PROCESS CP372 N-Channel MOSFET Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 37 x 63 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 6.9 x 6.8 MILS Source Bonding Pad Area 30 x 55 MILS Top Side Metalization Al - 40,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å GEOMETRY GROSS DIE PER 8 INCH WAFER 19,400 PRINCIPAL DEVICE TYPE CXDM6053N R0 (10-December 2012) w w w. c e n t r a l s e m i . c o m PROCESS CP372 Typical Electrical Characteristics R0 (10-December 2012) w w w. c e n t r a l s e m i . c o m