0.505
"
0.125
124 JLS«L
3.76
0.138
0.16
BSC
2.92
0.105
0.135
H
0.864
0.034
0.645
16. 13
12.S7
3. 18
1.09
3.51
4.2
2.E7
0,813
15.11 ^
16.38
12.10
4.70
191
6.22
4.35
2.16
0.185 0.13S
DM U.U8S
6.48
0.245
O.E35
0.496
3.43
16.38
JU-J
MILLIMETERS
-it
0.032
0.595
Q
0.049
0.14!
BSC
0.115
0.255
K
1257
'
0.51
3.61
2.5-
2B7
043
1473
0.78
3.86
BSC
2.92
069
14.99
1
M
216
2.41
3° YP
147
171
*
0
4.78
S
0.81
6.99
T
U
— S
|LL-
ST> It 2:
-
6,22
0.020
0.142
0.10
nn 5
O.OM
BSC
ll,11)i
0.0 7 11.112'
0.580
0.085
O.S9C
O.US5
3" 'YP
0.058
nnn
5.03
0.188 O.I3U
6.48
0.032 U.I1M
0.275 11.285
0.245 0.255
N DTE:
1 LEADS WITH IN .005" RAD OF TRUE
POSITION (TP)ATMMC
1 . DIM "G" IS TO CENTER LINE OF LEADS.
CASE 904>S
CASE 199-04
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