MBRH200150 thru MBRH200200R
Silicon Power
Schottky Diode
VRRM = 150 V - 200 V
IF(AV) = 200 A
Features
• High Surge Capability
• Types from 150 V to 200 V VRRM
D-67 Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
MBRH200150(R)
MBRH200200(R)
Unit
VRRM
150
200
V
VRMS
106
141
V
VDC
Tj
Tstg
150
-55 to 150
-55 to 150
150
-55 to 150
-55 to 150
V
°C
°C
Conditions
Symbol
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MBRH200150(R)
MBRH200200(R)
Unit
Average forward current (per
pkg)
IF(AV)
TC = 125 °C
200
200
A
Peak forward surge current
IFSM
tp = 8.3 ms, half sine
3000
3000
A
Maximum instantaneous
forward voltage
VF
IFM = 200 A, Tj = 25 °C
0.88
0.92
V
Maximum instantaneous
reverse current at rated DC
blocking voltage
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
50
1
10
50
mA
0.35
0.35
°C/W
Parameter
Thermal characteristics
Thermal resistance, junctioncase
RΘJC
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MBRH200150 thru MBRH200200R
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MBRH200150 thru MBRH200200R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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